{"id":"https://openalex.org/W2107074037","doi":"https://doi.org/10.1109/iscas.2011.5938058","title":"A nanopower CMOS bandgap reference with 30ppm/degree C from &amp;#x2212;30 degree C to 150 degree C","display_name":"A nanopower CMOS bandgap reference with 30ppm/degree C from &amp;#x2212;30 degree C to 150 degree C","publication_year":2011,"publication_date":"2011-05-01","ids":{"openalex":"https://openalex.org/W2107074037","doi":"https://doi.org/10.1109/iscas.2011.5938058","mag":"2107074037"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2011.5938058","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2011.5938058","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Symposium of Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073243976","display_name":"Pengpeng Yuan","orcid":null},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Pengpeng Yuan","raw_affiliation_strings":["Institution of Microelectronics, Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institution of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100356864","display_name":"Zhihua Wang","orcid":"https://orcid.org/0000-0001-6567-0759"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhihua Wang","raw_affiliation_strings":["Institution of Microelectronics, Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institution of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100417608","display_name":"Dongmei Li","orcid":"https://orcid.org/0000-0002-2598-657X"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongmei Li","raw_affiliation_strings":["Electronic Engineering Department, Tsinghua University, Beijing, China","Electronic Engineering Department Tsinghua University Beijing China"],"affiliations":[{"raw_affiliation_string":"Electronic Engineering Department, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"Electronic Engineering Department Tsinghua University Beijing China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100327780","display_name":"Xin Wang","orcid":"https://orcid.org/0000-0001-5492-8152"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xin Wang","raw_affiliation_strings":["Electronic Engineering Department, Tsinghua University, Beijing, China","Electronic Engineering Department Tsinghua University Beijing China"],"affiliations":[{"raw_affiliation_string":"Electronic Engineering Department, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"Electronic Engineering Department Tsinghua University Beijing China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100657035","display_name":"Liyuan Liu","orcid":"https://orcid.org/0000-0003-2585-323X"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liyuan Liu","raw_affiliation_strings":["Electronic Engineering Department, Tsinghua University, Beijing, China","Electronic Engineering Department Tsinghua University Beijing China"],"affiliations":[{"raw_affiliation_string":"Electronic Engineering Department, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"Electronic Engineering Department Tsinghua University Beijing China","institution_ids":["https://openalex.org/I99065089"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5073243976"],"corresponding_institution_ids":["https://openalex.org/I99065089"],"apc_list":null,"apc_paid":null,"fwci":0.8394,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.74446581,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"2285","last_page":"2288"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.9231969118118286},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.8847315311431885},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.7148866653442383},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7016339898109436},{"id":"https://openalex.org/keywords/degree","display_name":"Degree (music)","score":0.6747924089431763},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5859553813934326},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.5236002206802368},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5097526907920837},{"id":"https://openalex.org/keywords/band-gap","display_name":"Band gap","score":0.46015384793281555},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.4117085337638855},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3674449324607849},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3279185891151428},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.32441848516464233},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3180057406425476},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.29068151116371155},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22138041257858276},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.1254374086856842}],"concepts":[{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.9231969118118286},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.8847315311431885},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.7148866653442383},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7016339898109436},{"id":"https://openalex.org/C2775997480","wikidata":"https://www.wikidata.org/wiki/Q586277","display_name":"Degree (music)","level":2,"score":0.6747924089431763},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5859553813934326},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.5236002206802368},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5097526907920837},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.46015384793281555},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.4117085337638855},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3674449324607849},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3279185891151428},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.32441848516464233},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3180057406425476},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.29068151116371155},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22138041257858276},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.1254374086856842},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2011.5938058","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2011.5938058","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Symposium of Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8899999856948853,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W649475307","https://openalex.org/W1973745339","https://openalex.org/W2032998311","https://openalex.org/W2118526058","https://openalex.org/W2139801901"],"related_works":["https://openalex.org/W2806295079","https://openalex.org/W2370820504","https://openalex.org/W2133199116","https://openalex.org/W2347289947","https://openalex.org/W2159904735","https://openalex.org/W2364640622","https://openalex.org/W2390376289","https://openalex.org/W2907906161","https://openalex.org/W2372270451","https://openalex.org/W1970992322"],"abstract_inverted_index":{"A":[0],"nanopower":[1,41],"subthreshold":[2,54,69],"bandgap":[3,55,70],"reference":[4,94,104,111],"with":[5,40],"30ppm/\u00b0C":[6],"from":[7,121],"-30\u00b0C":[8],"to":[9,124],"150\u00b0C":[10,74],"has":[11],"been":[12],"implemented":[13],"in":[14,57],"0.18\u03bcm":[15],"CMOS.":[16],"This":[17,88],"design":[18,37],"is":[19,28,38,46,113,119],"based":[20],"on":[21],"weighted":[22],"\u0394V":[23],"<sub":[24],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[25,143],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">GS</sub>":[26],"and":[27,85],"free":[29],"of":[30,35,53,101,109],"resistors.":[31],"The":[32,106,127,137],"major":[33],"advantage":[34],"this":[36],"that":[39],"consumption,":[42],"the":[43,102,110,116],"temperature":[44,59],"range":[45],"extremely":[47],"wide.":[48],"To":[49],"achieve":[50],"high":[51,58],"performance":[52],"operating":[56],"(above":[60],"80\u00b0C),":[61],"a":[62],"leakage":[63],"current":[64],"elimination":[65],"technique":[66],"which":[67],"enables":[68],"operate":[71],"properly":[72],"until":[73],"was":[75],"proposed.":[76],"Such":[77],"modification":[78],"does":[79],"not":[80],"require":[81],"additional":[82],"die":[83],"area":[84,139],"power":[86],"consumption.":[87],"topology":[89],"can":[90],"also":[91],"generate":[92],"multiple":[93],"voltages":[95],"whose":[96],"values":[97],"are":[98],"integer":[99],"times":[100],"minimum":[103],"voltage.":[105],"line":[107],"regulation":[108],"voltage":[112,118],"0.677mV/V":[114],"when":[115],"supply":[117],"increased":[120],"1":[122],"V":[123],"2.5":[125],"V.":[126],"core":[128],"circuit":[129],"consumes":[130],"46nW":[131],"at":[132,134],"IV":[133],"room":[135],"temperature.":[136],"active":[138],"occupies":[140],"0.0036mm":[141],"<sup":[142],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[144],".":[145]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}