{"id":"https://openalex.org/W2036678186","doi":"https://doi.org/10.1109/iscas.2014.6865158","title":"The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices","display_name":"The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W2036678186","doi":"https://doi.org/10.1109/iscas.2014.6865158","mag":"2036678186"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2014.6865158","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2014.6865158","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5046588477","display_name":"Katrina Morgan","orcid":"https://orcid.org/0000-0002-8600-4322"},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Katrina A. Morgan","raw_affiliation_strings":["Nano Research Group, University of Southampton, Southampton, UK","Nano Res. Group, Univ. of Southampton, Southampton, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nano Research Group, University of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]},{"raw_affiliation_string":"Nano Res. Group, Univ. of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022265021","display_name":"Ruomeng Huang","orcid":"https://orcid.org/0000-0003-1185-635X"},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Ruomeng Huang","raw_affiliation_strings":["Nano Research Group, University of Southampton, Southampton, UK","Nano Res. Group, Univ. of Southampton, Southampton, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nano Research Group, University of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]},{"raw_affiliation_string":"Nano Res. Group, Univ. of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079864932","display_name":"S. J. Pearce","orcid":null},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Stuart Pearce","raw_affiliation_strings":["Nano Research Group, University of Southampton, Southampton, UK","Nano Res. Group, Univ. of Southampton, Southampton, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nano Research Group, University of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]},{"raw_affiliation_string":"Nano Res. Group, Univ. of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013088434","display_name":"C.H. de Groot","orcid":"https://orcid.org/0000-0002-3850-7101"},"institutions":[{"id":"https://openalex.org/I43439940","display_name":"University of Southampton","ror":"https://ror.org/01ryk1543","country_code":"GB","type":"education","lineage":["https://openalex.org/I43439940"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"C. H. De Groot","raw_affiliation_strings":["Nano Research Group, University of Southampton, Southampton, UK","Nano Res. Group, Univ. of Southampton, Southampton, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nano Research Group, University of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]},{"raw_affiliation_string":"Nano Res. Group, Univ. of Southampton, Southampton, UK","institution_ids":["https://openalex.org/I43439940"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I43439940"],"apc_list":null,"apc_paid":null,"fwci":0.4143,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.67287635,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"432","last_page":"435"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"Atomic layer deposition","score":0.8157267570495605},{"id":"https://openalex.org/keywords/hafnium","display_name":"Hafnium","score":0.7978061437606812},{"id":"https://openalex.org/keywords/tin","display_name":"Tin","score":0.7828418016433716},{"id":"https://openalex.org/keywords/monoclinic-crystal-system","display_name":"Monoclinic crystal system","score":0.754001259803772},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7501000165939331},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.7221130728721619},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.5988011956214905},{"id":"https://openalex.org/keywords/oxygen","display_name":"Oxygen","score":0.5765028595924377},{"id":"https://openalex.org/keywords/stoichiometry","display_name":"Stoichiometry","score":0.5565434098243713},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5343140363693237},{"id":"https://openalex.org/keywords/tin-oxide","display_name":"Tin oxide","score":0.47847363352775574},{"id":"https://openalex.org/keywords/deposition","display_name":"Deposition (geology)","score":0.47102388739585876},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.44319581985473633},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3354252576828003},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2696921229362488},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.18875235319137573},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.18259453773498535},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.15284952521324158},{"id":"https://openalex.org/keywords/crystal-structure","display_name":"Crystal structure","score":0.13162186741828918},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.10430511832237244},{"id":"https://openalex.org/keywords/zirconium","display_name":"Zirconium","score":0.0901227593421936}],"concepts":[{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.8157267570495605},{"id":"https://openalex.org/C546638069","wikidata":"https://www.wikidata.org/wiki/Q1119","display_name":"Hafnium","level":3,"score":0.7978061437606812},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.7828418016433716},{"id":"https://openalex.org/C61276311","wikidata":"https://www.wikidata.org/wiki/Q624543","display_name":"Monoclinic