{"id":"https://openalex.org/W2171963319","doi":"https://doi.org/10.1109/iscas.2009.5118254","title":"On the design of power-rail esd clamp circuit with consideration of gate leakage current in 65-nm low-voltage CMOS process","display_name":"On the design of power-rail esd clamp circuit with consideration of gate leakage current in 65-nm low-voltage CMOS process","publication_year":2009,"publication_date":"2009-05-01","ids":{"openalex":"https://openalex.org/W2171963319","doi":"https://doi.org/10.1109/iscas.2009.5118254","mag":"2171963319"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2009.5118254","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2009.5118254","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043540734","display_name":"Ming\u2010Dou Ker","orcid":"https://orcid.org/0000-0003-3622-181X"},"institutions":[{"id":"https://openalex.org/I98298690","display_name":"I-Shou University","ror":"https://ror.org/04d7e4m76","country_code":"TW","type":"education","lineage":["https://openalex.org/I98298690"]},{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Ming-Dou Ker","raw_affiliation_strings":["Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan","Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I98298690"]},{"raw_affiliation_string":"Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108249057","display_name":"Po-Yen Chiu","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Po-Yen Chiu","raw_affiliation_strings":["Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109137530","display_name":"Fu-Yi Tsai","orcid":null},"institutions":[{"id":"https://openalex.org/I4210112000","display_name":"Faraday Technology (Taiwan)","ror":"https://ror.org/021wyrx76","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210112000"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Fu-Yi Tsai","raw_affiliation_strings":["Faraday Technology Corporation, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Faraday Technology Corporation, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210112000"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5105618317","display_name":"Yeong-Jar Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210112000","display_name":"Faraday Technology (Taiwan)","ror":"https://ror.org/021wyrx76","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210112000"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yeong-Jar Chang","raw_affiliation_strings":["Faraday Technology Corporation, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Faraday Technology Corporation, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210112000"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5043540734"],"corresponding_institution_ids":["https://openalex.org/I148366613","https://openalex.org/I98298690"],"apc_list":null,"apc_paid":null,"fwci":0.8972,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.78574659,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"2281","last_page":"2284"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12122","display_name":"Physical Unclonable Functions (PUFs) and Hardware Security","score":0.9758999943733215,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.8642853498458862},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7141003012657166},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6707437038421631},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.573699414730072},{"id":"https://openalex.org/keywords/clamper","display_name":"Clamper","score":0.5679330825805664},{"id":"https://openalex.org/keywords/human-body-model","display_name":"Human-body model","score":0.5538079142570496},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5353952050209045},{"id":"https://openalex.org/keywords/clamp","display_name":"Clamp","score":0.45478689670562744},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.44896578788757324},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4186781048774719},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.41525495052337646},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4062078595161438},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.0775141716003418}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.8642853498458862},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7141003012657166},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6707437038421631},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.573699414730072},{"id":"https://openalex.org/C64881904","wikidata":"https://www.wikidata.org/wiki/Q825778","display_name":"Clamper","level":3,"score":0.5679330825805664},{"id":"https://openalex.org/C2781089380","wikidata":"https://www.wikidata.org/wiki/Q5936753","display_name":"Human-body model","level":2,"score":0.5538079142570496},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5353952050209045},{"id":"https://openalex.org/C2776161997","wikidata":"https://www.wikidata.org/wiki/Q846600","display_name":"Clamp","level":3,"score":0.45478689670562744},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.44896578788757324},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4186781048774719},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.41525495052337646},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4062078595161438},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0775141716003418},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C84111939","wikidata":"https://www.wikidata.org/wiki/Q5125465","display_name":"Clamping","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2009.5118254","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2009.5118254","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7900000214576721,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1527488180","https://openalex.org/W2102866901","https://openalex.org/W2125904563","https://openalex.org/W2135978993","https://openalex.org/W2166986753","https://openalex.org/W2546351422","https://openalex.org/W6631707745"],"related_works":["https://openalex.org/W2169305461","https://openalex.org/W2154271946","https://openalex.org/W2133051202","https://openalex.org/W1571396369","https://openalex.org/W4245750910","https://openalex.org/W2153563320","https://openalex.org/W1966802912","https://openalex.org/W2082194675","https://openalex.org/W1964998666","https://openalex.org/W1773794743"],"abstract_inverted_index":{"A":[0],"new":[1,27],"low-leakage":[2],"power-rail":[3],"electrostatic":[4],"discharge":[5],"(ESD)":[6],"clamp":[7],"circuit":[8],"designed":[9],"with":[10],"the":[11,43],"consideration":[12],"of":[13,36,52],"gate-leakage":[14],"issue":[15],"is":[16],"proposed":[17,28],"and":[18,59],"verified":[19],"in":[20,42,56,62],"a":[21,31],"65-nm":[22],"low-voltage":[23],"CMOS":[24],"process.":[25],"The":[26],"design":[29],"has":[30],"very":[32],"small":[33],"leakage":[34],"current":[35],"only":[37],"228":[38],"nA":[39],"at":[40],"25degC":[41],"silicon":[44],"chip.":[45],"Moreover,":[46],"it":[47],"can":[48],"achieve":[49],"ESD":[50,65],"robustness":[51],"over":[53],"8":[54],"kV":[55],"human-body-model":[57],"(HBM)":[58],"750":[60],"V":[61],"machine-model":[63],"(MM)":[64],"tests,":[66],"respectively.":[67]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2013,"cited_by_count":7}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}