{"id":"https://openalex.org/W2108367604","doi":"https://doi.org/10.1109/iscas.2009.5117768","title":"Adiabatic SRAM with a large margin of VT variation by controlling the cell-power-line and word-line voltage","display_name":"Adiabatic SRAM with a large margin of VT variation by controlling the cell-power-line and word-line voltage","publication_year":2009,"publication_date":"2009-05-01","ids":{"openalex":"https://openalex.org/W2108367604","doi":"https://doi.org/10.1109/iscas.2009.5117768","mag":"2108367604"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2009.5117768","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2009.5117768","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://hdl.handle.net/2297/19913","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102841773","display_name":"Shunji Nakata","orcid":"https://orcid.org/0000-0002-4669-340X"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Nakata","raw_affiliation_strings":["Microsystem Integration Laboratories, NTT, Atsugi, Japan","Microsystem Integration Labs., NTT, Atsugi 243-0198, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microsystem Integration Laboratories, NTT, Atsugi, Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"Microsystem Integration Labs., NTT, Atsugi 243-0198, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082984299","display_name":"T. Kusumoto","orcid":null},"institutions":[{"id":"https://openalex.org/I10091056","display_name":"Kanazawa University","ror":"https://ror.org/02hwp6a56","country_code":"JP","type":"education","lineage":["https://openalex.org/I10091056"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Kusumoto","raw_affiliation_strings":["Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa, Japan","Grad. School of Natural Sci. & Tech., Kanazawa University, 920-1192, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa, Japan","institution_ids":["https://openalex.org/I10091056"]},{"raw_affiliation_string":"Grad. School of Natural Sci. & Tech., Kanazawa University, 920-1192, Japan","institution_ids":["https://openalex.org/I10091056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111842012","display_name":"M. Miyama","orcid":null},"institutions":[{"id":"https://openalex.org/I10091056","display_name":"Kanazawa University","ror":"https://ror.org/02hwp6a56","country_code":"JP","type":"education","lineage":["https://openalex.org/I10091056"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Miyama","raw_affiliation_strings":["Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa, Japan","Grad. School of Natural Sci. & Tech., Kanazawa University, 920-1192, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa, Japan","institution_ids":["https://openalex.org/I10091056"]},{"raw_affiliation_string":"Grad. School of Natural Sci. & Tech., Kanazawa University, 920-1192, Japan","institution_ids":["https://openalex.org/I10091056"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101675855","display_name":"Yoshio Matsuda","orcid":"https://orcid.org/0000-0003-0114-0219"},"institutions":[{"id":"https://openalex.org/I10091056","display_name":"Kanazawa University","ror":"https://ror.org/02hwp6a56","country_code":"JP","type":"education","lineage":["https://openalex.org/I10091056"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Matsuda","raw_affiliation_strings":["Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa, Japan","Grad. School of Natural Sci. & Tech., Kanazawa University, 920-1192, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Natural Science & Technology, Kanazawa University, Kanazawa, Japan","institution_ids":["https://openalex.org/I10091056"]},{"raw_affiliation_string":"Grad. School of Natural Sci. & Tech., Kanazawa University, 920-1192, Japan","institution_ids":["https://openalex.org/I10091056"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.9125,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.90781368,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"393","last_page":"396"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/line","display_name":"Line (geometry)","score":0.6330339312553406},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6086621880531311},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5860424041748047},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5804765224456787},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5388739705085754},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.5188528299331665},{"id":"https://openalex.org/keywords/word","display_name":"Word (group theory)","score":0.46766650676727295},{"id":"https://openalex.org/keywords/adiabatic-process","display_name":"Adiabatic