{"id":"https://openalex.org/W2508692488","doi":"https://doi.org/10.1109/iscas.2016.7527256","title":"Digital, analog and RF design opportunities of three-independent-gate transistors","display_name":"Digital, analog and RF design opportunities of three-independent-gate transistors","publication_year":2016,"publication_date":"2016-05-01","ids":{"openalex":"https://openalex.org/W2508692488","doi":"https://doi.org/10.1109/iscas.2016.7527256","mag":"2508692488"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2016.7527256","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527256","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002568331","display_name":"Pierre\u2010Emmanuel Gaillardon","orcid":"https://orcid.org/0000-0003-3634-3999"},"institutions":[{"id":"https://openalex.org/I223532165","display_name":"University of Utah","ror":"https://ror.org/03r0ha626","country_code":"US","type":"education","lineage":["https://openalex.org/I223532165"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Pierre-Emmanuel Gaillardon","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA","institution_ids":["https://openalex.org/I223532165"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102229642","display_name":"Mehdi Hasan","orcid":null},"institutions":[{"id":"https://openalex.org/I223532165","display_name":"University of Utah","ror":"https://ror.org/03r0ha626","country_code":"US","type":"education","lineage":["https://openalex.org/I223532165"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mehdi Hasan","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA","institution_ids":["https://openalex.org/I223532165"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008561576","display_name":"Anirban Saha","orcid":"https://orcid.org/0000-0001-8552-1232"},"institutions":[{"id":"https://openalex.org/I223532165","display_name":"University of Utah","ror":"https://ror.org/03r0ha626","country_code":"US","type":"education","lineage":["https://openalex.org/I223532165"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Anirban Saha","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA","institution_ids":["https://openalex.org/I223532165"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023405941","display_name":"Luca Amar\u00f9","orcid":null},"institutions":[{"id":"https://openalex.org/I4210088951","display_name":"Synopsys (United States)","ror":"https://ror.org/013by2m91","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088951"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Luca Amaru","raw_affiliation_strings":["Synopsys Inc., Mountain View, CA, USA"],"affiliations":[{"raw_affiliation_string":"Synopsys Inc., Mountain View, CA, USA","institution_ids":["https://openalex.org/I4210088951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079481490","display_name":"Ross Walker","orcid":"https://orcid.org/0000-0002-4158-0158"},"institutions":[{"id":"https://openalex.org/I223532165","display_name":"University of Utah","ror":"https://ror.org/03r0ha626","country_code":"US","type":"education","lineage":["https://openalex.org/I223532165"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ross Walker","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA","institution_ids":["https://openalex.org/I223532165"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108743319","display_name":"Berardi Sensale Rodriguez","orcid":null},"institutions":[{"id":"https://openalex.org/I223532165","display_name":"University of Utah","ror":"https://ror.org/03r0ha626","country_code":"US","type":"education","lineage":["https://openalex.org/I223532165"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Berardi Sensale Rodriguez","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Utah, SLC, UT, USA","institution_ids":["https://openalex.org/I223532165"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5002568331"],"corresponding_institution_ids":["https://openalex.org/I223532165"],"apc_list":null,"apc_paid":null,"fwci":0.3675,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.65469198,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"405","last_page":"408"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6623843312263489},{"id":"https://openalex.org/keywords/subthreshold-slope","display_name":"Subthreshold slope","score":0.6295253038406372},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5079358220100403},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.49913740158081055},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4966815114021301},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.49249181151390076},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4512268602848053},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4387330710887909},{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.42379286885261536},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42364779114723206},{"id":"https://openalex.org/keywords/modulation","display_name":"Modulation (music)","score":0.41944172978401184},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.4182042181491852},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3746805489063263},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3192697763442993},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.17255237698554993},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1608128547668457}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6623843312263489},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.6295253038406372},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5079358220100403},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.49913740158081055},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4966815114021301},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.49249181151390076},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4512268602848053},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4387330710887909},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.42379286885261536},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42364779114723206},{"id":"https://openalex.org/C123079801","wikidata":"https://www.wikidata.org/wiki/Q750240","display_name":"Modulation (music)","level":2,"score":0.41944172978401184},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4182042181491852},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3746805489063263},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3192697763442993},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17255237698554993},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1608128547668457},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2016.7527256","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2016.7527256","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W658393943","https://openalex.org/W1934937100","https://openalex.org/W1964731177","https://openalex.org/W1966797259","https://openalex.org/W1970715657","https://openalex.org/W1984620591","https://openalex.org/W2000992449","https://openalex.org/W2021433466","https://openalex.org/W2034378509","https://openalex.org/W2038256938","https://openalex.org/W2044930572","https://openalex.org/W2055215434","https://openalex.org/W2067557307","https://openalex.org/W2081581042","https://openalex.org/W2085113954","https://openalex.org/W2093950219","https://openalex.org/W2096307231","https://openalex.org/W2104559194","https://openalex.org/W2111832576","https://openalex.org/W2166127884","https://openalex.org/W2167034725","https://openalex.org/W2322754293","https://openalex.org/W2475898412","https://openalex.org/W4253084021","https://openalex.org/W6642961203"],"related_works":["https://openalex.org/W1186362247","https://openalex.org/W1995720339","https://openalex.org/W2545890115","https://openalex.org/W2483800719","https://openalex.org/W2905928227","https://openalex.org/W4235745934","https://openalex.org/W2062469423","https://openalex.org/W2095078040","https://openalex.org/W2040326261","https://openalex.org/W1776035293"],"abstract_inverted_index":{"Field-Effect":[0],"Transistors":[1],"(FETs)":[2],"with":[3],"Three":[4],"Independent":[5],"Gates":[6],"(TIG)":[7],"can":[8],"achieve":[9],"different":[10],"modes":[11],"of":[12,18,30,83],"operation":[13],"according":[14],"to":[15,45],"the":[16,19,71],"bias":[17],"gate":[20],"terminals.":[21],"In":[22,65],"particular,":[23],"TIG":[24],"FETs":[25],"were":[26],"recently":[27],"shown":[28],"capable":[29],"(i)":[31],"device-level":[32],"polarity":[33],"control,":[34],"(ii)":[35],"dynamic":[36],"threshold":[37],"modulation":[38],"and":[39,54,74],"(iii)":[40],"subthreshold":[41],"slope":[42],"tuning":[43],"down":[44],"ultra-steep-slope":[46],"operation.":[47],"Experimentally":[48],"demonstrated":[49],"using":[50],"both":[51],"contemporary":[52],"FinFETs":[53],"emerging":[55],"silicon":[56],"nanowires":[57],"channel":[58],"technologies,":[59],"TIGFETs":[60],"unlock":[61],"several":[62],"design":[63,76],"opportunities.":[64],"this":[66,80],"paper,":[67],"we":[68],"comment":[69],"on":[70],"digital,":[72],"analog":[73],"RF":[75],"capabilities":[77],"offered":[78],"by":[79],"new":[81],"class":[82],"transistors.":[84]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}