{"id":"https://openalex.org/W2124273566","doi":"https://doi.org/10.1109/iscas.2011.5938050","title":"Silicon-on-insulator (SOI) integration for organic field effect transistor (OFET) based circuits","display_name":"Silicon-on-insulator (SOI) integration for organic field effect transistor (OFET) based circuits","publication_year":2011,"publication_date":"2011-05-01","ids":{"openalex":"https://openalex.org/W2124273566","doi":"https://doi.org/10.1109/iscas.2011.5938050","mag":"2124273566"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2011.5938050","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2011.5938050","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Symposium of Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021443839","display_name":"Recep \u00d6zg\u00fcn","orcid":null},"institutions":[{"id":"https://openalex.org/I145311948","display_name":"Johns Hopkins University","ror":"https://ror.org/00za53h95","country_code":"US","type":"education","lineage":["https://openalex.org/I145311948"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Recep Ozgun","raw_affiliation_strings":["Electrical and Computer Engineering, Johns Hopkins University, Baltimore, MD, USA","Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, Johns Hopkins University, Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]},{"raw_affiliation_string":"Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038510399","display_name":"Byung Jun Jung","orcid":"https://orcid.org/0000-0003-3839-5725"},"institutions":[{"id":"https://openalex.org/I145311948","display_name":"Johns Hopkins University","ror":"https://ror.org/00za53h95","country_code":"US","type":"education","lineage":["https://openalex.org/I145311948"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Byung J. Jung","raw_affiliation_strings":["Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, USA","Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]},{"raw_affiliation_string":"Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071441566","display_name":"Bal Mukund Dhar","orcid":null},"institutions":[{"id":"https://openalex.org/I145311948","display_name":"Johns Hopkins University","ror":"https://ror.org/00za53h95","country_code":"US","type":"education","lineage":["https://openalex.org/I145311948"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bal M. Dhar","raw_affiliation_strings":["Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, USA","Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]},{"raw_affiliation_string":"Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062942206","display_name":"Howard E. Katz","orcid":"https://orcid.org/0000-0002-3190-2475"},"institutions":[{"id":"https://openalex.org/I145311948","display_name":"Johns Hopkins University","ror":"https://ror.org/00za53h95","country_code":"US","type":"education","lineage":["https://openalex.org/I145311948"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Howard E. Katz","raw_affiliation_strings":["Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, USA","Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]},{"raw_affiliation_string":"Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057789499","display_name":"Andreas G. Andreou","orcid":"https://orcid.org/0000-0003-3826-600X"},"institutions":[{"id":"https://openalex.org/I145311948","display_name":"Johns Hopkins University","ror":"https://ror.org/00za53h95","country_code":"US","type":"education","lineage":["https://openalex.org/I145311948"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andreas G. Andreou","raw_affiliation_strings":["Electrical and Computer Engineering, Johns Hopkins University, Baltimore, MD, USA","Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, Johns Hopkins University, Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]},{"raw_affiliation_string":"Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA","institution_ids":["https://openalex.org/I145311948"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.15049815,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"2253","last_page":"2256"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/organic-field-effect-transistor","display_name":"Organic field-effect transistor","score":0.8581185340881348},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7470501065254211},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6051684617996216},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5974464416503906},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.5696130394935608},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5560474395751953},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.5520461797714233},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5515524744987488},{"id":"https://openalex.org/keywords/photolithography","display_name":"Photolithography","score":0.5107862949371338},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.49440550804138184},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4667202830314636},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4510669708251953},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39976704120635986},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.3748105764389038},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.31497251987457275},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.2586390972137451},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10321670770645142}],"concepts":[{"id":"https://openalex.org/C99903730","wikidata":"https://www.wikidata.org/wiki/Q1066726","display_name":"Organic field-effect transistor","level":5,"score":0.8581185340881348},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7470501065254211},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6051684617996216},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5974464416503906},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5696130394935608},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5560474395751953},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.5520461797714233},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5515524744987488},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.5107862949371338},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.49440550804138184},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4667202830314636},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4510669708251953},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39976704120635986},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.3748105764389038},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.31497251987457275},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2586390972137451},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10321670770645142},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2011.5938050","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2011.5938050","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Symposium of Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1480193527","https://openalex.org/W1967107943","https://openalex.org/W1974240058","https://openalex.org/W1999043089","https://openalex.org/W1999665858","https://openalex.org/W2000024623","https://openalex.org/W2004728577","https://openalex.org/W2005306164","https://openalex.org/W2012280951","https://openalex.org/W2035434232","https://openalex.org/W2045798014","https://openalex.org/W2058257129","https://openalex.org/W2062116934","https://openalex.org/W2063529487","https://openalex.org/W2068945209","https://openalex.org/W2093984735","https://openalex.org/W2094036162","https://openalex.org/W2107210296","https://openalex.org/W2127332949"],"related_works":["https://openalex.org/W2088495608","https://openalex.org/W4249894965","https://openalex.org/W2463928969","https://openalex.org/W1980920366","https://openalex.org/W1995644683","https://openalex.org/W2020920233","https://openalex.org/W2115397980","https://openalex.org/W4387573803","https://openalex.org/W1964916674","https://openalex.org/W2030288446"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"report":[4],"the":[5,47,51],"first":[6],"silicon-on-insulator":[7],"(SOI)":[8],"integration":[9],"technique":[10,38],"for":[11,58,109],"organic":[12],"field":[13],"effect":[14],"transistor":[15],"(OFET)":[16],"based":[17],"circuits.":[18],"Proposed":[19],"design":[20],"flow":[21],"relies":[22],"on":[23,46],"only":[24],"basic":[25],"micro-fabrication":[26],"processes":[27],"such":[28,75],"as":[29,76],"photolithography":[30],"and":[31,49,53,56,68,78,95,101,111],"physical":[32],"vapor":[33],"deposition.":[34],"This":[35],"novel":[36],"fabrication":[37],"allows":[39],"patterning":[40,55],"of":[41,70,105],"conductive":[42],"silicon":[43],"gate":[44],"islands":[45],"subtrate":[48],"eases":[50],"via":[52],"interconnect":[54],"deposition":[57],"a":[59],"bottom-gate":[60],"OFET":[61],"configuration.":[62],"We":[63],"fabricated":[64],"pand":[65],"n-type":[66],"transistors,":[67],"proof":[69],"concept":[71],"OFET-based":[72],"complementary":[73],"circuits":[74],"inverter":[77],"NAND-gate.":[79],"Fabricated":[80],"CMOS":[81],"inverters":[82],"have":[83],"full":[84],"rail-to-rail":[85],"swing,":[86],"very":[87],"high":[88],"gain":[89],"(up":[90],"to":[91],"58.3":[92],"at":[93,97,113],"60V,":[94],"18.1":[96],"20V":[98],"supply":[99,115],"voltages),":[100],"outstanding":[102],"noise":[103],"margins":[104],"around":[106],"21V":[107],"symmetric":[108],"NMhigh":[110],"NMlow":[112],"60V":[114],"voltage.":[116]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}