crystal system","level":3,"score":0.754001259803772},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7501000165939331},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7221130728721619},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5988011956214905},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.5765028595924377},{"id":"https://openalex.org/C144082473","wikidata":"https://www.wikidata.org/wiki/Q213185","display_name":"Stoichiometry","level":2,"score":0.5565434098243713},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5343140363693237},{"id":"https://openalex.org/C2780924660","wikidata":"https://www.wikidata.org/wiki/Q205123","display_name":"Tin oxide","level":3,"score":0.47847363352775574},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.47102388739585876},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.44319581985473633},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3354252576828003},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2696921229362488},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.18875235319137573},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.18259453773498535},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15284952521324158},{"id":"https://openalex.org/C115624301","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Crystal structure","level":2,"score":0.13162186741828918},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.10430511832237244},{"id":"https://openalex.org/C534791751","wikidata":"https://www.wikidata.org/wiki/Q1038","display_name":"Zirconium","level":2,"score":0.0901227593421936},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/iscas.2014.6865158","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2014.6865158","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},{"id":"pmh:oai:eprints.soton.ac.uk:396490","is_oa":false,"landing_page_url":"http://doi.org/10.1109/ISCAS.2014.6865158>).","pdf_url":null,"source":{"id":"https://openalex.org/S4306401019","display_name":"ePrints Soton (University of Southampton)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I43439940","host_organization_name":"University of Southampton","host_organization_lineage":["https://openalex.org/I43439940"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":null,"raw_type":"Conference or Workshop Item"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1508018340","https://openalex.org/W1986767809","https://openalex.org/W1987847141","https://openalex.org/W2003640076","https://openalex.org/W2027433163","https://openalex.org/W2032507522","https://openalex.org/W2051736202","https://openalex.org/W2082636786","https://openalex.org/W2084458534","https://openalex.org/W2093141452","https://openalex.org/W2115541803","https://openalex.org/W2118921812","https://openalex.org/W2127956777","https://openalex.org/W2142847629"],"related_works":["https://openalex.org/W1791348549","https://openalex.org/W4234942579","https://openalex.org/W4236657633","https://openalex.org/W4245256776","https://openalex.org/W4232958457","https://openalex.org/W2545245183","https://openalex.org/W156653976","https://openalex.org/W2054635671","https://openalex.org/W2320118746","https://openalex.org/W2086299624"],"abstract_inverted_index":{"TiN/HfOx/TiN":[0],"resistive":[1],"RAM":[2],"(RRAM)":[3],"devices":[4],"have":[5],"been":[6,14],"fabricated":[7],"where":[8],"the":[9,28,31,48,51,77,88,140,150,159,175,185],"hafnium":[10,32,55,152],"oxide":[11,33,190],"layer":[12,22],"has":[13,113,127],"deposited":[15],"at":[16,62,105,155],"three":[17],"different":[18],"temperatures":[19,97],"via":[20],"atomic":[21],"deposition":[23],"(ALD).":[24],"Material":[25],"characterization":[26],"shows":[27,46,82,134],"structure":[29,91],"of":[30,54,117,131,142,162],"is":[34,154],"converted":[35],"from":[36],"cubic":[37],"to":[38,87,92],"monoclinic":[39],"for":[40,73,188],"400":[41,78],"degrees":[42,64,79,110,124,148],"C.":[43],"Elemental":[44],"analysis":[45],"that":[47,177],"temperature":[49],"affects":[50],"stoichiometric":[52],"behavior":[53,70],"oxide,":[56],"with":[57,119],"a":[58,114,128,156,181],"higher":[59,115],"oxygen":[60,151,163,178],"concentration":[61],"350":[63,123],"C":[65,80,111,125],"and":[66,133],"above.":[67],"The":[68,94,108,122],"switching":[69,102,137,171,186],"differs":[71],"significantly":[72],"each":[74],"device":[75,81,112,126],"whereby":[76],"no":[83],"successful":[84,100],"switching,":[85],"due":[86],"change":[89],"in":[90,136,169,184],"monoclinic.":[93],"two":[95],"lower":[96,129],"both":[98],"show":[99],"bipolar":[101],"which":[103,167],"set":[104],"negative":[106],"voltages.":[107],"300":[109,147],"Roff/Ron":[116,130],"13.9,":[118],"superior":[120],"endurance.":[121],"5.5":[132],"deterioration":[135],"properties":[138],"as":[139],"number":[141],"cycles":[143],"are":[144,165],"increased.":[145],"At":[146],"C,":[149],"ratio":[153],"minimum;":[157],"hence":[158],"greatest":[160],"amount":[161],"vacancies":[164,179],"present,":[166],"results":[168],"improved":[170],"characteristics.":[172],"This":[173],"supports":[174],"theory":[176],"play":[180],"key":[182],"role":[183],"mechanism":[187],"metal":[189],"RRAM":[191],"devices.":[192]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":2}],"updated_date":"2026-07-02T09:51:11.867554","created_date":"2025-10-10T00:00:00"}