{"id":"https://openalex.org/W1863731676","doi":"https://doi.org/10.1109/iscas.2003.1205594","title":"SiGe HBT power amplifier for IS-95 CDMA using a novel process, voltage, and temperature insensitive biasing scheme","display_name":"SiGe HBT power amplifier for IS-95 CDMA using a novel process, voltage, and temperature insensitive biasing scheme","publication_year":2003,"publication_date":"2003-10-31","ids":{"openalex":"https://openalex.org/W1863731676","doi":"https://doi.org/10.1109/iscas.2003.1205594","mag":"1863731676"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2003.1205594","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2003.1205594","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03.","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5035644530","display_name":"Nuttapong Srirattana","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"N. Srirattana","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065266066","display_name":"M.S. Qureshi","orcid":"https://orcid.org/0000-0002-6609-5642"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M.S. Qureshi","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021323186","display_name":"Arlo Aude","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Aude","raw_affiliation_strings":["National Semiconductor Corporation, Norcross, GA, USA","[National Semiconductor Corporation, Norcross, GA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Semiconductor Corporation, Norcross, GA, USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"[National Semiconductor Corporation, Norcross, GA, USA]","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007829426","display_name":"V. Krishnamurthy","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"V. Krishnamurthy","raw_affiliation_strings":["National Semiconductor Corporation, Norcross, GA, USA","[National Semiconductor Corporation, Norcross, GA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Semiconductor Corporation, Norcross, GA, USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"[National Semiconductor Corporation, Norcross, GA, USA]","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086461408","display_name":"Deukhyoun Heo","orcid":"https://orcid.org/0000-0002-1152-1739"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Heo","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","[School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"[School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA]","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114000281","display_name":"P.E. Allen","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P.E. Allen","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","[School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"[School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA]","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113050985","display_name":"J. Laskar","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Laskar","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","[School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"[School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA]","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"1","issue":null,"first_page":"I","last_page":"437"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6830803751945496},{"id":"https://openalex.org/keywords/power-supply-rejection-ratio","display_name":"Power supply rejection ratio","score":0.6509380340576172},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.5544617176055908},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5189806818962097},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.5169419646263123},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.4923900365829468},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.45297709107398987},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.45266470313072205},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4521995186805725},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4358534514904022},{"id":"https://openalex.org/keywords/linear-amplifier","display_name":"Linear amplifier","score":0.4316726326942444},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.412739098072052},{"id":"https://openalex.org/keywords/switched-mode-power-supply","display_name":"Switched-mode power supply","score":0.33879607915878296},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.28975385427474976},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24576938152313232},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20159316062927246},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.16500982642173767},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.082369863986969}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6830803751945496},{"id":"https://openalex.org/C15892472","wikidata":"https://www.wikidata.org/wiki/Q1482413","display_name":"Power supply rejection ratio","level":4,"score":0.6509380340576172},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.5544617176055908},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5189806818962097},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.5169419646263123},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.4923900365829468},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.45297709107398987},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.45266470313072205},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4521995186805725},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4358534514904022},{"id":"https://openalex.org/C71041172","wikidata":"https://www.wikidata.org/wiki/Q6553412","display_name":"Linear amplifier","level":5,"score":0.4316726326942444},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.412739098072052},{"id":"https://openalex.org/C151799858","wikidata":"https://www.wikidata.org/wiki/Q587008","display_name":"Switched-mode power supply","level":3,"score":0.33879607915878296},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.28975385427474976},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24576938152313232},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20159316062927246},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.16500982642173767},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.082369863986969},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2003.1205594","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2003.1205594","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03.","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1608180155","https://openalex.org/W1862800947","https://openalex.org/W2062254317","https://openalex.org/W2098904454","https://openalex.org/W2101172792","https://openalex.org/W2140823559","https://openalex.org/W2142382920","https://openalex.org/W2147891549","https://openalex.org/W2166982739","https://openalex.org/W2169675582","https://openalex.org/W2183546248","https://openalex.org/W2242992438","https://openalex.org/W6636487449","https://openalex.org/W6682091745","https://openalex.org/W6684487652"],"related_works":["https://openalex.org/W2355154599","https://openalex.org/W2091782502","https://openalex.org/W2380109908","https://openalex.org/W2132322905","https://openalex.org/W2357901411","https://openalex.org/W2123152360","https://openalex.org/W2343360968","https://openalex.org/W1973572237","https://openalex.org/W2048549763","https://openalex.org/W2361713790"],"abstract_inverted_index":{"A":[0],"novel":[1],"bias":[2],"current":[3,15],"circuitry":[4],"for":[5,32,70],"SiGe":[6],"HBT":[7],"power":[8,56,67,77,94],"amplifier":[9,68,95],"which":[10],"achieves":[11],"highly":[12],"predictable":[13],"stable":[14,101],"under":[16,35,103],"process,":[17,104],"voltage,":[18,106],"and":[19,48,54,107],"temperature":[20,42,108],"(PVT)":[21],"variations":[22],"is":[23,30],"described":[24],"in":[25],"this":[26],"paper.":[27],"This":[28],"approach":[29],"ideal":[31],"mobile":[33],"applications":[34],"extreme":[36],"operating":[37],"conditions.":[38],"The":[39,59,93],"design":[40],"offers":[41],"coefficient":[43],"of":[44,52,78,84],"15.7":[45],"ppm//spl":[46],"deg/C":[47],"enables":[49],"the":[50],"stabilization":[51],"efficiency":[53],"output":[55,76],"with":[57,81],"ease.":[58],"concept":[60],"was":[61,91],"applied":[62],"to":[63],"a":[64,82,98],"dual":[65],"stage":[66],"designed":[69],"IS-95":[71],"CDMA":[72],"standard.":[73],"Maximum":[74],"linear":[75],"28.2":[79],"dBm":[80],"gain":[83],"28":[85],"dB":[86],"at":[87],"2.5V":[88],"supply":[89,105],"voltage":[90],"achieved.":[92],"has":[96],"shown":[97],"very":[99],"good":[100],"performance":[102],"variations.":[109]},"counts_by_year":[{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}