{"id":"https://openalex.org/W2156668591","doi":"https://doi.org/10.1109/iscas.2005.1465177","title":"20dBm CMOS Class AB Power Amplifier Design for Low Cost 2GHz-2.45GHz Consumer Applications in a 0.13um Technology","display_name":"20dBm CMOS Class AB Power Amplifier Design for Low Cost 2GHz-2.45GHz Consumer Applications in a 0.13um Technology","publication_year":2005,"publication_date":"2005-07-27","ids":{"openalex":"https://openalex.org/W2156668591","doi":"https://doi.org/10.1109/iscas.2005.1465177","mag":"2156668591"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2005.1465177","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2005.1465177","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2005 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5046818962","display_name":"V. Knopik","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"V. Knopik","raw_affiliation_strings":["STMicroelectronics, Central Research Center, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central Research Center, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013607388","display_name":"Baudouin Martineau","orcid":"https://orcid.org/0000-0002-5201-8523"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"B. Martineau","raw_affiliation_strings":["STMicroelectronics, Central Research Center, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central Research Center, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108092427","display_name":"Didier Belot","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"D. Belot","raw_affiliation_strings":["STMicroelectronics, Central Research Center, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central Research Center, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5046818962"],"corresponding_institution_ids":["https://openalex.org/I4210104693"],"apc_list":null,"apc_paid":null,"fwci":1.067,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.80240752,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"2675","last_page":"2678"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.994700014591217,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.77945876121521},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7135793566703796},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5829397439956665},{"id":"https://openalex.org/keywords/dbm","display_name":"dBm","score":0.5398603677749634},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4921545386314392},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.4537901282310486},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4389967918395996},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.41255372762680054},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38346022367477417},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.32420867681503296},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.20616325736045837},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15069159865379333}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.77945876121521},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7135793566703796},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5829397439956665},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.5398603677749634},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4921545386314392},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.4537901282310486},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4389967918395996},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.41255372762680054},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38346022367477417},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32420867681503296},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20616325736045837},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15069159865379333},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2005.1465177","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2005.1465177","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2005 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8700000047683716,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1526001157","https://openalex.org/W1554155546","https://openalex.org/W1569638374","https://openalex.org/W2111662330","https://openalex.org/W2147019148","https://openalex.org/W2159147660","https://openalex.org/W6633489511","https://openalex.org/W6676715186","https://openalex.org/W6683606861"],"related_works":["https://openalex.org/W3044591057","https://openalex.org/W2174353780","https://openalex.org/W2467369358","https://openalex.org/W1767564298","https://openalex.org/W2171910655","https://openalex.org/W2043901354","https://openalex.org/W1492237477","https://openalex.org/W2050898899","https://openalex.org/W2070694218","https://openalex.org/W2532822217"],"abstract_inverted_index":{"The":[0,20,56,91,108],"paper":[1],"presents":[2,29],"a":[3,83],"medium":[4],"power":[5,81,109],"amplifier":[6],"(PA)":[7],"design":[8,21],"for":[9],"2.4":[10],"GHz":[11],"applications":[12],"in":[13,41,67,96],"pure":[14],"0.13":[15,97],"/spl":[16,98],"mu/m":[17,99],"CMOS":[18,106],"technology.":[19,107],"has":[22,93],"been":[23,94],"done":[24],"with":[25,82],"reliability":[26],"concern":[27],"and":[28,45,102],"high":[30],"current":[31,40],"layout":[32],"considerations.":[33],"It":[34,70],"consists":[35],"of":[36,61],"evaluating":[37],"the":[38,42,47,53,78],"maximum":[39,79],"access":[43],"lines":[44],"sizing":[46],"devices":[48],"as":[49],"well,":[50],"without":[51],"degrading":[52],"overall":[54],"performance.":[55],"front":[57],"end":[58],"is":[59],"composed":[60],"two":[62],"stages":[63],"using":[64],"several":[65],"transistors":[66],"cascade":[68],"configuration.":[69],"can":[71],"deliver":[72],"at":[73,77],"least":[74],"20":[75],"dBm":[76],"output":[80],"measured":[84],"compression":[85],"point":[86],"better":[87],"than":[88],"16":[89],"dBm.":[90],"chip":[92],"integrated":[95],"1.2":[100],"V":[101,104],"2.5":[103,115],"STMicroelectronics":[105],"stage":[110],"consumes":[111],"220":[112],"mA":[113],"under":[114],"V.":[116]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2015,"cited_by_count":4}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}