process","score":0.4657118618488312},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46285879611968994},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42249882221221924},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3982261121273041},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3427296280860901},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.28979116678237915},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.21570226550102234},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.11416515707969666}],"concepts":[{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.6330339312553406},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6086621880531311},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5860424041748047},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5804765224456787},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5388739705085754},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.5188528299331665},{"id":"https://openalex.org/C90805587","wikidata":"https://www.wikidata.org/wiki/Q10944557","display_name":"Word (group theory)","level":2,"score":0.46766650676727295},{"id":"https://openalex.org/C109663097","wikidata":"https://www.wikidata.org/wiki/Q182453","display_name":"Adiabatic process","level":2,"score":0.4657118618488312},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46285879611968994},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42249882221221924},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3982261121273041},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3427296280860901},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28979116678237915},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21570226550102234},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.11416515707969666},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/iscas.2009.5117768","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2009.5117768","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},{"id":"pmh:oai:kanazawa-u.repo.nii.ac.jp:00009811","is_oa":true,"landing_page_url":"http://hdl.handle.net/2297/19913","pdf_url":null,"source":{"id":"https://openalex.org/S4306400882","display_name":"Kanazawa University Repository for Academic Resources (DSpace) (Kanazawa University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I10091056","host_organization_name":"Kanazawa University","host_organization_lineage":["https://openalex.org/I10091056"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference Paper"}],"best_oa_location":{"id":"pmh:oai:kanazawa-u.repo.nii.ac.jp:00009811","is_oa":true,"landing_page_url":"http://hdl.handle.net/2297/19913","pdf_url":null,"source":{"id":"https://openalex.org/S4306400882","display_name":"Kanazawa University Repository for Academic Resources (DSpace) (Kanazawa University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I10091056","host_organization_name":"Kanazawa University","host_organization_lineage":["https://openalex.org/I10091056"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference Paper"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/4","score":0.8299999833106995,"display_name":"Quality Education"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1549072435","https://openalex.org/W2049077562","https://openalex.org/W2070804761","https://openalex.org/W2132357267","https://openalex.org/W2149956781","https://openalex.org/W2540160302","https://openalex.org/W2738467824","https://openalex.org/W3148792909"],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W1504951709","https://openalex.org/W3202758229","https://openalex.org/W2112776829","https://openalex.org/W4323831463","https://openalex.org/W2372710105","https://openalex.org/W3196829893","https://openalex.org/W1982350366","https://openalex.org/W2550723781","https://openalex.org/W2241423040"],"abstract_inverted_index":{"An":[0],"adiabatic":[1,82],"1-kb":[2],"SRAM":[3],"circuit":[4,156],"was":[5],"designed,":[6],"which":[7],"enables":[8,128],"gradual":[9,130],"charging":[10],"during":[11],"writing":[12,36],"and":[13,26,55,142],"reading":[14,126],"while":[15,88,116],"maintaining":[16],"a":[17,52,71,99,129,152],"large":[18],"VDD":[19],"so":[20,61],"that":[21,62,144],"the":[22,29,35,38,41,59,63,89,106,117,120,134,139],"problems":[23],"of":[24,40,119],"VTvariation":[25],"electromigration":[27,107],"in":[28,70,133],"nanocircuit":[30],"can":[31,76],"be":[32],"resolved.":[33],"In":[34,150],"mode,":[37],"voltage":[39,112],"memory":[42,64,135],"cell":[43,65,140],"power":[44,66],"line":[45,67,92,111],"is":[46,68,93,102,113,146,160],"reduced":[47],"to":[48,95],"ground":[49],"gradually":[50],"using":[51],"high-resistivity":[53],"nMOSFET,":[54],"we":[56,75],"turn":[57],"off":[58],"nMOSFET":[60],"set":[69,94],"high-impedance":[72],"state.":[73],"Then,":[74],"write":[77],"data":[78],"easily":[79],"by":[80],"inputting":[81],"signal":[83],"from":[84],"one":[85],"bit":[86,91,121],"line,":[87],"other":[90],"ground.":[96],"For":[97],"reading,":[98],"verifying":[100],"operation":[101],"proposed":[103],"for":[104],"resolving":[105],"problem.":[108],"The":[109,125],"word":[110],"changed":[114],"stepwise":[115],"voltages":[118],"lines":[122],"are":[123],"verified.":[124],"method":[127],"current":[131],"flow":[132],"cell.":[136],"We":[137],"designed":[138],"layout":[141],"found":[143],"there":[145],"no":[147],"area":[148],"penalty.":[149],"addition,":[151],"new":[153],"charge":[154],"recycle":[155],"with":[157],"tank":[158],"capacitors":[159],"proposed.":[161]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":5},{"year":2014,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}