{"id":"https://openalex.org/W2008671930","doi":"https://doi.org/10.1109/iscas.2013.6572031","title":"A compact analog active time delay line using SiGe BiCMOS technology","display_name":"A compact analog active time delay line using SiGe BiCMOS technology","publication_year":2013,"publication_date":"2013-05-01","ids":{"openalex":"https://openalex.org/W2008671930","doi":"https://doi.org/10.1109/iscas.2013.6572031","mag":"2008671930"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2013.6572031","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2013.6572031","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International Symposium on Circuits and Systems (ISCAS2013)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058969553","display_name":"Mohamed Hamouda","orcid":"https://orcid.org/0000-0002-4710-7468"},"institutions":[{"id":"https://openalex.org/I181369854","display_name":"Friedrich-Alexander-Universit\u00e4t Erlangen-N\u00fcrnberg","ror":"https://ror.org/00f7hpc57","country_code":"DE","type":"education","lineage":["https://openalex.org/I181369854"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. Hamouda","raw_affiliation_strings":["Institute for Electronics Engineering, University of Erlangen-Nuremberg, Erlangen, Germany","Inst. for Electron. Eng., Univ. of Erlangen- Nuremberg, Erlangen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Electronics Engineering, University of Erlangen-Nuremberg, Erlangen, Germany","institution_ids":["https://openalex.org/I181369854"]},{"raw_affiliation_string":"Inst. for Electron. Eng., Univ. of Erlangen- Nuremberg, Erlangen, Germany","institution_ids":["https://openalex.org/I181369854"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063161060","display_name":"Georg Fischer","orcid":"https://orcid.org/0000-0002-4033-2005"},"institutions":[{"id":"https://openalex.org/I181369854","display_name":"Friedrich-Alexander-Universit\u00e4t Erlangen-N\u00fcrnberg","ror":"https://ror.org/00f7hpc57","country_code":"DE","type":"education","lineage":["https://openalex.org/I181369854"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Fischer","raw_affiliation_strings":["Institute for Electronics Engineering, University of Erlangen-Nuremberg, Erlangen, Germany","Inst. for Electron. Eng., Univ. of Erlangen- Nuremberg, Erlangen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Electronics Engineering, University of Erlangen-Nuremberg, Erlangen, Germany","institution_ids":["https://openalex.org/I181369854"]},{"raw_affiliation_string":"Inst. for Electron. Eng., Univ. of Erlangen- Nuremberg, Erlangen, Germany","institution_ids":["https://openalex.org/I181369854"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070760948","display_name":"Robert Weigel","orcid":"https://orcid.org/0000-0002-3131-1800"},"institutions":[{"id":"https://openalex.org/I181369854","display_name":"Friedrich-Alexander-Universit\u00e4t Erlangen-N\u00fcrnberg","ror":"https://ror.org/00f7hpc57","country_code":"DE","type":"education","lineage":["https://openalex.org/I181369854"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Weigel","raw_affiliation_strings":["Institute for Electronics Engineering, University of Erlangen-Nuremberg, Erlangen, Germany","Inst. for Electron. Eng., Univ. of Erlangen- Nuremberg, Erlangen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Electronics Engineering, University of Erlangen-Nuremberg, Erlangen, Germany","institution_ids":["https://openalex.org/I181369854"]},{"raw_affiliation_string":"Inst. for Electron. Eng., Univ. of Erlangen- Nuremberg, Erlangen, Germany","institution_ids":["https://openalex.org/I181369854"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014024883","display_name":"Thomas Ussmueller","orcid":"https://orcid.org/0000-0001-7174-4670"},"institutions":[{"id":"https://openalex.org/I181369854","display_name":"Friedrich-Alexander-Universit\u00e4t Erlangen-N\u00fcrnberg","ror":"https://ror.org/00f7hpc57","country_code":"DE","type":"education","lineage":["https://openalex.org/I181369854"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"T. Ussmueller","raw_affiliation_strings":["Institute for Electronics Engineering, University of Erlangen-Nuremberg, Erlangen, Germany","Inst. for Electron. Eng., Univ. of Erlangen- Nuremberg, Erlangen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Electronics Engineering, University of Erlangen-Nuremberg, Erlangen, Germany","institution_ids":["https://openalex.org/I181369854"]},{"raw_affiliation_string":"Inst. for Electron. Eng., Univ. of Erlangen- Nuremberg, Erlangen, Germany","institution_ids":["https://openalex.org/I181369854"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I181369854"],"apc_list":null,"apc_paid":null,"fwci":2.4318,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.88568321,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1055","last_page":"1058"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.7233690023422241},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.6906799077987671},{"id":"https://openalex.org/keywords/line","display_name":"Line (geometry)","score":0.5599662065505981},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5026040077209473},{"id":"https://openalex.org/keywords/ranging","display_name":"Ranging","score":0.42217355966567993},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41426047682762146},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36012744903564453},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3002937436103821},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1977328062057495},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1406574249267578},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.13119345903396606},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.11098453402519226},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07977572083473206}],"concepts":[{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.7233690023422241},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.6906799077987671},{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.5599662065505981},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5026040077209473},{"id":"https://openalex.org/C115051666","wikidata":"https://www.wikidata.org/wiki/Q6522493","display_name":"Ranging","level":2,"score":0.42217355966567993},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41426047682762146},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36012744903564453},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3002937436103821},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1977328062057495},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1406574249267578},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13119345903396606},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.11098453402519226},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07977572083473206},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2013.6572031","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2013.6572031","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International Symposium on Circuits and Systems (ISCAS2013)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.44999998807907104,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1490870352","https://openalex.org/W1923769013","https://openalex.org/W1968187234","https://openalex.org/W2035570593","https://openalex.org/W2098497873","https://openalex.org/W2107605478","https://openalex.org/W2109045303","https://openalex.org/W2110005620","https://openalex.org/W6629508913"],"related_works":["https://openalex.org/W1492027935","https://openalex.org/W2140183546","https://openalex.org/W1544173589","https://openalex.org/W2537721720","https://openalex.org/W4387933462","https://openalex.org/W2140681148","https://openalex.org/W1943862574","https://openalex.org/W2154960098","https://openalex.org/W2555993941","https://openalex.org/W1586292687"],"abstract_inverted_index":{"This":[0],"work":[1],"discusses":[2],"the":[3,30,40,90],"design":[4,21,27],"of":[5,32,56,65,83,89],"a":[6,54,61,72,81],"60ps":[7],"delay":[8,55],"element":[9],"for":[10],"UWB":[11],"analog":[12],"signals":[13],"ranging":[14],"from":[15],"0.05":[16],"up":[17,57],"to":[18,39,52,58],"8GHz.":[19],"The":[20,43,67,85],"is":[22,46,69,92],"implemented":[23],"using":[24,71],"active":[25],"architecture":[26,45],"which":[28],"have":[29,53],"advantage":[31],"being":[33],"very":[34],"compact":[35],"in":[36],"area":[37,88],"compared":[38],"passive":[41],"architectures.":[42],"proposed":[44],"flexible":[47],"and":[48],"can":[49],"be":[50],"cascaded":[51],"200ps":[59],"with":[60],"maximum":[62],"insertion":[63],"loss":[64],"3dB.":[66],"circuit":[68,91],"designed":[70],"low":[73],"cost":[74],"0.25\u03bcm":[75],"95GHz":[76],"fmaxSiGe-HBT-BiCMOS":[77],"process":[78],"technology":[79],"consuming":[80],"power":[82],"121mW.":[84],"estimated":[86],"consumed":[87],"0.49mm2.":[93]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":3}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}