{"id":"https://openalex.org/W2120983247","doi":"https://doi.org/10.1109/iscas.2011.5937945","title":"A new approach for electrothermal analysis of electronic circuits","display_name":"A new approach for electrothermal analysis of electronic circuits","publication_year":2011,"publication_date":"2011-05-01","ids":{"openalex":"https://openalex.org/W2120983247","doi":"https://doi.org/10.1109/iscas.2011.5937945","mag":"2120983247"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2011.5937945","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2011.5937945","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Symposium of Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103283614","display_name":"Farah Mohammadi","orcid":"https://orcid.org/0009-0008-9947-3209"},"institutions":[{"id":"https://openalex.org/I530967","display_name":"Toronto Metropolitan University","ror":"https://ror.org/05g13zd79","country_code":"CA","type":"education","lineage":["https://openalex.org/I530967"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"F.A. Mohammadi","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Ryerson University, Toronto, ONT, Canada","Department of Electrical and Computer Engineering, Ryerson University, 350 Victoria Street, M5B 2K3, Toronto, Ontario, Canada#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Ryerson University, Toronto, ONT, Canada","institution_ids":["https://openalex.org/I530967"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Ryerson University, 350 Victoria Street, M5B 2K3, Toronto, Ontario, Canada#TAB#","institution_ids":["https://openalex.org/I530967"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014292300","display_name":"F. Farrokhi Farkhani","orcid":null},"institutions":[{"id":"https://openalex.org/I530967","display_name":"Toronto Metropolitan University","ror":"https://ror.org/05g13zd79","country_code":"CA","type":"education","lineage":["https://openalex.org/I530967"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"F. Farrokhi Farkhani","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Ryerson University, Toronto, ONT, Canada","Department of Electrical and Computer Engineering, Ryerson University, 350 Victoria Street, M5B 2K3, Toronto, Ontario, Canada#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Ryerson University, Toronto, ONT, Canada","institution_ids":["https://openalex.org/I530967"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Ryerson University, 350 Victoria Street, M5B 2K3, Toronto, Ontario, Canada#TAB#","institution_ids":["https://openalex.org/I530967"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037001734","display_name":"Shazzat Hossain","orcid":null},"institutions":[{"id":"https://openalex.org/I530967","display_name":"Toronto Metropolitan University","ror":"https://ror.org/05g13zd79","country_code":"CA","type":"education","lineage":["https://openalex.org/I530967"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"S. Hossain","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Ryerson University, Toronto, ONT, Canada","Department of Electrical and Computer Engineering, Ryerson University, 350 Victoria Street, M5B 2K3, Toronto, Ontario, Canada#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Ryerson University, Toronto, ONT, Canada","institution_ids":["https://openalex.org/I530967"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Ryerson University, 350 Victoria Street, M5B 2K3, Toronto, Ontario, Canada#TAB#","institution_ids":["https://openalex.org/I530967"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I530967"],"apc_list":null,"apc_paid":null,"fwci":0.895,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.72343921,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"33","issue":null,"first_page":"1844","last_page":"1847"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.683630108833313},{"id":"https://openalex.org/keywords/thermography","display_name":"Thermography","score":0.5867804288864136},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5296359062194824},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.5185842514038086},{"id":"https://openalex.org/keywords/thermal-analysis","display_name":"Thermal analysis","score":0.5052466988563538},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5038239359855652},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.49594005942344666},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4780048429965973},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46447813510894775},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.4391586482524872},{"id":"https://openalex.org/keywords/coupling","display_name":"Coupling (piping)","score":0.41307178139686584},{"id":"https://openalex.org/keywords/infrared","display_name":"Infrared","score":0.4108317792415619},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40413904190063477},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.36144354939460754},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.25155651569366455},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2297385036945343},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.18269649147987366},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.1518184244632721},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.09238505363464355},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08256003260612488}],"concepts":[{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.683630108833313},{"id":"https://openalex.org/C2779222261","wikidata":"https://www.wikidata.org/wiki/Q624587","display_name":"Thermography","level":3,"score":0.5867804288864136},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5296359062194824},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.5185842514038086},{"id":"https://openalex.org/C129446986","wikidata":"https://www.wikidata.org/wiki/Q542419","display_name":"Thermal analysis","level":3,"score":0.5052466988563538},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5038239359855652},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.49594005942344666},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4780048429965973},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46447813510894775},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4391586482524872},{"id":"https://openalex.org/C131584629","wikidata":"https://www.wikidata.org/wiki/Q4308705","display_name":"Coupling (piping)","level":2,"score":0.41307178139686584},{"id":"https://openalex.org/C158355884","wikidata":"https://www.wikidata.org/wiki/Q11388","display_name":"Infrared","level":2,"score":0.4108317792415619},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40413904190063477},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.36144354939460754},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.25155651569366455},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2297385036945343},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18269649147987366},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.1518184244632721},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.09238505363464355},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08256003260612488},{"id":"https://openalex.org/C129307140","wikidata":"https://www.wikidata.org/wiki/Q6795880","display_name":"Maximum bubble pressure method","level":3,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C157915830","wikidata":"https://www.wikidata.org/wiki/Q2928001","display_name":"Bubble","level":2,"score":0.0},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2011.5937945","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2011.5937945","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Symposium of Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.699999988079071,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2035224686","https://openalex.org/W2086937131","https://openalex.org/W2103749478","https://openalex.org/W2149009819","https://openalex.org/W2149813938","https://openalex.org/W2159725583","https://openalex.org/W2164008175","https://openalex.org/W4242339496","https://openalex.org/W4244593655","https://openalex.org/W4253232140","https://openalex.org/W6682162822"],"related_works":["https://openalex.org/W2620662450","https://openalex.org/W2069527050","https://openalex.org/W174278852","https://openalex.org/W2368607384","https://openalex.org/W2016009248","https://openalex.org/W2008280940","https://openalex.org/W1553428650","https://openalex.org/W2391588106","https://openalex.org/W2156612433","https://openalex.org/W3212153468"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"a":[3,33,62],"new":[4],"methodology":[5],"and":[6,18,36],"implementation":[7],"of":[8,21,61],"an":[9,41],"experimental":[10],"infrared":[11],"(IR)":[12],"measurement":[13,39],"technique":[14],"for":[15],"the":[16,47,59],"thermal":[17],"electrothermal":[19,27],"analysis":[20,28],"electronic":[22],"circuits":[23],"is":[24,29,55],"presented.":[25],"The":[26],"based":[30],"on":[31],"coupling":[32],"circuit":[34],"simulator":[35],"IR":[37],"thermography":[38],"through":[40],"application":[42],"program":[43],"interface":[44],"that":[45],"updates":[46],"temperature":[48],"information":[49],"in":[50],"near-real":[51],"time.":[52],"This":[53],"method":[54],"applied":[56],"to":[57],"study":[58],"performance":[60],"power":[63],"MOSFET":[64],"circuit.":[65]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}