{"id":"https://openalex.org/W1570504155","doi":"https://doi.org/10.1109/iscas.2004.1328339","title":"A poor man's BiCMOS using standard CMOS","display_name":"A poor man's BiCMOS using standard CMOS","publication_year":2004,"publication_date":"2004-09-07","ids":{"openalex":"https://openalex.org/W1570504155","doi":"https://doi.org/10.1109/iscas.2004.1328339","mag":"1570504155"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2004.1328339","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2004.1328339","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004863267","display_name":"Farzan Rezaei","orcid":"https://orcid.org/0000-0002-3791-926X"},"institutions":[{"id":"https://openalex.org/I185261750","display_name":"University of Toronto","ror":"https://ror.org/03dbr7087","country_code":"CA","type":"education","lineage":["https://openalex.org/I185261750"]}],"countries":["CA"],"is_corresponding":true,"raw_author_name":"F. Rezaei","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONT, Canada","Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada#TAB#"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONT, Canada","institution_ids":["https://openalex.org/I185261750"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada#TAB#","institution_ids":["https://openalex.org/I185261750"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085613367","display_name":"Kenneth W. Martin","orcid":"https://orcid.org/0000-0002-3265-0206"},"institutions":[{"id":"https://openalex.org/I185261750","display_name":"University of Toronto","ror":"https://ror.org/03dbr7087","country_code":"CA","type":"education","lineage":["https://openalex.org/I185261750"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"K. Martin","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONT, Canada","Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada#TAB#"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Toronto, Toronto, ONT, Canada","institution_ids":["https://openalex.org/I185261750"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada#TAB#","institution_ids":["https://openalex.org/I185261750"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5004863267"],"corresponding_institution_ids":["https://openalex.org/I185261750"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0591589,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"I","last_page":"893"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.817289412021637},{"id":"https://openalex.org/keywords/preamplifier","display_name":"Preamplifier","score":0.7715284824371338},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.6400513648986816},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6076542735099792},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6002867221832275},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5776759386062622},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5632243156433105},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5017914772033691},{"id":"https://openalex.org/keywords/common-emitter","display_name":"Common emitter","score":0.4580371379852295},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.42547935247421265},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.38921093940734863},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3819536864757538}],"concepts":[{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.817289412021637},{"id":"https://openalex.org/C14245642","wikidata":"https://www.wikidata.org/wiki/Q399804","display_name":"Preamplifier","level":4,"score":0.7715284824371338},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.6400513648986816},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6076542735099792},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6002867221832275},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5776759386062622},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5632243156433105},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5017914772033691},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.4580371379852295},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.42547935247421265},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38921093940734863},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3819536864757538}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2004.1328339","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2004.1328339","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W637562634","https://openalex.org/W1593885455","https://openalex.org/W1594101521","https://openalex.org/W1651707596","https://openalex.org/W1998284495","https://openalex.org/W2116099132","https://openalex.org/W2153789714","https://openalex.org/W2809755056","https://openalex.org/W6620669184","https://openalex.org/W6752584306"],"related_works":["https://openalex.org/W2185874911","https://openalex.org/W1485418874","https://openalex.org/W1919724461","https://openalex.org/W2184349518","https://openalex.org/W2025633334","https://openalex.org/W2043970876","https://openalex.org/W2495262935","https://openalex.org/W1981729447","https://openalex.org/W2069256397","https://openalex.org/W1978929727"],"abstract_inverted_index":{"This":[0],"paper":[1],"describes":[2],"the":[3,29,87,110,126,130,140],"realization":[4],"of":[5,28,39,112,132],"isolated":[6],"vertical":[7,144],"npn":[8,145],"transistors":[9,20,47],"in":[10,146],"generic":[11],"CMOS":[12],"technologies.":[13],"An":[14],"improved":[15],"layout":[16],"for":[17,142,155],"these":[18,45],"parasitic":[19],"is":[21],"proposed.":[22],"The":[23,34,51,75,84,96,105],"electrical":[24],"characteristics":[25,101],"and":[26,37,80,86,93,99,125],"modelling":[27],"proposed":[30],"device":[31],"are":[32,48,91,102,114,134,153],"presented.":[33,50],"design,":[35],"realization,":[36],"fabrication":[38],"a":[40,81,143,147],"high-speed":[41],"open-loop":[42],"preamplifier":[43,52],"using":[44,72],"bipolar":[46],"also":[49],"was":[53,70],"found":[54],"to":[55],"have":[56],"more":[57],"than":[58,66,116,137],"1":[59],"GHz":[60],"bandwidth":[61],"as":[62,64,69],"well":[63],"less":[65,115,136],"-35dB":[67],"THD,":[68],"verified":[71],"die-probe":[73],"measurements.":[74],"amplifier":[76],"achieved":[77],"10.4dB":[78],"gain":[79],"-9dBm":[82],"IIP3.":[83],"collector-base":[85],"collector-emitter":[88],"breakdown":[89],"voltages":[90],"14.8V":[92],"9V,":[94],"respectively.":[95],"output":[97],"impedance":[98],"noise":[100],"comparatively":[103],"good.":[104],"measured":[106],"current":[107],"gains,":[108],"on":[109,129],"order":[111,131],"20,":[113],"what":[117],"would":[118,138],"be":[119,139],"preferred,":[120],"but":[121,151],"not":[122],"excessively":[123],"so,":[124],"unity-gain":[127],"frequencies":[128],"4GHz,":[133],"much":[135],"case":[141],"typical":[148],"BiCMOS":[149],"process,":[150],"still":[152],"adequate":[154],"many":[156],"applications.":[157]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}