{"id":"https://openalex.org/W1939542144","doi":"https://doi.org/10.1109/iscas.2005.1464808","title":"A New Pre-Driver Design for Improving the ESD Performance of the High Voltage Tolerant I/O","display_name":"A New Pre-Driver Design for Improving the ESD Performance of the High Voltage Tolerant I/O","publication_year":2005,"publication_date":"2005-07-27","ids":{"openalex":"https://openalex.org/W1939542144","doi":"https://doi.org/10.1109/iscas.2005.1464808","mag":"1939542144"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2005.1464808","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2005.1464808","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2005 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009826380","display_name":"J.H. Lee","orcid":"https://orcid.org/0009-0003-3447-0190"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"J.H. Lee","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Limited, Taiwan","Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Limited, Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109228494","display_name":"J.R. Shih","orcid":"https://orcid.org/0009-0009-4954-7561"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"J.R. Shih","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Limited, Taiwan","Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Limited, Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053674727","display_name":"Markus Wu","orcid":"https://orcid.org/0000-0002-1885-3250"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y.H. Wu","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Limited, Taiwan","Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Limited, Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020121014","display_name":"K.F. Yu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"K.F. Yu","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Limited, Taiwan","Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Limited, Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111429425","display_name":"T.C. Ong","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"T.C. Ong","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Limited, Taiwan","Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Limited, Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.09378219,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1198","last_page":"1201"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.775918185710907},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.6598910093307495},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.637528121471405},{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.5480173826217651},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4826086759567261},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4509177505970001},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.42644965648651123},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4140041172504425},{"id":"https://openalex.org/keywords/root-cause","display_name":"Root cause","score":0.41240328550338745},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.34943321347236633},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3288215100765228},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3262247145175934},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.32317396998405457},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.1589374840259552}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.775918185710907},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.6598910093307495},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.637528121471405},{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.5480173826217651},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4826086759567261},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4509177505970001},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.42644965648651123},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4140041172504425},{"id":"https://openalex.org/C84945661","wikidata":"https://www.wikidata.org/wiki/Q7366567","display_name":"Root cause","level":2,"score":0.41240328550338745},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.34943321347236633},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3288215100765228},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3262247145175934},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.32317396998405457},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.1589374840259552}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2005.1464808","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2005.1464808","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2005 IEEE International Symposium on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7200000286102295,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2992364380","https://openalex.org/W3038876531","https://openalex.org/W2401021868","https://openalex.org/W2917072698","https://openalex.org/W2150404448","https://openalex.org/W2521656715","https://openalex.org/W2101797444","https://openalex.org/W2379197520","https://openalex.org/W1538952391","https://openalex.org/W2046361070"],"abstract_inverted_index":{"The":[0,81],"gate":[1,57,61],"voltage-induced":[2],"current":[3],"crowding":[4],"(GVICC)":[5],"effect":[6],"(Lee,":[7],"J.H.,":[8],"et":[9],"al.,":[10],"IRPS":[11],"Proc.,":[12],"p.269-76,":[13],"2003)":[14],"has":[15],"been":[16],"found":[17],"to":[18,49,66,76,99],"be":[19],"the":[20,24,27,52,55,59,63,78,87,91],"root":[21],"cause":[22],"of":[23,26,54,62,90],"failure":[25],"high":[28],"voltage":[29],"tolerant":[30],"I/O":[31,95],"(HVT":[32],"I/O)":[33],"at":[34],"a":[35,43],"low-voltage":[36],"ESD":[37,71,88,104],"event.":[38],"Based":[39],"on":[40],"this":[41],"finding,":[42],"new":[44,82],"pre-driver":[45,83],"design":[46,84],"is":[47],"proposed":[48],"pull":[50],"down":[51],"voltages":[53],"top":[56],"and":[58],"bottom":[60],"cascode":[64],"NMOS":[65],"0":[67],"V":[68,98],"during":[69,102],"an":[70],"zapping":[72],"event":[73],"in":[74],"order":[75],"eliminate":[77],"GVICC":[79],"effect.":[80],"can":[85],"improve":[86],"performance":[89],"fully":[92],"silicided":[93],"HVT":[94],"from":[96],"500":[97],"5":[100],"kV":[101],"HBM":[103],"zapping.":[105]},"counts_by_year":[{"year":2012,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}