{"id":"https://openalex.org/W2518283779","doi":"https://doi.org/10.1109/iscas.2016.7527416","title":"Temperature-based adaptive memory sub-system in 28nm UTBB FDSOI","display_name":"Temperature-based adaptive memory sub-system in 28nm UTBB FDSOI","publication_year":2016,"publication_date":"2016-05-01","ids":{"openalex":"https://openalex.org/W2518283779","doi":"https://doi.org/10.1109/iscas.2016.7527416","mag":"2518283779"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2016.7527416","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527416","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019540812","display_name":"Amit Chhabra","orcid":"https://orcid.org/0000-0003-2056-6231"},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Amit Chhabra","raw_affiliation_strings":["S'I'Microelectronics, Greater Noida, India"],"affiliations":[{"raw_affiliation_string":"S'I'Microelectronics, Greater Noida, India","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027445519","display_name":"Mudit Srivastava","orcid":"https://orcid.org/0000-0002-0138-7601"},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Mudit Srivastava","raw_affiliation_strings":["S'I'Microelectronics, Greater Noida, India"],"affiliations":[{"raw_affiliation_string":"S'I'Microelectronics, Greater Noida, India","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060514919","display_name":"Prakhar Raj Gupta","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Prakhar Raj Gupta","raw_affiliation_strings":["S'I'Microelectronics, Greater Noida, India"],"affiliations":[{"raw_affiliation_string":"S'I'Microelectronics, Greater Noida, India","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020900413","display_name":"Kedar Janardan Dhori","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Kedar Janardan Dhori","raw_affiliation_strings":["S'I'Microelectronics, Greater Noida, India"],"affiliations":[{"raw_affiliation_string":"S'I'Microelectronics, Greater Noida, India","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034339394","display_name":"P. Triolet","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Philippe Triolet","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018384508","display_name":"Thierry Di Gilio","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Thierry Di Gilio","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103093862","display_name":"Nitin Bansal","orcid":"https://orcid.org/0000-0001-8344-187X"},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Nitin Bansal","raw_affiliation_strings":["S'I'Microelectronics, Greater Noida, India"],"affiliations":[{"raw_affiliation_string":"S'I'Microelectronics, Greater Noida, India","institution_ids":["https://openalex.org/I4210094169"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033661594","display_name":"B. Sujatha","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094169","display_name":"STMicroelectronics (India)","ror":"https://ror.org/00ft7bw25","country_code":"IN","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210094169"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"B. Sujatha","raw_affiliation_strings":["S'I'Microelectronics, Greater Noida, India"],"affiliations":[{"raw_affiliation_string":"S'I'Microelectronics, Greater Noida, India","institution_ids":["https://openalex.org/I4210094169"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5019540812"],"corresponding_institution_ids":["https://openalex.org/I4210094169"],"apc_list":null,"apc_paid":null,"fwci":0.1838,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.57837136,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1018","last_page":"1021"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9504510164260864},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.6406281590461731},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6119288206100464},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5779657959938049},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4618014693260193},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45411965250968933},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4422948956489563},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4202612638473511},{"id":"https://openalex.org/keywords/process-corners","display_name":"Process corners","score":0.4173014163970947},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.34485942125320435},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3290671706199646},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3004644811153412},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.28392350673675537},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18416008353233337},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.12623175978660583}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9504510164260864},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6406281590461731},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6119288206100464},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5779657959938049},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4618014693260193},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45411965250968933},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4422948956489563},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4202612638473511},{"id":"https://openalex.org/C192615534","wikidata":"https://www.wikidata.org/wiki/Q7247268","display_name":"Process