{"id":"https://openalex.org/W2516726318","doi":"https://doi.org/10.1109/iscas.2016.7527473","title":"Area-optimal sensing circuit designs in deep submicrometer STT-RAM","display_name":"Area-optimal sensing circuit designs in deep submicrometer STT-RAM","publication_year":2016,"publication_date":"2016-05-01","ids":{"openalex":"https://openalex.org/W2516726318","doi":"https://doi.org/10.1109/iscas.2016.7527473","mag":"2516726318"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2016.7527473","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527473","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103187291","display_name":"Sara Choi","orcid":"https://orcid.org/0000-0002-4179-7680"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sara Choi","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089907396","display_name":"Taehui Na","orcid":"https://orcid.org/0000-0001-8823-0625"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taehui Na","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064984422","display_name":"Jung Pill Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jung Pill Kim","raw_affiliation_strings":["Advanced Technology, Qualcomm Incorporated, San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology, Qualcomm Incorporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103061707","display_name":"Seung H. Kang","orcid":"https://orcid.org/0000-0003-4270-9918"},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Seung H. Kang","raw_affiliation_strings":["Advanced Technology, Qualcomm Incorporated, San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology, Qualcomm Incorporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4342,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.68792106,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1246","last_page":"1249"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.653226912021637},{"id":"https://openalex.org/keywords/yield","display_name":"Yield (engineering)","score":0.5867631435394287},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5810277462005615},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.560719907283783},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.5215099453926086},{"id":"https://openalex.org/keywords/transfer","display_name":"Transfer (computing)","score":0.4747118055820465},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.47390687465667725},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3763000965118408},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33045223355293274},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2721819281578064},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14780905842781067},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.12684166431427002},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.09459534287452698}],"concepts":[{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.653226912021637},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.5867631435394287},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5810277462005615},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.560719907283783},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.5215099453926086},{"id":"https://openalex.org/C2776175482","wikidata":"https://www.wikidata.org/wiki/Q1195816","display_name":"Transfer (computing)","level":2,"score":0.4747118055820465},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.47390687465667725},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3763000965118408},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33045223355293274},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2721819281578064},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14780905842781067},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.12684166431427002},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.09459534287452698},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2016.7527473","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527473","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8399999737739563}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1963552944","https://openalex.org/W1996356878","https://openalex.org/W2104500100","https://openalex.org/W2156728623","https://openalex.org/W2174116549","https://openalex.org/W2543205889","https://openalex.org/W2788575652","https://openalex.org/W6683132901"],"related_works":["https://openalex.org/W2347585086","https://openalex.org/W1527953837","https://openalex.org/W2042100038","https://openalex.org/W1966596465","https://openalex.org/W2764319374","https://openalex.org/W2075460687","https://openalex.org/W3032934611","https://openalex.org/W3086500945","https://openalex.org/W2781651239","https://openalex.org/W2368367884"],"abstract_inverted_index":{"As":[0,34],"the":[1,24,39,51,57,64,69,76,87,97,104,113],"technology":[2],"node":[3],"scales":[4],"down,":[5],"a":[6,15],"sufficient":[7],"read":[8,17,25,65,80,100,124],"current":[9],"that":[10],"is":[11,44],"capable":[12],"of":[13,23,75,90,99,115],"achieving":[14],"target":[16],"yield":[18,66,81,101],"cannot":[19],"be":[20,83],"used":[21],"because":[22,47,89],"disturbance":[26],"problem":[27],"in":[28],"spin-transfer-torque":[29],"random":[30],"access":[31],"memory":[32],"(STT-RAM).":[33],"an":[35],"alternative":[36],"method,":[37],"increasing":[38],"sensing":[40],"circuit":[41],"(SC)":[42],"area":[43,60,78,105],"generally":[45],"considered":[46],"it":[48],"can":[49,61,82],"reduce":[50,63],"threshold":[52],"voltage":[53],"(Vth)":[54],"variations.":[55],"However,":[56],"increased":[58,70,77],"SC":[59],"adversely":[62],"due":[67],"to":[68,86,103,121],"load":[71],"capacitance.":[72],"The":[73],"effects":[74],"on":[79],"different":[84],"according":[85,102],"SCs":[88,117],"their":[91],"own":[92],"characteristics.":[93],"In":[94],"this":[95],"work,":[96],"trends":[98],"are":[106,118],"analyzed":[107],"for":[108],"two":[109,116],"representative":[110],"SCs,":[111],"and":[112],"areas":[114],"optimally":[119],"designed":[120],"have":[122],"high":[123],"yield.":[125]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}