{"id":"https://openalex.org/W2160969913","doi":"https://doi.org/10.1109/iscas.2005.1465620","title":"Energy Optimization of Tapered Buffers for CMOS On-Chip Switching Power Converters","display_name":"Energy Optimization of Tapered Buffers for CMOS On-Chip Switching Power Converters","publication_year":2005,"publication_date":"2005-07-27","ids":{"openalex":"https://openalex.org/W2160969913","doi":"https://doi.org/10.1109/iscas.2005.1465620","mag":"2160969913"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2005.1465620","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2005.1465620","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2005 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011083383","display_name":"G. Villar","orcid":null},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"G. Villar","raw_affiliation_strings":["Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033267870","display_name":"Eduard Alarc\u00f3n","orcid":"https://orcid.org/0000-0001-7663-7153"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"E. Alarcon","raw_affiliation_strings":["Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066417700","display_name":"Jordi Madrenas","orcid":"https://orcid.org/0000-0001-5905-9179"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"J. Madrenas","raw_affiliation_strings":["Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038314057","display_name":"F. Guinjoan","orcid":"https://orcid.org/0000-0002-7872-4522"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"F. Guinjoan","raw_affiliation_strings":["Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035669407","display_name":"A. Poveda","orcid":"https://orcid.org/0000-0002-4262-5557"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"A. Poveda","raw_affiliation_strings":["Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Universitat Polilt\u00e8cnica de Catalunya, Barcelona, Spain","institution_ids":["https://openalex.org/I9617848"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.6351,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.93055526,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"4453","last_page":"4456"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6751395463943481},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.6618221402168274},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6564558744430542},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6514330506324768},{"id":"https://openalex.org/keywords/converters","display_name":"Converters","score":0.5990350842475891},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5765873789787292},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5494906902313232},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.5168131589889526},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.516799807548523},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4882388412952423},{"id":"https://openalex.org/keywords/switching-time","display_name":"Switching time","score":0.47646641731262207},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4645516574382782},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45896199345588684},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.36690425872802734},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.296222448348999},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2799801826477051},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11782556772232056}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6751395463943481},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.6618221402168274},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6564558744430542},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6514330506324768},{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.5990350842475891},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5765873789787292},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5494906902313232},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.5168131589889526},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.516799807548523},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4882388412952423},{"id":"https://openalex.org/C199310435","wikidata":"https://www.wikidata.org/wiki/Q7659121","display_name":"Switching time","level":2,"score":0.47646641731262207},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4645516574382782},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45896199345588684},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36690425872802734},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.296222448348999},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2799801826477051},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11782556772232056},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2005.1465620","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2005.1465620","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2005 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.9100000262260437}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1817545098","https://openalex.org/W1970625545","https://openalex.org/W2021389619","https://openalex.org/W2103915487","https://openalex.org/W2112558701","https://openalex.org/W2130324138","https://openalex.org/W2134067926","https://openalex.org/W2142100344","https://openalex.org/W2156668476","https://openalex.org/W2162583770","https://openalex.org/W6638491868"],"related_works":["https://openalex.org/W4386261925","https://openalex.org/W2048420745","https://openalex.org/W2082944690","https://openalex.org/W2263373136","https://openalex.org/W1914349328","https://openalex.org/W1811213809","https://openalex.org/W2160067645","https://openalex.org/W2023334077","https://openalex.org/W2005494397","https://openalex.org/W2104885411"],"abstract_inverted_index":{"This":[0],"work":[1,101],"presents":[2],"a":[3,35,104,108,122],"model":[4],"to":[5,83],"determine":[6],"the":[7,32,40,43,49,62,66,70,74,86,90,95],"power":[8,30,75,96],"consumption":[9],"of":[10,42,59,73,89,119],"tapered":[11,44,91],"buffers,":[12],"validating":[13],"its":[14],"results":[15],"with":[16,94,103],"transistor-level":[17],"simulations.":[18,60],"Focusing":[19],"on":[20],"their":[21],"application":[22],"as":[23],"gate":[24],"drivers":[25],"for":[26,34,107,121],"high-frequency":[27],"on-chip":[28],"switching":[29,71,87,98],"converters,":[31],"need":[33],"fall-rise":[36,51,67],"time":[37,52,68],"evaluation":[38],"at":[39],"output":[41,50],"buffer":[45,92],"is":[46,53,81],"discussed.":[47],"Consequently,":[48],"modeled":[54],"and":[55,69],"validated":[56],"by":[57],"means":[58],"Given":[61],"linear":[63],"relation":[64],"between":[65],"losses":[72,88],"MOSFET,":[76],"an":[77,115],"optimized":[78],"design":[79,105],"procedure":[80],"proposed":[82],"concurrently":[84],"minimize":[85],"together":[93],"MOSFET":[97],"losses.":[99],"The":[100],"concludes":[102],"example":[106],"15000":[109],"/spl":[110,125],"mu/m-width":[111],"PMOS":[112],"transistor,":[113],"presenting":[114],"optimum":[116],"tapering":[117],"factor":[118],"21,":[120],"specific":[123],"0.35":[124],"mu/m":[126],"standard":[127],"CMOS":[128],"technology.":[129]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":3}],"updated_date":"2026-06-19T17:40:00.097472","created_date":"2025-10-10T00:00:00"}