corners","level":3,"score":0.4173014163970947},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.34485942125320435},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3290671706199646},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3004644811153412},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.28392350673675537},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18416008353233337},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.12623175978660583},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2016.7527416","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527416","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8700000047683716}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1514601727","https://openalex.org/W1979682633","https://openalex.org/W1983334556","https://openalex.org/W2007028265","https://openalex.org/W2009565739","https://openalex.org/W2021433466","https://openalex.org/W2024327457","https://openalex.org/W2024473763","https://openalex.org/W2088481695","https://openalex.org/W2094960953","https://openalex.org/W2112639231","https://openalex.org/W2116100358","https://openalex.org/W2154136338","https://openalex.org/W2158715350","https://openalex.org/W2294956199","https://openalex.org/W2470420360","https://openalex.org/W6644979739","https://openalex.org/W6656524422","https://openalex.org/W6677415780","https://openalex.org/W6683085269"],"related_works":["https://openalex.org/W2042526628","https://openalex.org/W2537086382","https://openalex.org/W4388937616","https://openalex.org/W2185483573","https://openalex.org/W2605939216","https://openalex.org/W2108986771","https://openalex.org/W2104956145","https://openalex.org/W2784027635","https://openalex.org/W2745140408","https://openalex.org/W1992421111"],"abstract_inverted_index":{"Temperature":[0],"plays":[1],"a":[2,59],"crucial":[3],"role":[4],"in":[5,177,191,229],"deciding":[6],"SRAM":[7,14,37,56,113,178,230],"performance":[8],"especially":[9],"at":[10,23,128,138,223],"very":[11],"low":[12],"voltage.":[13],"bitcell":[15,76,190],"has":[16],"conflicting":[17],"constraints":[18],"of":[19,69,74,95,212],"write-ability":[20,127],"and":[21,27,43,93,131,164,196,214],"stability":[22,44,137],"cold":[24,129,224],"(-40\u00b0C":[25],"typically)":[26,31],"hot":[28,139],"temperature":[29,110,151,163,210],"(125\u00b0C":[30],"respectively.":[32],"In":[33,86,141,216],"order":[34],"to":[35,65,84,111,119,123,125,133,135,219],"reduce":[36,112],"minimum":[38],"operating":[39],"voltage":[40,61,79,105],"(VMIN),":[41],"write":[42],"assist":[45,147],"schemes":[46],"are":[47,169],"deployed.":[48],"Fully-Depleted":[49],"SOI":[50],"(FDSOI)":[51],"technology":[52],"offers":[53],"single":[54,60,188],"P-well":[55,189],"bitcell,":[57],"where":[58],"can":[62,80],"be":[63],"used":[64],"adjust":[66],"the":[67,70,96,108,143,155],"state":[68],"body":[71,103,116,221],"(or":[72],"P-well)":[73],"all":[75],"devices.":[77],"This":[78],"vary":[81],"from":[82],"-1.1V":[83,134],"+1.1V.":[85],"this":[87],"paper,":[88],"we":[89,226],"present":[90,154],"detailed":[91],"architecture":[92],"implementation":[94],"low-power":[97],"adaptive":[98],"memory":[99,166],"sub-system":[100],"that":[101,168],"modulates":[102],"bias":[104,222],"based":[106,149,158],"on":[107,150],"junction":[109],"VMIN.":[114],"The":[115],"is":[117],"biased":[118],"positive":[120],"voltages":[121],"up":[122,132],"+1.1V":[124],"boost":[126,136],"temperatures":[130],"temperatures.":[140],"addition,":[142,217],"system":[144],"selects":[145],"appropriate":[146],"scheme":[148],"information.":[152],"We":[153,174,202],"dynamic":[156,206],"simulation":[157],"functional":[159],"verification":[160],"environment":[161],"using":[162,184],"voltage-aware":[165],"models":[167],"compliant":[170],"with":[171],"IEEE":[172],"1801.":[173],"gained":[175,204,227],"50mV":[176],"VMIN":[179],"thereby":[180],"allowing":[181],"0.55V":[182],"operation":[183],"high":[185],"density":[186],"0.120\u03bcm2":[187],"28nm":[192],"planar":[193],"Ultra-Thin":[194],"Box":[195],"Body":[197],"(UTBB)":[198],"FDSOI":[199],"CMOS":[200],"technology.":[201],"also":[203],"18%":[205],"power":[207],"during":[208],"regular":[209],"range":[211],"10\u00b0C":[213],"75\u00b0C.":[215],"due":[218],"forward":[220],"temperature,":[225],"30%":[228],"access":[231],"time.":[232]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}