{"id":"https://openalex.org/W1975907171","doi":"https://doi.org/10.1109/iscas.2014.6865600","title":"4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes","display_name":"4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W1975907171","doi":"https://doi.org/10.1109/iscas.2014.6865600","mag":"1975907171"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2014.6865600","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2014.6865600","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://infoscience.epfl.ch/record/203115","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5034618529","display_name":"Robert Giterman","orcid":"https://orcid.org/0000-0002-1410-4746"},"institutions":[{"id":"https://openalex.org/I124227911","display_name":"Ben-Gurion University of the Negev","ror":"https://ror.org/05tkyf982","country_code":"IL","type":"education","lineage":["https://openalex.org/I124227911"]}],"countries":["IL"],"is_corresponding":true,"raw_author_name":"Robert Giterman","raw_affiliation_strings":["VLSI Systems Center, Ben-Gurion University of the Negev, Be'er Sheva","VLSI Syst. Center, Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel"],"affiliations":[{"raw_affiliation_string":"VLSI Systems Center, Ben-Gurion University of the Negev, Be'er Sheva","institution_ids":["https://openalex.org/I124227911"]},{"raw_affiliation_string":"VLSI Syst. Center, Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel","institution_ids":["https://openalex.org/I124227911"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026444183","display_name":"Adam Teman","orcid":"https://orcid.org/0000-0002-8233-4711"},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Adam Teman","raw_affiliation_strings":["Ecole Polytechnique Federale de Lausanne, Lausanne, VD, CH","Inst. of Electr. Eng., EPFL, Lausanne, Switzerland"],"affiliations":[{"raw_affiliation_string":"Ecole Polytechnique Federale de Lausanne, Lausanne, VD, CH","institution_ids":["https://openalex.org/I5124864"]},{"raw_affiliation_string":"Inst. of Electr. Eng., EPFL, Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026324911","display_name":"Pascal Meinerzhagen","orcid":"https://orcid.org/0000-0002-5444-5772"},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Pascal Meinerzhagen","raw_affiliation_strings":["Institute of Electrical Engineering, EPFL, Lausanne, VD, Switzerland","Inst. of Electr. Eng., EPFL, Lausanne, Switzerland"],"affiliations":[{"raw_affiliation_string":"Institute of Electrical Engineering, EPFL, Lausanne, VD, Switzerland","institution_ids":["https://openalex.org/I5124864"]},{"raw_affiliation_string":"Inst. of Electr. Eng., EPFL, Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059133771","display_name":"Andreas Burg","orcid":"https://orcid.org/0000-0002-7270-5558"},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Andreas Burg","raw_affiliation_strings":["Institute of Electrical Engineering, EPFL, Lausanne, VD, Switzerland","Inst. of Electr. Eng., EPFL, Lausanne, Switzerland"],"affiliations":[{"raw_affiliation_string":"Institute of Electrical Engineering, EPFL, Lausanne, VD, Switzerland","institution_ids":["https://openalex.org/I5124864"]},{"raw_affiliation_string":"Inst. of Electr. Eng., EPFL, Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065902823","display_name":"Alexander Fish","orcid":"https://orcid.org/0000-0002-4994-1536"},"institutions":[{"id":"https://openalex.org/I13955877","display_name":"Bar-Ilan University","ror":"https://ror.org/03kgsv495","country_code":"IL","type":"education","lineage":["https://openalex.org/I13955877"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Alexander Fish","raw_affiliation_strings":["Faculty of Engineering, Bar-Ilan University, Ramat Gan","Fac. of Eng., Bar Ilan Univ., Ramat Gan, Israel"],"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Bar-Ilan University, Ramat Gan","institution_ids":["https://openalex.org/I13955877"]},{"raw_affiliation_string":"Fac. of Eng., Bar Ilan Univ., Ramat Gan, Israel","institution_ids":["https://openalex.org/I13955877"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5034618529"],"corresponding_institution_ids":["https://openalex.org/I124227911"],"apc_list":null,"apc_paid":null,"fwci":2.0933,"has_fulltext":false,"cited_by_count":27,"citation_normalized_percentile":{"value":0.8811683,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"2177","last_page":"2180"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.8680531978607178},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.805675208568573},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.719814658164978},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7072123885154724},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.5846542716026306},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5036608576774597},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4555555284023285},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.447752445936203},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.4401244819164276},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.4367578625679016},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42987924814224243},{"id":"https://openalex.org/keywords/retention-time","display_name":"Retention