{"id":"https://openalex.org/W2106797741","doi":"https://doi.org/10.1109/iscas.2010.5537946","title":"Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier","display_name":"Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier","publication_year":2010,"publication_date":"2010-05-01","ids":{"openalex":"https://openalex.org/W2106797741","doi":"https://doi.org/10.1109/iscas.2010.5537946","mag":"2106797741"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2010.5537946","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2010.5537946","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of 2010 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064300757","display_name":"Xiuqin Wei","orcid":"https://orcid.org/0000-0001-8212-5787"},"institutions":[{"id":"https://openalex.org/I159385669","display_name":"Chiba University","ror":"https://ror.org/01hjzeq58","country_code":"JP","type":"education","lineage":["https://openalex.org/I159385669"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Xiuqin Wei","raw_affiliation_strings":["Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan"],"affiliations":[{"raw_affiliation_string":"Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan","institution_ids":["https://openalex.org/I159385669"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021227619","display_name":"Hiroo Sekiya","orcid":"https://orcid.org/0000-0003-3557-1463"},"institutions":[{"id":"https://openalex.org/I159385669","display_name":"Chiba University","ror":"https://ror.org/01hjzeq58","country_code":"JP","type":"education","lineage":["https://openalex.org/I159385669"]},{"id":"https://openalex.org/I19648265","display_name":"Wright State University","ror":"https://ror.org/04qk6pt94","country_code":"US","type":"education","lineage":["https://openalex.org/I19648265"]}],"countries":["JP","US"],"is_corresponding":false,"raw_author_name":"Hiroo Sekiya","raw_affiliation_strings":["Department of Electrical Engineering, Wright State University, Dayton, OH, USA","Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Wright State University, Dayton, OH, USA","institution_ids":["https://openalex.org/I19648265"]},{"raw_affiliation_string":"Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan","institution_ids":["https://openalex.org/I159385669"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112035972","display_name":"Shingo Kuroiwa","orcid":null},"institutions":[{"id":"https://openalex.org/I159385669","display_name":"Chiba University","ror":"https://ror.org/01hjzeq58","country_code":"JP","type":"education","lineage":["https://openalex.org/I159385669"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shingo Kuroiwa","raw_affiliation_strings":["Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan"],"affiliations":[{"raw_affiliation_string":"Graduate School of Advanced Integration Science, Chiba University, Chiba, Japan","institution_ids":["https://openalex.org/I159385669"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084848990","display_name":"Tadashi Suetsugu","orcid":"https://orcid.org/0000-0002-7044-2598"},"institutions":[{"id":"https://openalex.org/I31784960","display_name":"Fukuoka University","ror":"https://ror.org/04nt8b154","country_code":"JP","type":"education","lineage":["https://openalex.org/I31784960"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tadashi Suetsugu","raw_affiliation_strings":["Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka, Japan"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka, Japan","institution_ids":["https://openalex.org/I31784960"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064938602","display_name":"Marian K. Kazimierczuk","orcid":"https://orcid.org/0000-0003-4275-0507"},"institutions":[{"id":"https://openalex.org/I19648265","display_name":"Wright State University","ror":"https://ror.org/04qk6pt94","country_code":"US","type":"education","lineage":["https://openalex.org/I19648265"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Marian K. Kazimierczuk","raw_affiliation_strings":["Department of Electrical Engineering, Wright State University, Dayton, OH, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Wright State University, Dayton, OH, USA","institution_ids":["https://openalex.org/I19648265"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5064300757"],"corresponding_institution_ids":["https://openalex.org/I159385669"],"apc_list":null,"apc_paid":null,"fwci":0.2941,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.65469821,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"3200","last_page":"3203"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9918000102043152,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7460277080535889},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.70140540599823},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.6969568729400635},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6897908449172974},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5722358822822571},{"id":"https://openalex.org/keywords/waveform","display_name":"Waveform","score":0.5710775852203369},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.5073727965354919},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4948274493217468},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.47701191902160645},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.46820834279060364},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.40118664503097534},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3854042589664459},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3844537138938904},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3598055839538574},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.34255048632621765},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.26993975043296814},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25011417269706726}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7460277080535889},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.70140540599823},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.6969568729400635},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6897908449172974},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5722358822822571},{"id":"https://openalex.org/C197424946","wikidata":"https://www.wikidata.org/wiki/Q1165717","display_name":"Waveform","level":3,"score":0.5710775852203369},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.5073727965354919},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4948274493217468},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.47701191902160645},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46820834279060364},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.40118664503097534},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3854042589664459},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3844537138938904},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3598055839538574},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.34255048632621765},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.26993975043296814},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25011417269706726},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/iscas.2010.5537946","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2010.5537946","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of 2010 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.657.5381","is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.657.5381","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://www.s-lab.nd.chiba-u.jp/achievements/pdf/weiISCAS2010.pdf?origin%3Dpublication_detail","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2004512974","https://openalex.org/W2018150269","https://openalex.org/W2125616441","https://openalex.org/W2134358930","https://openalex.org/W2162566706"],"related_works":["https://openalex.org/W2906268959","https://openalex.org/W1526176912","https://openalex.org/W2385412623","https://openalex.org/W2082505892","https://openalex.org/W2543878150","https://openalex.org/W2258872751","https://openalex.org/W1566503697","https://openalex.org/W808580226","https://openalex.org/W1523219001","https://openalex.org/W2130827112"],"abstract_inverted_index":{"In":[0],"this":[1,73],"paper,":[2],"we":[3],"present":[4],"analytical":[5,68],"expressions":[6],"for":[7,13,89],"the":[8,15,19,26,31,52,56,60,67,82,85,91],"waveforms":[9,48],"and":[10,43,55,114],"design":[11,37],"equations":[12],"achieving":[14,90],"ZVS/ZDS":[16,62,94],"conditions":[17,63],"in":[18,72],"class-E":[20,61],"power":[21,98,106],"amplifier,":[22],"taking":[23],"into":[24],"account":[25],"gate-to-drain":[27,87],"parasitic":[28],"capacitance":[29,88],"of":[30,84],"MOSFET.":[32],"We":[33],"also":[34],"give":[35],"a":[36],"example":[38],"along":[39],"with":[40],"PSpice":[41,53],"simulation":[42,54],"experimental":[44,97],"results.":[45],"The":[46,70,96],"voltage":[47],"obtained":[49],"from":[50],"both":[51],"circuit":[57],"experiment":[58],"achieved":[59,101],"completely,":[64],"which":[65],"verify":[66],"expressions.":[69],"results":[71],"paper":[74],"indicate":[75],"that":[76],"it":[77],"is":[78],"important":[79],"to":[80],"consider":[81],"effect":[83],"MOSFET":[86],"class":[92],"E":[93],"conditions.":[95],"conversion":[99],"efficiency":[100],"92.8":[102],"%":[103],"at":[104],"output":[105],"P":[107],"<sub":[108],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[109],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">o</sub>":[110],"=":[111,118],"4.06":[112],"W":[113],"operating":[115],"frequency":[116],"f":[117],"7":[119],"MHz.":[120]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":3},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-04-05T17:49:38.594831","created_date":"2025-10-10T00:00:00"}