{"id":"https://openalex.org/W1905972175","doi":"https://doi.org/10.1109/iscas.2006.1693298","title":"A Novel Ternary More, Less and Equality Circuit Using Recharged Semi-Floating Gate Devices","display_name":"A Novel Ternary More, Less and Equality Circuit Using Recharged Semi-Floating Gate Devices","publication_year":2006,"publication_date":"2006-09-22","ids":{"openalex":"https://openalex.org/W1905972175","doi":"https://doi.org/10.1109/iscas.2006.1693298","mag":"1905972175"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2006.1693298","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2006.1693298","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2006 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072687898","display_name":"Henning Gundersen","orcid":null},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":true,"raw_author_name":"H. Gundersen","raw_affiliation_strings":["Department of Informatics, Microelectronic Systems Group, University of Oslo, Oslo, Norway","Microelectron. Syst. Group, Oslo Univ"],"affiliations":[{"raw_affiliation_string":"Department of Informatics, Microelectronic Systems Group, University of Oslo, Oslo, Norway","institution_ids":["https://openalex.org/I184942183"]},{"raw_affiliation_string":"Microelectron. Syst. Group, Oslo Univ","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103258590","display_name":"Yngvar Berg","orcid":"https://orcid.org/0000-0003-4519-995X"},"institutions":[{"id":"https://openalex.org/I184942183","display_name":"University of Oslo","ror":"https://ror.org/01xtthb56","country_code":"NO","type":"education","lineage":["https://openalex.org/I184942183"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"Y. Berg","raw_affiliation_strings":["Department of Informatics, Microelectronic Systems Group, University of Oslo, Oslo, Norway","Microelectron. Syst. Group, Oslo Univ"],"affiliations":[{"raw_affiliation_string":"Department of Informatics, Microelectronic Systems Group, University of Oslo, Oslo, Norway","institution_ids":["https://openalex.org/I184942183"]},{"raw_affiliation_string":"Microelectron. Syst. Group, Oslo Univ","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5072687898"],"corresponding_institution_ids":["https://openalex.org/I184942183"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.05849181,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"3169","last_page":"3172"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ternary-operation","display_name":"Ternary operation","score":0.8025325536727905},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.7278127670288086},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6657353043556213},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.48692357540130615},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.47066935896873474},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45724889636039734},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4405129849910736},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42991361021995544},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4100250005722046},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3636162281036377},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.28827396035194397},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24334415793418884},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13813957571983337},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.10178840160369873}],"concepts":[{"id":"https://openalex.org/C64452783","wikidata":"https://www.wikidata.org/wiki/Q1524945","display_name":"Ternary operation","level":2,"score":0.8025325536727905},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.7278127670288086},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6657353043556213},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.48692357540130615},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.47066935896873474},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45724889636039734},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4405129849910736},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42991361021995544},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4100250005722046},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3636162281036377},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.28827396035194397},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24334415793418884},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13813957571983337},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.10178840160369873},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2006.1693298","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2006.1693298","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2006 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1492542149","https://openalex.org/W1663816628","https://openalex.org/W2113220699","https://openalex.org/W2140077188","https://openalex.org/W2143859419","https://openalex.org/W2160142098","https://openalex.org/W2752061190","https://openalex.org/W4214771512"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W4398198689","https://openalex.org/W2354365353","https://openalex.org/W1988437325","https://openalex.org/W2347585086","https://openalex.org/W2080773395","https://openalex.org/W2099626417","https://openalex.org/W2019514496","https://openalex.org/W2085450379","https://openalex.org/W2354552488"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,21,33,49,59,66,87,103,122],"novel":[4],"ternary":[5,22,25,40,44,54],"more,":[6],"less":[7],"and":[8,24,42],"equality":[9],"(MLE)":[10],"circuit":[11,19,37,57,71,100],"implemented":[12],"with":[13,80,95],"recharged":[14],"semi-floating":[15],"gate":[16],"transistors.":[17],"The":[18,36,56,70,99,108],"is":[20,58,72,111],"application,":[23],"structures":[26],"may":[27],"offer":[28],"the":[29,52],"fastest":[30],"search":[31,67],"in":[32,65],"tree":[34,68],"structure.":[35],"has":[38],"two":[39,53],"inputs,":[41],"one":[43],"output":[45],"which":[46],"will":[47],"be":[48],"comparison":[50],"of":[51],"inputs.":[55],"useful":[60],"building":[61],"block":[62],"for":[63],"use":[64],"application.":[69],"simulated":[73],"by":[74],"using":[75],"Cadencereg":[76],"Analog":[77],"Design":[78],"Environment":[79],"CMOS090":[81],"GP":[82],"process":[83,94],"parameters":[84],"from":[85],"STMicroelectronics,":[86],"90":[88],"nm":[89],"general":[90],"purpose":[91],"bulk":[92],"CMOS":[93],"7":[96],"metal":[97,117,128],"layers.":[98],"operates":[101],"at":[102],"1":[104],"GHz":[105],"clock":[106],"frequency.":[107],"supply":[109],"voltage":[110],"plusmn0.5":[112],"Volt.":[113],"All":[114],"capacitors":[115],"are":[116],"plate":[118],"capacitors,":[119],"based":[120],"on":[121],"vertical":[123],"coupling":[124],"capacitance":[125],"between":[126],"stacked":[127],"plates":[129]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}