{"id":"https://openalex.org/W2121507242","doi":"https://doi.org/10.1109/iscas.2005.1464970","title":"A 1.2V Multi Gb/s/pin Memory Interface Circuits with High Linearity and Low Mismatch","display_name":"A 1.2V Multi Gb/s/pin Memory Interface Circuits with High Linearity and Low Mismatch","publication_year":2005,"publication_date":"2005-07-27","ids":{"openalex":"https://openalex.org/W2121507242","doi":"https://doi.org/10.1109/iscas.2005.1464970","mag":"2121507242"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2005.1464970","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2005.1464970","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2005 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101715800","display_name":"Tae-Hyoung Kim","orcid":"https://orcid.org/0000-0003-2416-9305"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Tae-Hyoung Kim","raw_affiliation_strings":["SRAM Design, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Memory Div., Samsung Electron., Kyeonggi-Do, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SRAM Design, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyeonggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110232432","display_name":"Uk-Rae Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Uk-Rae Cho","raw_affiliation_strings":["SRAM Design, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Memory Div., Samsung Electron., Kyeonggi-Do, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SRAM Design, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyeonggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077048613","display_name":"Hyun-Geun Byun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun-Geun Byun","raw_affiliation_strings":["SRAM Design, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Memory Div., Samsung Electron., Kyeonggi-Do, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SRAM Design, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyeonggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.28052601,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"38","issue":null,"first_page":"1847","last_page":"1850"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.7489323019981384},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6369661688804626},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5526583194732666},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.547883152961731},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5205434560775757},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.4975111782550812},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4673125445842743},{"id":"https://openalex.org/keywords/compensation","display_name":"Compensation (psychology)","score":0.4267585277557373},{"id":"https://openalex.org/keywords/output-impedance","display_name":"Output impedance","score":0.41316935420036316},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3118319511413574},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20185577869415283},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.13334810733795166}],"concepts":[{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.7489323019981384},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6369661688804626},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5526583194732666},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.547883152961731},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5205434560775757},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.4975111782550812},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4673125445842743},{"id":"https://openalex.org/C2780023022","wikidata":"https://www.wikidata.org/wiki/Q1338171","display_name":"Compensation (psychology)","level":2,"score":0.4267585277557373},{"id":"https://openalex.org/C58112919","wikidata":"https://www.wikidata.org/wiki/Q631203","display_name":"Output impedance","level":3,"score":0.41316935420036316},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3118319511413574},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20185577869415283},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.13334810733795166},{"id":"https://openalex.org/C11171543","wikidata":"https://www.wikidata.org/wiki/Q41630","display_name":"Psychoanalysis","level":1,"score":0.0},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2005.1464970","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2005.1464970","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2005 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6600000262260437,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1556480701","https://openalex.org/W1580581276","https://openalex.org/W1602708344","https://openalex.org/W1984383032","https://openalex.org/W2020208389","https://openalex.org/W2095008732","https://openalex.org/W6634700998","https://openalex.org/W6674060004"],"related_works":["https://openalex.org/W2113057816","https://openalex.org/W4297786912","https://openalex.org/W2572422521","https://openalex.org/W2356432821","https://openalex.org/W2155567692","https://openalex.org/W2026961927","https://openalex.org/W2328841837","https://openalex.org/W2135402579","https://openalex.org/W4386577649","https://openalex.org/W2020934979"],"abstract_inverted_index":{"This":[0],"paper":[1],"describes":[2],"memory":[3],"interface":[4],"circuits":[5,108],"applicable":[6],"to":[7,86],"multi":[8],"Gbit/s/pin":[9],"chip-to-chip":[10],"communication.":[11],"To":[12],"obtain":[13],"the":[14,19,24,38,88,92],"high":[15],"linearity":[16,35],"characteristics":[17],"of":[18,37,91],"off-chip":[20],"drivers":[21],"(OCD)":[22],"and":[23,41,45,52,56,71],"on-die":[25],"terminators":[26],"(ODT),":[27],"a":[28,64],"novel":[29],"circuit":[30],"structure":[31],"is":[32,43,60,74,84,99],"proposed.":[33],"The":[34,54,68,95,106],"error":[36],"designed":[39,85],"OCD":[40],"ODT":[42],"4.7%":[44],"1.7%":[46],"respectively":[47],"when":[48],"measured":[49],"between":[50],"0.2V":[51],"1V.":[53],"pull-up":[55,70],"pull-down":[57],"impedance":[58,66,78],"mismatch":[59,73],"reduced":[61],"by":[62],"adding":[63],"compensation":[65],"unit.":[67],"maximum":[69],"pulldown":[72],"0.5":[75],"bit.":[76],"An":[77],"update":[79],"scheme":[80],"without":[81],"training":[82],"sequence":[83],"guarantee":[87],"signal":[89],"integrity":[90],"first":[93],"data.":[94],"valid":[96],"data":[97],"window":[98],"418ps":[100],"at":[101],"2Gbit/s,":[102],"Vref":[103],"/spl":[104],"plusmn/150mV.":[105],"proposed":[107],"are":[109],"fabricated":[110],"with":[111],"0.1/spl":[112],"mu/m":[113],"dual-oxide":[114],"CMOS":[115],"process":[116],"technology.":[117]},"counts_by_year":[{"year":2012,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}