{"id":"https://openalex.org/W1542599869","doi":"https://doi.org/10.1109/iscas.2003.1205522","title":"On the feasibility of application of class E RF power amplifiers in UMTS","display_name":"On the feasibility of application of class E RF power amplifiers in UMTS","publication_year":2003,"publication_date":"2003-10-31","ids":{"openalex":"https://openalex.org/W1542599869","doi":"https://doi.org/10.1109/iscas.2003.1205522","mag":"1542599869"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2003.1205522","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2003.1205522","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03.","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019316496","display_name":"Du\u0161an Milo\u0161evi\u0107","orcid":"https://orcid.org/0000-0003-2248-6809"},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"D. Milosevic","raw_affiliation_strings":["Mixed-Signal Microelectronics (MsM) group, Eindhovan University of Technology, Eindhoven, Netherlands","Eindhoven University of Technology, Netherlands,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mixed-Signal Microelectronics (MsM) group, Eindhovan University of Technology, Eindhoven, Netherlands","institution_ids":["https://openalex.org/I83019370"]},{"raw_affiliation_string":"Eindhoven University of Technology, Netherlands,","institution_ids":["https://openalex.org/I83019370"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084894854","display_name":"J. van der Tang","orcid":"https://orcid.org/0009-0006-1670-5891"},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"J. van der Tang","raw_affiliation_strings":["Mixed-Signal Microelectronics (MsM) group, Eindhovan University of Technology, Eindhoven, Netherlands","Eindhoven University of Technology, Netherlands,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mixed-Signal Microelectronics (MsM) group, Eindhovan University of Technology, Eindhoven, Netherlands","institution_ids":["https://openalex.org/I83019370"]},{"raw_affiliation_string":"Eindhoven University of Technology, Netherlands,","institution_ids":["https://openalex.org/I83019370"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087716507","display_name":"Arthur van Roermund","orcid":"https://orcid.org/0000-0003-3865-3050"},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"A. van Roermund","raw_affiliation_strings":["Mixed-Signal Microelectronics (MsM) group, Eindhovan University of Technology, Eindhoven, Netherlands","Eindhoven University of Technology, Netherlands,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mixed-Signal Microelectronics (MsM) group, Eindhovan University of Technology, Eindhoven, Netherlands","institution_ids":["https://openalex.org/I83019370"]},{"raw_affiliation_string":"Eindhoven University of Technology, Netherlands,","institution_ids":["https://openalex.org/I83019370"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.4799,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.88373264,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"1","issue":null,"first_page":"I","last_page":"149"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12791","display_name":"Full-Duplex Wireless Communications","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7589756846427917},{"id":"https://openalex.org/keywords/umts-frequency-bands","display_name":"UMTS frequency bands","score":0.7180575728416443},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.6406718492507935},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5626484751701355},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.5403052568435669},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5360456109046936},{"id":"https://openalex.org/keywords/linearization","display_name":"Linearization","score":0.5119756460189819},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5003318786621094},{"id":"https://openalex.org/keywords/w-cdma","display_name":"W-CDMA","score":0.4916017949581146},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.47624921798706055},{"id":"https://openalex.org/keywords/emphasis","display_name":"Emphasis (telecommunications)","score":0.45867520570755005},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.4478316903114319},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.4379903972148895},{"id":"https://openalex.org/keywords/predistortion","display_name":"Predistortion","score":0.4212874472141266},{"id":"https://openalex.org/keywords/adjacent-channel","display_name":"Adjacent channel","score":0.4124397933483124},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3284958004951477},{"id":"https://openalex.org/keywords/code-division-multiple-access","display_name":"Code division multiple access","score":0.2979181706905365},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.2975965440273285},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2971045970916748},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.23500433564186096},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1805422306060791},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.13876980543136597},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09579136967658997}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7589756846427917},{"id":"https://openalex.org/C101618186","wikidata":"https://www.wikidata.org/wiki/Q3633928","display_name":"UMTS frequency bands","level":2,"score":0.7180575728416443},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.6406718492507935},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5626484751701355},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.5403052568435669},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5360456109046936},{"id":"https://openalex.org/C11210021","wikidata":"https://www.wikidata.org/wiki/Q1520713","display_name":"Linearization","level":3,"score":0.5119756460189819},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5003318786621094},{"id":"https://openalex.org/C120620775","wikidata":"https://www.wikidata.org/wiki/Q79686","display_name":"W-CDMA","level":3,"score":0.4916017949581146},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.47624921798706055},{"id":"https://openalex.org/C177454536","wikidata":"https://www.wikidata.org/wiki/Q578290","display_name":"Emphasis (telecommunications)","level":2,"score":0.45867520570755005},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.4478316903114319},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.4379903972148895},{"id":"https://openalex.org/C2778587875","wikidata":"https://www.wikidata.org/wiki/Q7239686","display_name":"Predistortion","level":4,"score":0.4212874472141266},{"id":"https://openalex.org/C2776908912","wikidata":"https://www.wikidata.org/wiki/Q16001834","display_name":"Adjacent channel","level":4,"score":0.4124397933483124},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3284958004951477},{"id":"https://openalex.org/C47696715","wikidata":"https://www.wikidata.org/wiki/Q233394","display_name":"Code division multiple access","level":2,"score":0.2979181706905365},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.2975965440273285},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2971045970916748},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.23500433564186096},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1805422306060791},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.13876980543136597},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09579136967658997},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1109/iscas.2003.1205522","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2003.1205522","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03.","raw_type":"proceedings-article"},{"id":"pmh:oai:pure.tue.nl:openaire_cris_publications/74fc4431-786d-4db7-81b3-89df95bc8d53","is_oa":false,"landing_page_url":"https://research.tue.nl/en/publications/74fc4431-786d-4db7-81b3-89df95bc8d53","pdf_url":null,"source":{"id":"https://openalex.org/S4406922641","display_name":"TU/e Research Portal","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Milosevic, D, Tang, van der, J D & Roermund, van, A H M 2003, On the Feasibility of Application of Class E RF Power Amplifiers in UMTS. in proceeding of ISCAS 2003. vol. 1, pp. 149-152.","raw_type":"info:eu-repo/semantics/publishedVersion"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.497.4898","is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.497.4898","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://w3.ele.tue.nl/fileadmin/ele/ICS/MsM/Files/Milosevic/paper_ISCAS2003.pdf","raw_type":"text"},{"id":"pmh:tue:oai:pure.tue.nl:publications/74fc4431-786d-4db7-81b3-89df95bc8d53","is_oa":false,"landing_page_url":"https://research.tue.nl/nl/publications/74fc4431-786d-4db7-81b3-89df95bc8d53","pdf_url":null,"source":{"id":"https://openalex.org/S4306401843","display_name":"Data Archiving and Networked Services (DANS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1322597698","host_organization_name":"Royal Netherlands Academy of Arts and Sciences","host_organization_lineage":["https://openalex.org/I1322597698"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"proceeding of ISCAS 2003, 1, 149 - 152","raw_type":"info:eu-repo/semantics/conferencepaper"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6899999976158142}],"awards":[],"funders":[{"id":"https://openalex.org/F4320334893","display_name":"Stichting voor de Technische Wetenschappen","ror":"https://ror.org/057tq3593"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1840105258","https://openalex.org/W2004512974","https://openalex.org/W2104183221","https://openalex.org/W2127297542","https://openalex.org/W2164527282","https://openalex.org/W2184707364","https://openalex.org/W2788359119","https://openalex.org/W6638618465","https://openalex.org/W6675379286"],"related_works":["https://openalex.org/W4328010791","https://openalex.org/W1494163759","https://openalex.org/W2054226711","https://openalex.org/W791078044","https://openalex.org/W2120655550","https://openalex.org/W2132266147","https://openalex.org/W2612107322","https://openalex.org/W2051416759","https://openalex.org/W4236930228","https://openalex.org/W2372043124"],"abstract_inverted_index":{"This":[0],"paper":[1],"investigates":[2],"the":[3,6,34,45,49,52,62,75,78,82,93,125],"feasibility":[4],"of":[5,8,51,77,98,115],"application":[7],"class":[9,18,105],"E":[10,19,106],"RF":[11,117],"power":[12,113],"amplifiers":[13],"in":[14,26,71,92],"UMTS.":[15],"A":[16],"typical":[17],"circuit":[20],"has":[21],"been":[22,59,88],"designed":[23],"and":[24,69,90,119],"simulated,":[25],"conjunction":[27],"with":[28],"a":[29],"linearization":[30],"scheme":[31],"based":[32],"on":[33,48,81],"EER":[35,38],"principle.":[36],"The":[37,100],"testbench":[39],"uses":[40],"ideal":[41],"building":[42],"blocks,":[43],"since":[44],"emphasis":[46],"is":[47,123],"operation":[50],"amplifier":[53],"itself.":[54],"Three":[55],"different":[56],"technologies":[57],"have":[58,87],"used":[60,111],"for":[61,96,112],"active":[63],"device":[64,79],"(Si":[65],"BJT,":[66],"GaAs":[67,121],"HBT":[68],"CMOS)":[70],"order":[72],"to":[73],"examine":[74],"influence":[76],"technology":[80,122],"PA":[83],"performance.":[84],"Relevant":[85],"parameters":[86],"monitored":[89],"put":[91],"table":[94],"form,":[95],"comparison":[97],"technologies.":[99],"simulation":[101],"results":[102],"indicate":[103],"that":[104,120],"PAs":[107],"can":[108],"successfully":[109],"be":[110],"amplification":[114],"WCDMA":[116],"signal":[118],"offering":[124],"highest":[126],"efficiency.":[127]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}