{"id":"https://openalex.org/W2129973862","doi":"https://doi.org/10.1109/iscas.2003.1206296","title":"An SOI 4 transistors self-refresh ultra-low-voltage memory cell","display_name":"An SOI 4 transistors self-refresh ultra-low-voltage memory cell","publication_year":2003,"publication_date":"2003-11-04","ids":{"openalex":"https://openalex.org/W2129973862","doi":"https://doi.org/10.1109/iscas.2003.1206296","mag":"2129973862"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2003.1206296","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2003.1206296","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03.","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069473217","display_name":"Olivier Thomas","orcid":"https://orcid.org/0000-0001-7240-5259"},"institutions":[{"id":"https://openalex.org/I122941322","display_name":"Institut Sup\u00e9rieur d'\u00c9lectronique de Paris","ror":"https://ror.org/00yw34h52","country_code":"FR","type":"education","lineage":["https://openalex.org/I122941322"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"O. Thomas","raw_affiliation_strings":["ISEP, Paris, France","[ISEP, Paris, France]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ISEP, Paris, France","institution_ids":["https://openalex.org/I122941322"]},{"raw_affiliation_string":"[ISEP, Paris, France]","institution_ids":["https://openalex.org/I122941322"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085302899","display_name":"Ayed Ben Amara","orcid":"https://orcid.org/0000-0002-8673-1722"},"institutions":[{"id":"https://openalex.org/I122941322","display_name":"Institut Sup\u00e9rieur d'\u00c9lectronique de Paris","ror":"https://ror.org/00yw34h52","country_code":"FR","type":"education","lineage":["https://openalex.org/I122941322"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Amara","raw_affiliation_strings":["ISEP, Paris, France","[ISEP, Paris, France]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ISEP, Paris, France","institution_ids":["https://openalex.org/I122941322"]},{"raw_affiliation_string":"[ISEP, Paris, France]","institution_ids":["https://openalex.org/I122941322"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I122941322"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"5","issue":null,"first_page":"V","last_page":"401"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.821439802646637},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7371256351470947},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.6252400875091553},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.569892406463623},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4907134771347046},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4810081422328949},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.4745122790336609},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.4662223160266876},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.461945116519928},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44690579175949097},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4080606698989868},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.40633919835090637},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3695279359817505},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3207317590713501},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18776193261146545},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.15309900045394897},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1470416784286499},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.14221033453941345}],"concepts":[{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.821439802646637},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7371256351470947},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.6252400875091553},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.569892406463623},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4907134771347046},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4810081422328949},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.4745122790336609},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.4662223160266876},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.461945116519928},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44690579175949097},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4080606698989868},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.40633919835090637},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3695279359817505},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3207317590713501},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18776193261146545},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.15309900045394897},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1470416784286499},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.14221033453941345},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2003.1206296","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2003.1206296","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03.","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8500000238418579}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W655154850","https://openalex.org/W1565517300","https://openalex.org/W1904610429","https://openalex.org/W1907234825","https://openalex.org/W2014337083","https://openalex.org/W2048810489","https://openalex.org/W2078755136","https://openalex.org/W2118573913","https://openalex.org/W2122435992","https://openalex.org/W2160509435","https://openalex.org/W2166120941","https://openalex.org/W4250370067","https://openalex.org/W6621750449","https://openalex.org/W6633675174","https://openalex.org/W6639724981","https://openalex.org/W6653919109"],"related_works":["https://openalex.org/W2009852498","https://openalex.org/W3004587385","https://openalex.org/W1991521745","https://openalex.org/W2109147260","https://openalex.org/W2786811717","https://openalex.org/W4220771873","https://openalex.org/W2069364674","https://openalex.org/W2062767191","https://openalex.org/W2117738807","https://openalex.org/W2000425643"],"abstract_inverted_index":{"Analog":[0],"and":[1,60,72],"digital":[2],"subthreshold":[3,39],"circuit":[4],"design":[5],"have":[6],"been":[7],"investigated":[8],"recently":[9],"in":[10,37],"some":[11],"niche":[12],"applications":[13],"where":[14],"performance":[15,78],"is":[16,22],"of":[17,55],"secondary":[18],"concern":[19],"but":[20],"ultra-low-power":[21],"needed.":[23],"In":[24],"this":[25],"paper":[26],"we":[27],"propose":[28],"a":[29,44,52,68,80],"new":[30],"four":[31],"transistors":[32],"self-refresh":[33],"memory":[34,65],"cell":[35,57,66],"operating":[36],"the":[38,56],"region.":[40],"Our":[41],"simulations":[42],"using":[43],"partially":[45],"depleted":[46],"SOI":[47],"0.25/spl":[48],"mu/m":[49],"technology":[50],"show":[51],"good":[53,77],"stability":[54],"to":[58,76],"process":[59],"temperature":[61],"variations.":[62],"Combining":[63],"our":[64],"with":[67],"current":[69],"sensing":[70],"scheme":[71],"grounded":[73],"bit-lines":[74],"leads":[75],"despite":[79],"very":[81],"low":[82],"supply":[83],"voltage.":[84]},"counts_by_year":[{"year":2014,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}