{"id":"https://openalex.org/W1967744327","doi":"https://doi.org/10.1109/iscas.2014.6865155","title":"Design guidelines for 3D RRAM cross-point architecture","display_name":"Design guidelines for 3D RRAM cross-point architecture","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W1967744327","doi":"https://doi.org/10.1109/iscas.2014.6865155","mag":"1967744327"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2014.6865155","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2014.6865155","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054894631","display_name":"Shimeng Yu","orcid":"https://orcid.org/0000-0002-0068-3652"},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Shimeng Yu","raw_affiliation_strings":["School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, AZ, USA","Sch. of Comput., Inf., & Decision Syst. Eng., Arizona State Univ., Tempe, AZ, USA"],"affiliations":[{"raw_affiliation_string":"School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]},{"raw_affiliation_string":"Sch. of Comput., Inf., & Decision Syst. Eng., Arizona State Univ., Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102275673","display_name":"Yexin Deng","orcid":null},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yexin Deng","raw_affiliation_strings":["Instiitute of Microelectronics, Peking University, Beijing, China","Inst. of Microelectron. Peking Univ., Beijing, China"],"affiliations":[{"raw_affiliation_string":"Instiitute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Inst. of Microelectron. Peking Univ., Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008633924","display_name":"Bin Gao","orcid":"https://orcid.org/0000-0002-2417-983X"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bin Gao","raw_affiliation_strings":["Instiitute of Microelectronics, Peking University, Beijing, China","Inst. of Microelectron. Peking Univ., Beijing, China"],"affiliations":[{"raw_affiliation_string":"Instiitute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Inst. of Microelectron. Peking Univ., Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089747900","display_name":"Peng Huang","orcid":"https://orcid.org/0000-0003-3280-0099"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Peng Huang","raw_affiliation_strings":["Instiitute of Microelectronics, Peking University, Beijing, China","Inst. of Microelectron. Peking Univ., Beijing, China"],"affiliations":[{"raw_affiliation_string":"Instiitute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Inst. of Microelectron. Peking Univ., Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100443083","display_name":"Bing Chen","orcid":"https://orcid.org/0000-0001-5284-8618"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bing Chen","raw_affiliation_strings":["Instiitute of Microelectronics, Peking University, Beijing, China","Inst. of Microelectron. Peking Univ., Beijing, China"],"affiliations":[{"raw_affiliation_string":"Instiitute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Inst. of Microelectron. Peking Univ., Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100324668","display_name":"Xiaoyan Liu","orcid":"https://orcid.org/0009-0007-8018-651X"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaoyan Liu","raw_affiliation_strings":["Instiitute of Microelectronics, Peking University, Beijing, China","Inst. of Microelectron. Peking Univ., Beijing, China"],"affiliations":[{"raw_affiliation_string":"Instiitute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Inst. of Microelectron. Peking Univ., Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010857702","display_name":"Jinfeng Kang","orcid":"https://orcid.org/0000-0002-6286-0423"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jinfeng Kang","raw_affiliation_strings":["Instiitute of Microelectronics, Peking University, Beijing, China","Inst. of Microelectron. Peking Univ., Beijing, China"],"affiliations":[{"raw_affiliation_string":"Instiitute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Inst. of Microelectron. Peking Univ., Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109924137","display_name":"Hong-Yu Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hong-Yu Chen","raw_affiliation_strings":["Department of Electrical Engineering, Stanford University, CA, USA","[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101723758","display_name":"Zizhen Jiang","orcid":"https://orcid.org/0000-0003-2595-9456"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zizhen Jiang","raw_affiliation_strings":["Department of Electrical Engineering, Stanford University, CA, USA","[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059975258","display_name":"H.\u2010S. Philip Wong","orcid":"https://orcid.org/0000-0002-0096-1472"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.