{"id":"https://openalex.org/W2042526628","doi":"https://doi.org/10.1109/iscas.2010.5537520","title":"SRAM design in fully-depleted SOI technology","display_name":"SRAM design in fully-depleted SOI technology","publication_year":2010,"publication_date":"2010-05-01","ids":{"openalex":"https://openalex.org/W2042526628","doi":"https://doi.org/10.1109/iscas.2010.5537520","mag":"2042526628"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2010.5537520","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2010.5537520","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of 2010 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041784384","display_name":"Borivoje Nikoli\u0107","orcid":"https://orcid.org/0000-0003-2324-1715"},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Borivoje Nikolic","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039545794","display_name":"Changhwan Shin","orcid":"https://orcid.org/0000-0001-6057-3773"},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Changhwan Shin","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004113819","display_name":"Min Hee Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Min Hee Cho","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104124868","display_name":"Xin Sun","orcid":null},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xin Sun","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039334041","display_name":"Tsu\u2010Jae King Liu","orcid":"https://orcid.org/0000-0002-1221-2540"},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tsu-Jae King Liu","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","SOITEC, 1010 Land Creek Cove, Austin, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]},{"raw_affiliation_string":"SOITEC, 1010 Land Creek Cove, Austin, TX, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065345119","display_name":"Bich-Yen Nguyen","orcid":"https://orcid.org/0000-0003-4347-4583"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Bich-Yen Nguyen","raw_affiliation_strings":["Soitec USA, Inc., Austin, TX, USA"],"affiliations":[{"raw_affiliation_string":"Soitec USA, Inc., Austin, TX, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5041784384"],"corresponding_institution_ids":["https://openalex.org/I95457486"],"apc_list":null,"apc_paid":null,"fwci":0.5773,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.71347415,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1707","last_page":"1710"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.933103084564209},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.9301062226295471},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.7504051923751831},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6541826725006104},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5925167202949524},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5631508827209473},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5217959880828857},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5028685927391052},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5007097721099854},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42252233624458313},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4217851161956787},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.410847932100296},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3748074769973755},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3653682470321655},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2945547103881836},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.260201632976532},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.06399223208427429}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.933103084564209},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.9301062226295471},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.7504051923751831},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6541826725006104},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5925167202949524},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5631508827209473},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5217959880828857},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5028685927391052},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5007097721099854},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42252233624458313},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4217851161956787},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.410847932100296},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3748074769973755},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3653682470321655},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2945547103881836},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.260201632976532},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.06399223208427429},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2010.5537520","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2010.5537520","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of 2010 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W1484361599","https://openalex.org/W1987839135","https://openalex.org/W2002612140","https://openalex.org/W2005075924","https://openalex.org/W2032880079","https://openalex.org/W2041626447","https://openalex.org/W2048782890","https://openalex.org/W2048980187","https://openalex.org/W2069286052","https://openalex.org/W2073927744","https://openalex.org/W2074994500","https://openalex.org/W2086648741","https://openalex.org/W2105175332","https://openalex.org/W2110290108","https://openalex.org/W2112854022","https://openalex.org/W2132065380","https://openalex.org/W2132357267","https://openalex.org/W2135818056","https://openalex.org/W2140823559","https://openalex.org/W2150952982","https://openalex.org/W2151276975","https://openalex.org/W2152224839","https://openalex.org/W2167981182","https://openalex.org/W2168101540","https://openalex.org/W2172203429","https://openalex.org/W2625444524","https://openalex.org/W3148792909","https://openalex.org/W4285719527","https://openalex.org/W6647314580","https://openalex.org/W6679657431"],"related_works":["https://openalex.org/W2326188151","https://openalex.org/W2031432268","https://openalex.org/W2042526628","https://openalex.org/W2386361943","https://openalex.org/W2149895879","https://openalex.org/W4250300609","https://openalex.org/W2010357007","https://openalex.org/W2765340795","https://openalex.org/W2545707786","https://openalex.org/W2133198051"],"abstract_inverted_index":{"Continued":[0],"increase":[1],"in":[2],"variability":[3,31],"is":[4,68],"a":[5],"challenge":[6],"for":[7,18],"SRAM":[8,73],"scaling":[9],"into":[10],"sub-22":[11],"nm":[12],"nodes,":[13],"and":[14,29,51,76],"presents":[15],"an":[16,55],"opportunity":[17],"the":[19,27],"introduction":[20],"of":[21,32,40],"alternate":[22],"technologies.":[23],"In":[24],"this":[25],"work,":[26],"performance":[28,75],"threshold-voltage":[30],"vertical":[33],"SOI":[34,45],"finFETs":[35],"are":[36,52],"compared":[37],"against":[38],"those":[39],"planar":[41,58],"fully":[42],"depleted":[43],"(FD)":[44],"MOSFETs":[46],"with":[47],"thin":[48],"buried":[49],"oxide,":[50],"presented":[53],"as":[54],"alternative":[56],"to":[57,70],"bulk":[59],"CMOS.":[60],"Analytical":[61],"modeling":[62],"derived":[63],"from":[64],"3D":[65],"device":[66],"simulations":[67],"used":[69],"estimate":[71],"six-transistor":[72],"cell":[74],"yield":[77],"metrics.":[78]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}