{"id":"https://openalex.org/W2068996536","doi":"https://doi.org/10.1109/iscas.2014.6865287","title":"A low temperature coefficient voltage reference utilizing BiCMOS compensation technique","display_name":"A low temperature coefficient voltage reference utilizing BiCMOS compensation technique","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W2068996536","doi":"https://doi.org/10.1109/iscas.2014.6865287","mag":"2068996536"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2014.6865287","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2014.6865287","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101782530","display_name":"Yi Huang","orcid":"https://orcid.org/0000-0002-6949-5617"},"institutions":[{"id":"https://openalex.org/I102322142","display_name":"Rutgers, The State University of New Jersey","ror":"https://ror.org/05vt9qd57","country_code":"US","type":"education","lineage":["https://openalex.org/I102322142"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Yi Huang","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ","[Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA]"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ","institution_ids":["https://openalex.org/I102322142"]},{"raw_affiliation_string":"[Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA]","institution_ids":["https://openalex.org/I102322142"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100635251","display_name":"Li Zhu","orcid":"https://orcid.org/0000-0003-0767-7471"},"institutions":[{"id":"https://openalex.org/I102322142","display_name":"Rutgers, The State University of New Jersey","ror":"https://ror.org/05vt9qd57","country_code":"US","type":"education","lineage":["https://openalex.org/I102322142"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Li Zhu","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ","[Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA]"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ","institution_ids":["https://openalex.org/I102322142"]},{"raw_affiliation_string":"[Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA]","institution_ids":["https://openalex.org/I102322142"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110274842","display_name":"Chun Cheung","orcid":null},"institutions":[{"id":"https://openalex.org/I106903285","display_name":"Intersil (United States)","ror":"https://ror.org/05ttt5a28","country_code":"US","type":"company","lineage":["https://openalex.org/I106903285","https://openalex.org/I4210153176"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chun Cheung","raw_affiliation_strings":["Intersil Corporation, Bridgewater, NJ","[Intersil Corporation, Bridgewater, NJ, USA]"],"affiliations":[{"raw_affiliation_string":"Intersil Corporation, Bridgewater, NJ","institution_ids":["https://openalex.org/I106903285"]},{"raw_affiliation_string":"[Intersil Corporation, Bridgewater, NJ, USA]","institution_ids":["https://openalex.org/I106903285"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029389730","display_name":"Laleh Najafizadeh","orcid":"https://orcid.org/0000-0002-6658-4112"},"institutions":[{"id":"https://openalex.org/I102322142","display_name":"Rutgers, The State University of New Jersey","ror":"https://ror.org/05vt9qd57","country_code":"US","type":"education","lineage":["https://openalex.org/I102322142"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Laleh Najafizadeh","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ","[Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA]"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ","institution_ids":["https://openalex.org/I102322142"]},{"raw_affiliation_string":"[Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA]","institution_ids":["https://openalex.org/I102322142"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5101782530"],"corresponding_institution_ids":["https://openalex.org/I102322142"],"apc_list":null,"apc_paid":null,"fwci":0.5605,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.6849826,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"1","issue":null,"first_page":"922","last_page":"925"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.8121747970581055},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.7697126865386963},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.6459506750106812},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.6343721151351929},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6198475360870361},{"id":"https://openalex.org/keywords/atmospheric-temperature-range","display_name":"Atmospheric temperature range","score":0.6045013070106506},{"id":"https://openalex.org/keywords/compensation","display_name":"Compensation (psychology)","score":0.5879846811294556},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5394817590713501},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5309773087501526},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.5171522498130798},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5163677930831909},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.4535752534866333},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.453469842672348},{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.4513520300388336},{"id":"https://openalex.org/keywords/silicon-germanium","display_name":"Silicon-germanium","score":0.440855473279953},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4245303273200989},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3396286964416504},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.29369068145751953},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21009132266044617},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1844978928565979}],"concepts":[{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.8121747970581055},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.7697126865386963},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.6459506750106812},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.6343721151351929},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6198475360870361},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.6045013070106506},{"id":"https://openalex.org/C2780023022","wikidata":"https://www.wikidata.org/wiki/Q1338171","display_name":"Compensation (psychology)","level":2,"score":0.5879846811294556},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5394817590713501},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5309773087501526},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.5171522498130798},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5163677930831909},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.4535752534866333},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.453469842672348},{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.4513520300388336},{"id":"https://openalex.org/C2780389399","wikidata":"https://www.wikidata.org/wiki/Q367849","display_name":"Silicon-germanium","level":3,"score":0.440855473279953},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4245303273200989},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3396286964416504},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.29369068145751953},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21009132266044617},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1844978928565979},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.0},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0},{"id":"https://openalex.org/C11171543","wikidata":"https://www.wikidata.org/wiki/Q41630","display_name":"Psychoanalysis","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2014.6865287","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2014.6865287","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8700000047683716,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W617071296","https://openalex.org/W1504370941","https://openalex.org/W1543986194","https://openalex.org/W1568879359","https://openalex.org/W1976272148","https://openalex.org/W2075485901","https://openalex.org/W2079826846","https://openalex.org/W2092954710","https://openalex.org/W2100463091","https://openalex.org/W2107605478","https://openalex.org/W2109206407","https://openalex.org/W2139801901","https://openalex.org/W2145458182","https://openalex.org/W2145706786","https://openalex.org/W2164546195","https://openalex.org/W2171702041","https://openalex.org/W6634016293","https://openalex.org/W6669267091"],"related_works":["https://openalex.org/W2370820504","https://openalex.org/W2133199116","https://openalex.org/W4389955510","https://openalex.org/W2347289947","https://openalex.org/W2159904735","https://openalex.org/W2364640622","https://openalex.org/W2390376289","https://openalex.org/W1551857057","https://openalex.org/W2907906161","https://openalex.org/W2372270451"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,46,70,73,86,102],"low":[4],"temperature":[5,26,77,103,110],"coefficient":[6,104],"BiCMOS":[7,20],"voltage":[8,97],"reference":[9],"circuit":[10,93],"designed":[11],"in":[12,62],"IBM's":[13],"8HP":[14],"Silicon-Germanium":[15],"(SiGe)":[16],"technology":[17],"platform.":[18],"A":[19],"compensation":[21,78],"approach":[22],"by":[23,45,59,68],"combining":[24],"the":[25,36,50,63,92,109],"properties":[27],"of":[28,76,89,98,105,112],"HBTs":[29],"and":[30],"CMOS":[31],"transistors":[32],"has":[33],"been":[34],"employed:":[35],"Complementary":[37],"to":[38,52,114],"Absolute":[39,53],"Temperature":[40,54],"(CTAT)":[41],"current":[42,56],"is":[43,57,79],"generated":[44,58],"SiGe":[47],"HBT,":[48],"while":[49],"Proportional":[51],"(PTAT)":[55],"MOSFETs":[60],"operating":[61],"subthreshold":[64],"region.":[65],"In":[66],"addition,":[67],"adding":[69],"nonlinear":[71],"component,":[72],"higher":[74],"level":[75],"achieved.":[80],"Simulation":[81],"results":[82],"show":[83],"that":[84],"with":[85,101],"power":[87],"supply":[88],"1.2":[90],"V,":[91],"generates":[94],"an":[95],"output":[96],"0.981":[99],"V":[100],"0.6":[106],"ppm/\u00b0C":[107],"over":[108],"range":[111],"-25\u00b0C":[113],"125\u00b0C.":[115]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}