-S. Philip Wong","raw_affiliation_strings":["Department of Electrical Engineering, Stanford University, CA, USA","[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Stanford University, CA, USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5054894631"],"corresponding_institution_ids":["https://openalex.org/I55732556"],"apc_list":null,"apc_paid":null,"fwci":1.0467,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.79120081,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"421","last_page":"424"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.9142941832542419},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.643368661403656},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.6240118741989136},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6132365465164185},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.5693838596343994},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5576924085617065},{"id":"https://openalex.org/keywords/point","display_name":"Point (geometry)","score":0.44584712386131287},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.442697674036026},{"id":"https://openalex.org/keywords/latency","display_name":"Latency (audio)","score":0.4314524829387665},{"id":"https://openalex.org/keywords/architecture","display_name":"Architecture","score":0.4149315059185028},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39478573203086853},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.23453092575073242},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.21268698573112488},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17227762937545776},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.09668853878974915},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.07821843028068542}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.9142941832542419},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.643368661403656},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.6240118741989136},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6132365465164185},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.5693838596343994},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5576924085617065},{"id":"https://openalex.org/C28719098","wikidata":"https://www.wikidata.org/wiki/Q44946","display_name":"Point (geometry)","level":2,"score":0.44584712386131287},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.442697674036026},{"id":"https://openalex.org/C82876162","wikidata":"https://www.wikidata.org/wiki/Q17096504","display_name":"Latency (audio)","level":2,"score":0.4314524829387665},{"id":"https://openalex.org/C123657996","wikidata":"https://www.wikidata.org/wiki/Q12271","display_name":"Architecture","level":2,"score":0.4149315059185028},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39478573203086853},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.23453092575073242},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21268698573112488},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17227762937545776},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.09668853878974915},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.07821843028068542},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C31972630","wikidata":"https://www.wikidata.org/wiki/Q844240","display_name":"Computer vision","level":1,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2014.6865155","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2014.6865155","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Symposium on Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1596998040","https://openalex.org/W1976903415","https://openalex.org/W1979044707","https://openalex.org/W2004823737","https://openalex.org/W2040578542","https://openalex.org/W2049639700","https://openalex.org/W2085407034","https://openalex.org/W2133557550","https://openalex.org/W2319475254","https://openalex.org/W2543446546","https://openalex.org/W6635836132"],"related_works":["https://openalex.org/W2204879205","https://openalex.org/W2096437374","https://openalex.org/W1943174035","https://openalex.org/W3195722497","https://openalex.org/W1980301972","https://openalex.org/W2167784970","https://openalex.org/W2587448511","https://openalex.org/W4301193134","https://openalex.org/W2199653281","https://openalex.org/W3111786897"],"abstract_inverted_index":{"Design":[0],"guidelines":[1],"were":[2,25,55,98],"proposed":[3],"to":[4,83],"evaluate":[5],"and":[6,37,93],"optimize":[7],"the":[8,28,38,47,51,63,66,71,75,84,105,109,118,121],"3D":[9,16,43,79],"RRAM":[10,68,77,113],"cross-point":[11,44],"architecture":[12,45],"by":[13],"a":[14],"full-size":[15],"circuit":[17],"simulation":[18],"in":[19,57],"SPICE.":[20],"The":[21,100,123],"performance":[22],"metrics":[23],"that":[24,103],"evaluated":[26],"include":[27,108],"write/read":[29],"margin,":[30],"access":[31],"latency,":[32],"energy":[33],"consumption":[34],"per":[35,40],"programming,":[36],"density":[39],"bit.":[41],"Different":[42],"including":[46],"horizontally":[48],"stacked":[49,53],"or":[50],"vertically":[52],"structure":[54],"compared":[56],"terms":[58],"of":[59,65,74,86,120],"these":[60],"metrics,":[61],"revealing":[62],"advantages":[64],"vertical":[67,76,90,94],"structure.":[69],"Then":[70],"scaling":[72,85,106],"trend":[73,107],"based":[78],"array":[80],"with":[81],"respect":[82],"lateral":[87],"feature":[88],"size,":[89],"electrode":[91],"thickness":[92,97],"isolation":[95],"layer":[96],"evaluated.":[99],"design":[101,124],"parameters":[102,130],"affect":[104],"metal":[110],"interconnect":[111],"resistance,":[112],"on-state":[114],"cell":[115],"resistance":[116],"(or":[117],"nonlinearity":[119],"I-V).":[122],"trade-offs":[125],"are":[126],"discussed":[127],"considering":[128],"those":[129],"constraints.":[131]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":4},{"year":2017,"cited_by_count":5}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}