time","score":0.4230741262435913},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.39632758498191833},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.36921602487564087},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.36083537340164185},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3356916904449463},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.33403870463371277},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.2658884823322296},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22136926651000977},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.06676292419433594}],"concepts":[{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.8680531978607178},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.805675208568573},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.719814658164978},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7072123885154724},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5846542716026306},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5036608576774597},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4555555284023285},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.447752445936203},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.4401244819164276},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4367578625679016},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42987924814224243},{"id":"https://openalex.org/C3020018676","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Retention time","level":2,"score":0.4230741262435913},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.39632758498191833},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.36921602487564087},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.36083537340164185},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3356916904449463},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.33403870463371277},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.2658884823322296},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22136926651000977},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06676292419433594},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/iscas.2014.6865600","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2014.6865600","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},{"id":"pmh:oai:infoscience.epfl.ch:203115","is_oa":true,"landing_page_url":"http://infoscience.epfl.ch/record/203115","pdf_url":null,"source":{"id":"https://openalex.org/S4306400487","display_name":"Infoscience (Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Text"}],"best_oa_location":{"id":"pmh:oai:infoscience.epfl.ch:203115","is_oa":true,"landing_page_url":"http://infoscience.epfl.ch/record/203115","pdf_url":null,"source":{"id":"https://openalex.org/S4306400487","display_name":"Infoscience (Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Text"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8399999737739563,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1940446526","https://openalex.org/W1971936677","https://openalex.org/W2002293402","https://openalex.org/W2070905822","https://openalex.org/W2084514439","https://openalex.org/W2097346754","https://openalex.org/W2116567461","https://openalex.org/W2132357267","https://openalex.org/W3148792909","https://openalex.org/W6640883792"],"related_works":["https://openalex.org/W2074922484","https://openalex.org/W1530056031","https://openalex.org/W3004383742","https://openalex.org/W2063061014","https://openalex.org/W4382618663","https://openalex.org/W2105633922","https://openalex.org/W2007079691","https://openalex.org/W1983178358","https://openalex.org/W838776354","https://openalex.org/W3161593307"],"abstract_inverted_index":{"Gain-Cell":[0],"embedded":[1],"DRAM":[2],"(GC-eDRAM)":[3],"has":[4],"recently":[5],"been":[6],"recognized":[7],"as":[8,136],"a":[9,62,92,117,130,139],"possible":[10],"alternative":[11],"to":[12,73,138],"traditional":[13],"SRAM.":[14,142],"While":[15],"GC-eDRAM":[16,65],"inherently":[17],"provides":[18],"high-density,":[19],"low-leakage,":[20],"low-voltage,":[21],"and":[22,47],"2-ported":[23],"operation,":[24],"its":[25],"limited":[26],"retention":[27,78,103,122],"time":[28,79,104],"requires":[29],"periodic,":[30],"power-hungry":[31],"refresh":[32,126],"cycles.":[33],"This":[34],"drawback":[35],"is":[36],"further":[37],"enhanced":[38],"at":[39,110],"scaled":[40,81],"technologies,":[41],"where":[42],"increased":[43],"subthreshold":[44],"leakage":[45],"currents":[46],"decreased":[48],"in-cell":[49],"storage":[50],"capacitances":[51],"result":[52],"in":[53,80,91,102,121,133],"faster":[54],"data":[55,77],"deterioration.":[56],"In":[57],"this":[58,111],"paper,":[59],"we":[60],"present":[61],"novel":[63],"4T":[64],"bitcell":[66,134],"that":[67],"utilizes":[68],"an":[69,98],"internal":[70],"feedback":[71],"mechanism":[72],"significantly":[74],"increase":[75],"the":[76,106,125],"CMOS":[82,95],"technologies.":[83],"A":[84],"2":[85],"kb":[86],"memory":[87],"macro":[88],"was":[89],"implemented":[90],"low-power":[93],"65nm":[94],"technology,":[96],"displaying":[97],"over":[99,105],"3\u00d7":[100],"improvement":[101],"best":[107],"previous":[108],"publication":[109],"node.":[112],"The":[113],"resulting":[114],"array":[115],"displays":[116],"nearly":[118],"5\u00d7":[119],"reduction":[120,132],"power":[123,127],"(despite":[124],"component)":[128],"with":[129],"40%":[131],"area,":[135],"compared":[137],"standard":[140],"6T":[141]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":5},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}