{"id":"https://openalex.org/W2122855317","doi":"https://doi.org/10.1109/iscas.2011.5937835","title":"Design of power-rail ESD clamp circuit with adjustable holding voltage against mis-trigger or transient-induced latch-on events","display_name":"Design of power-rail ESD clamp circuit with adjustable holding voltage against mis-trigger or transient-induced latch-on events","publication_year":2011,"publication_date":"2011-05-01","ids":{"openalex":"https://openalex.org/W2122855317","doi":"https://doi.org/10.1109/iscas.2011.5937835","mag":"2122855317"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2011.5937835","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2011.5937835","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Symposium of Circuits and Systems (ISCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102214259","display_name":"Chih-Ting Yeh","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]},{"id":"https://openalex.org/I4210148468","display_name":"Industrial Technology Research Institute","ror":"https://ror.org/05szzwt63","country_code":"TW","type":"nonprofit","lineage":["https://openalex.org/I4210148468"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chih-Ting Yeh","raw_affiliation_strings":["Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Information and Communications Research Laboratories, Industrial Technology and Research Institute, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Information and Communications Research Laboratories, Industrial Technology and Research Institute, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210148468"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083786075","display_name":"Yung-Chih Liang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210148468","display_name":"Industrial Technology Research Institute","ror":"https://ror.org/05szzwt63","country_code":"TW","type":"nonprofit","lineage":["https://openalex.org/I4210148468"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yung-Chih Liang","raw_affiliation_strings":["Information and Communications Research Laboratories, Industrial Technology and Research Institute, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Information and Communications Research Laboratories, Industrial Technology and Research Institute, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210148468"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043540734","display_name":"Ming\u2010Dou Ker","orcid":"https://orcid.org/0000-0003-3622-181X"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]},{"id":"https://openalex.org/I98298690","display_name":"I-Shou University","ror":"https://ror.org/04d7e4m76","country_code":"TW","type":"education","lineage":["https://openalex.org/I98298690"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ming-Dou Ker","raw_affiliation_strings":["Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan","Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I98298690"]},{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.5406,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.72142303,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1403","last_page":"1406"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.8260918855667114},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.8017401695251465},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.7070567607879639},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6463993787765503},{"id":"https://openalex.org/keywords/clamper","display_name":"Clamper","score":0.5838550925254822},{"id":"https://openalex.org/keywords/transient-voltage-suppressor","display_name":"Transient voltage suppressor","score":0.5550197958946228},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.546660840511322},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5273239016532898},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5232381224632263},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.43780940771102905},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4307737350463867},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.41865792870521545},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.33438968658447266}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.8260918855667114},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.8017401695251465},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7070567607879639},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6463993787765503},{"id":"https://openalex.org/C64881904","wikidata":"https://www.wikidata.org/wiki/Q825778","display_name":"Clamper","level":3,"score":0.5838550925254822},{"id":"https://openalex.org/C14915586","wikidata":"https://www.wikidata.org/wiki/Q1653998","display_name":"Transient voltage suppressor","level":3,"score":0.5550197958946228},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.546660840511322},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5273239016532898},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5232381224632263},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.43780940771102905},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4307737350463867},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.41865792870521545},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33438968658447266},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2011.5937835","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2011.5937835","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Symposium of Circuits and Systems (ISCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.47999998927116394}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1527488180","https://openalex.org/W1565155074","https://openalex.org/W1589467559","https://openalex.org/W1966291942","https://openalex.org/W2102866901","https://openalex.org/W2108510307","https://openalex.org/W2109641950","https://openalex.org/W2118711829","https://openalex.org/W2124399691","https://openalex.org/W3143899571","https://openalex.org/W6631707745","https://openalex.org/W6633908552","https://openalex.org/W6676706392"],"related_works":["https://openalex.org/W2992364380","https://openalex.org/W3038876531","https://openalex.org/W2401021868","https://openalex.org/W2150404448","https://openalex.org/W2046430182","https://openalex.org/W2106341491","https://openalex.org/W2051382375","https://openalex.org/W2154271946","https://openalex.org/W1571396369","https://openalex.org/W2158430133"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"a":[3,33],"new":[4,52,69],"design":[5],"of":[6,22,50],"the":[7,12,19,41,47,51,65,68,84,100],"ESD-transient":[8,44,53,71],"detection":[9,45,54,72],"circuit":[10,55,73],"with":[11,74],"n-channel":[13],"metal-oxide-semiconductor":[14],"(nMOS)":[15],"transistor":[16,25],"drawn":[17],"in":[18,32],"layout":[20,48],"style":[21],"big":[23],"field-effect":[24],"(BigFET)":[26],"has":[27],"been":[28],"proposed":[29,70],"and":[30,103],"verified":[31],"65nm":[34],"1.2V":[35],"CMOS":[36],"process.":[37],"As":[38],"compared":[39],"to":[40],"traditional":[42],"RC-based":[43],"circuit,":[46],"area":[49],"can":[56,78],"be":[57],"greatly":[58],"reduced":[59],"by":[60],"more":[61],"than":[62],"54%.":[63],"From":[64],"experimental":[66],"results,":[67],"adjustable":[75],"holding":[76],"voltage":[77],"achieve":[79],"long":[80],"turn-on":[81],"duration":[82],"under":[83,99],"ESD":[85],"stress":[86],"condition,":[87],"as":[88,90],"well":[89],"better":[91],"immunity":[92],"against":[93],"mis-trigger":[94],"or":[95],"transient-induced":[96],"latch-on":[97],"event":[98],"fast":[101],"power-on":[102],"transient":[104],"noise":[105],"conditions.":[106]},"counts_by_year":[{"year":2014,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}