{"id":"https://openalex.org/W1611582784","doi":"https://doi.org/10.1109/iscas.2004.1328272","title":"An integrated linear RF power detector","display_name":"An integrated linear RF power detector","publication_year":2004,"publication_date":"2004-09-07","ids":{"openalex":"https://openalex.org/W1611582784","doi":"https://doi.org/10.1109/iscas.2004.1328272","mag":"1611582784"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2004.1328272","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2004.1328272","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5024370382","display_name":"S. Kulhalli","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Suhas Kulhalli","raw_affiliation_strings":["Texas Instruments, Inc., USA","Texas Instruments Inc, USA"],"affiliations":[{"raw_affiliation_string":"Texas Instruments, Inc., USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"Texas Instruments Inc, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072459071","display_name":"Sumantra Seth","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sumantra Seth","raw_affiliation_strings":["Texas Instruments, Inc., USA","Texas Instruments Inc, USA"],"affiliations":[{"raw_affiliation_string":"Texas Instruments, Inc., USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"Texas Instruments Inc, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111471808","display_name":"S.-T. Fu","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shih-Tsang Fu","raw_affiliation_strings":["Texas Instruments, Inc., USA","Texas Instruments Inc, USA"],"affiliations":[{"raw_affiliation_string":"Texas Instruments, Inc., USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"Texas Instruments Inc, USA","institution_ids":["https://openalex.org/I74760111"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5024370382"],"corresponding_institution_ids":["https://openalex.org/I74760111"],"apc_list":null,"apc_paid":null,"fwci":1.3166,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.79474802,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"4","issue":null,"first_page":"I","last_page":"625"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9699000120162964,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9564999938011169,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.8803347945213318},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.702648401260376},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.6480862498283386},{"id":"https://openalex.org/keywords/dynamic-range","display_name":"Dynamic range","score":0.644555926322937},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.5828920006752014},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5553023815155029},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5253055691719055},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4934472143650055},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.4929463863372803},{"id":"https://openalex.org/keywords/wireless","display_name":"Wireless","score":0.4432523250579834},{"id":"https://openalex.org/keywords/replica","display_name":"Replica","score":0.43499118089675903},{"id":"https://openalex.org/keywords/high-dynamic-range","display_name":"High dynamic range","score":0.41168034076690674},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.36213234066963196},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.34538209438323975},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.34486693143844604},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.20886200666427612},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1342381238937378},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.1223326325416565},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.06660240888595581}],"concepts":[{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.8803347945213318},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.702648401260376},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.6480862498283386},{"id":"https://openalex.org/C87133666","wikidata":"https://www.wikidata.org/wiki/Q1161699","display_name":"Dynamic range","level":2,"score":0.644555926322937},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.5828920006752014},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5553023815155029},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5253055691719055},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4934472143650055},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.4929463863372803},{"id":"https://openalex.org/C555944384","wikidata":"https://www.wikidata.org/wiki/Q249","display_name":"Wireless","level":2,"score":0.4432523250579834},{"id":"https://openalex.org/C2775937380","wikidata":"https://www.wikidata.org/wiki/Q1232589","display_name":"Replica","level":2,"score":0.43499118089675903},{"id":"https://openalex.org/C2780056265","wikidata":"https://www.wikidata.org/wiki/Q106239881","display_name":"High dynamic range","level":3,"score":0.41168034076690674},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.36213234066963196},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.34538209438323975},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.34486693143844604},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.20886200666427612},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1342381238937378},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.1223326325416565},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06660240888595581},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2004.1328272","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2004.1328272","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8799999952316284,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1986345659","https://openalex.org/W2085467474","https://openalex.org/W2106514674","https://openalex.org/W2138495485","https://openalex.org/W2168136192","https://openalex.org/W2275077172","https://openalex.org/W6680540201"],"related_works":["https://openalex.org/W2884377208","https://openalex.org/W2525745698","https://openalex.org/W2010724756","https://openalex.org/W2152030049","https://openalex.org/W2564543331","https://openalex.org/W2410869481","https://openalex.org/W2466475649","https://openalex.org/W2371190228","https://openalex.org/W1967888462","https://openalex.org/W4224781608"],"abstract_inverted_index":{"An":[0],"integrated":[1],"RF":[2],"power":[3,64],"detector":[4,12,41,71],"used":[5],"in":[6,23,29,58,66,77],"wireless":[7],"communication":[8],"is":[9,56,81],"presented.":[10],"The":[11,40,70],"uses":[13],"a":[14,30,36,67,90],"unique":[15],"replica":[16],"circuitry":[17],"to":[18,74],"compensate":[19],"for":[20],"any":[21],"changes":[22],"process":[24],"or":[25],"temperature.":[26],"This":[27],"results":[28],"high":[31],"degree":[32],"of":[33,47,89],"accuracy":[34,54],"and":[35,55,94],"higher":[37],"dynamic":[38,48],"range.":[39],"has":[42],"more":[43],"than":[44,97],"25":[45],"dB":[46,53],"range":[49],"within":[50],"+/-":[51],"0.5":[52],"placed":[57],"the":[59,63],"die":[60],"along":[61],"with":[62],"amplifier":[65],"BiCMOS":[68],"process.":[69],"runs":[72,88],"up":[73],"7":[75],"GHz":[76,85],"simulation,":[78],"though":[79],"it":[80],"tested":[82],"at":[83],"2.4":[84],"here.":[86],"It":[87],"3":[91],"V":[92],"supply":[93],"consumes":[95],"less":[96],"5":[98],"mA.":[99]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}