{"id":"https://openalex.org/W2101165123","doi":"https://doi.org/10.1109/iscas.2009.5118313","title":"45nm low-power embedded pseudo-SRAM with ECC-based auto-adjusted self-refresh scheme","display_name":"45nm low-power embedded pseudo-SRAM with ECC-based auto-adjusted self-refresh scheme","publication_year":2009,"publication_date":"2009-05-01","ids":{"openalex":"https://openalex.org/W2101165123","doi":"https://doi.org/10.1109/iscas.2009.5118313","mag":"2101165123"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2009.5118313","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2009.5118313","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103920793","display_name":"Suksoo Pyo","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Suk-Soo Pyo","raw_affiliation_strings":["School of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea","System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006063956","display_name":"Cheol-Ha Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Cheol-Ha Lee","raw_affiliation_strings":["System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078233817","display_name":"Gyun-Hong Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gyun-Hong Kim","raw_affiliation_strings":["System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015760089","display_name":"Kyu-Myung Choi","orcid":"https://orcid.org/0000-0001-8153-8344"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyu-Myung Choi","raw_affiliation_strings":["System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112318178","display_name":"Young-Hyun Jun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Hyun Jun","raw_affiliation_strings":["System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System LSI, Design Technology, Samsung Electronics Limited, Yongin si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5012892234","display_name":"Bai\u2010Sun Kong","orcid":"https://orcid.org/0000-0002-1077-7038"},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Bai-Sun Kong","raw_affiliation_strings":["School of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea","institution_ids":["https://openalex.org/I848706"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.9125,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.90655283,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"2517","last_page":"2520"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8502047657966614},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7970141172409058},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6627412438392639},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.4944162368774414},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.4815016984939575},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.47146469354629517},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.46954068541526794},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4630591571331024},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.450792133808136},{"id":"https://openalex.org/keywords/scheme","display_name":"Scheme (mathematics)","score":0.4342961311340332},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.4316873550415039},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3730211853981018},{"id":"https://openalex.org/keywords/real-time-computing","display_name":"Real-time computing","score":0.35473841428756714},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.16064587235450745}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8502047657966614},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7970141172409058},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6627412438392639},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.4944162368774414},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.4815016984939575},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.47146469354629517},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.46954068541526794},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4630591571331024},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.450792133808136},{"id":"https://openalex.org/C77618280","wikidata":"https://www.wikidata.org/wiki/Q1155772","display_name":"Scheme (mathematics)","level":2,"score":0.4342961311340332},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.4316873550415039},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3730211853981018},{"id":"https://openalex.org/C79403827","wikidata":"https://www.wikidata.org/wiki/Q3988","display_name":"Real-time computing","level":1,"score":0.35473841428756714},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.16064587235450745},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2009.5118313","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2009.5118313","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"},{"id":"https://openalex.org/F4320337392","display_name":"Division of Electrical, Communications and Cyber Systems","ror":"https://ror.org/01krpsy48"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1574698890","https://openalex.org/W2068407451","https://openalex.org/W2130286366","https://openalex.org/W2160507761","https://openalex.org/W2205576369","https://openalex.org/W2546379052","https://openalex.org/W4237221223","https://openalex.org/W6634293511","https://openalex.org/W6667700241","https://openalex.org/W6687912964"],"related_works":["https://openalex.org/W2074922484","https://openalex.org/W2130607063","https://openalex.org/W2063061014","https://openalex.org/W2149227206","https://openalex.org/W2473808647","https://openalex.org/W2001316072","https://openalex.org/W3004383742","https://openalex.org/W2105633922","https://openalex.org/W2540867894","https://openalex.org/W3113868537"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"a":[3,42,69],"low-power":[4],"embedded":[5,65,71],"pseudo-SRAM":[6,66],"adopting":[7],"novel":[8],"auto-adjusted":[9],"self-refresh":[10,18,24,53],"control":[11,19],"scheme":[12,20,39],"has":[13],"been":[14],"designed.":[15],"The":[16,38],"proposed":[17],"automatically":[21],"extends":[22],"the":[23,28],"period":[25,54],"by":[26,49],"monitoring":[27],"number":[29],"of":[30,45,56],"failed":[31],"cells":[32],"using":[33],"error":[34],"correction":[35],"code":[36],"(ECC).":[37],"can":[40],"provide":[41],"substantial":[43],"reduction":[44],"data-retention":[46],"power":[47,84],"consumption":[48,85],"choosing":[50],"an":[51],"optimal":[52],"regardless":[55],"process,":[57],"voltage,":[58],"and":[59],"temperature":[60],"(PVT)":[61],"variations.":[62],"A":[63],"4-Mb":[64],"designed":[67],"in":[68],"45-nm":[70],"DRAM":[72],"technology":[73],"providing":[74],"1.1-V":[75],"166-MHz":[76],"random":[77],"cycle":[78],"operation":[79],"achieves":[80],"57-uW":[81],"data":[82],"retention":[83],"at":[86],"room":[87],"temperature.":[88]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":4}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}