{"id":"https://openalex.org/W2517777814","doi":"https://doi.org/10.1109/iscas.2016.7527257","title":"Flexible 2D nanoelectronics from baseband to sub-THz transistors and circuits","display_name":"Flexible 2D nanoelectronics from baseband to sub-THz transistors and circuits","publication_year":2016,"publication_date":"2016-05-01","ids":{"openalex":"https://openalex.org/W2517777814","doi":"https://doi.org/10.1109/iscas.2016.7527257","mag":"2517777814"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2016.7527257","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527257","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5017389511","display_name":"Weinan Zhu","orcid":"https://orcid.org/0000-0002-0256-3750"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Weinan Zhu","raw_affiliation_strings":["Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056620352","display_name":"Saungeun Park","orcid":null},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Saungeun Park","raw_affiliation_strings":["Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102059495","display_name":"Hsiao\u2010Yu Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hsiao-Yu Chang","raw_affiliation_strings":["Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080452063","display_name":"Maruthi Nagavalli Yogeesh","orcid":"https://orcid.org/0000-0002-3109-5992"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Maruthi N. Yogeesh","raw_affiliation_strings":["Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063313700","display_name":"Deji Akinwande","orcid":"https://orcid.org/0000-0001-7133-5586"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Deji Akinwande","raw_affiliation_strings":["Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, The University of Texas \u2014 Austin, Austin, USA","institution_ids":["https://openalex.org/I86519309"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I86519309"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.14542575,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"34","issue":null,"first_page":"409","last_page":"412"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"Nanoelectronics","score":0.8150027990341187},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7159374356269836},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6288875937461853},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5731906294822693},{"id":"https://openalex.org/keywords/baseband","display_name":"Baseband","score":0.5721226334571838},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"Cutoff frequency","score":0.5548466444015503},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5394147038459778},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.5300595164299011},{"id":"https://openalex.org/keywords/graphene","display_name":"Graphene","score":0.47184255719184875},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42799291014671326},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.4263407289981842},{"id":"https://openalex.org/keywords/terahertz-radiation","display_name":"Terahertz radiation","score":0.42011743783950806},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4036315977573395},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2475549876689911},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21350273489952087},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1862226128578186},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.12421497702598572}],"concepts":[{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.8150027990341187},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7159374356269836},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6288875937461853},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5731906294822693},{"id":"https://openalex.org/C65165936","wikidata":"https://www.wikidata.org/wiki/Q575784","display_name":"Baseband","level":3,"score":0.5721226334571838},{"id":"https://openalex.org/C6142545","wikidata":"https://www.wikidata.org/wiki/Q1455881","display_name":"Cutoff frequency","level":2,"score":0.5548466444015503},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5394147038459778},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.5300595164299011},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.47184255719184875},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42799291014671326},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.4263407289981842},{"id":"https://openalex.org/C107816215","wikidata":"https://www.wikidata.org/wiki/Q647887","display_name":"Terahertz radiation","level":2,"score":0.42011743783950806},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4036315977573395},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2475549876689911},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21350273489952087},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1862226128578186},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.12421497702598572},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2016.7527257","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527257","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8399999737739563,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1640848811","https://openalex.org/W1981781535","https://openalex.org/W1983889577","https://openalex.org/W1992837891","https://openalex.org/W2010561486","https://openalex.org/W2023476943","https://openalex.org/W2041311241","https://openalex.org/W2065818167","https://openalex.org/W2088034301","https://openalex.org/W2095890245","https://openalex.org/W2097773259","https://openalex.org/W2146784401","https://openalex.org/W2149307116","https://openalex.org/W2150315430","https://openalex.org/W2155987656","https://openalex.org/W2160609940","https://openalex.org/W2261852134","https://openalex.org/W2313963552","https://openalex.org/W2326584007"],"related_works":["https://openalex.org/W2385877031","https://openalex.org/W2381853949","https://openalex.org/W2033952283","https://openalex.org/W2762687161","https://openalex.org/W2353254830","https://openalex.org/W2351210568","https://openalex.org/W2028421553","https://openalex.org/W2890072373","https://openalex.org/W2204547643","https://openalex.org/W4253176004"],"abstract_inverted_index":{"In":[0,95],"this":[1],"work,":[2],"we":[3],"provide":[4],"an":[5],"overview":[6],"of":[7,39],"the":[8,37,78],"state-of-the-art":[9],"flexible":[10,63,72,100],"two":[11],"dimensional":[12],"radio":[13],"frequency":[14,57,116],"transistors":[15,50,101],"based":[16,51,71,99],"on":[17,52],"graphene,":[18],"MoS2":[19,70],"and":[20,44,102,114],"black":[21,97],"phosphorus":[22,98],"for":[23,77],"nanoelectronics":[24],"applications":[25,117],"from":[26],"baseband":[27],"to":[28],"sub":[29],"THz,":[30],"with":[31,54,81,107],"outstanding":[32,108],"electrical":[33,109],"performance":[34,110],"obtained":[35],"fulfilling":[36],"requirements":[38],"both":[40,112],"high":[41,115],"speed":[42],"operation":[43],"low":[45,90],"power":[46,91],"consumptions.":[47],"Flexible":[48],"RF":[49,73,92],"graphene":[53],"intrinsic":[55,83],"cutoff":[56],"(fT)":[58],"reaching":[59],"100GHz":[60],"enable":[61],"sub-THz":[62],"nano":[64,93],"systems.":[65,94],"Large":[66],"scale":[67],"CVD":[68],"grown":[69],"transistor":[74],"was":[75],"realized":[76,106],"first":[79],"time":[80],"record":[82],"fT":[84],"~":[85],"5.6GHz":[86],"which":[87],"can":[88],"afford":[89],"addition,":[96],"circuits":[103],"have":[104],"been":[105],"in":[111],"DC":[113],"while":[118],"retaining":[119],"mechanical":[120],"robustness.":[121]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}