{"id":"https://openalex.org/W1905983355","doi":"https://doi.org/10.1109/iscas.2002.1010637","title":"A high-performance, low-voltage, body-driven CMOS current mirror","display_name":"A high-performance, low-voltage, body-driven CMOS current mirror","publication_year":2003,"publication_date":"2003-06-25","ids":{"openalex":"https://openalex.org/W1905983355","doi":"https://doi.org/10.1109/iscas.2002.1010637","mag":"1905983355"},"language":"en","primary_location":{"id":"doi:10.1109/iscas.2002.1010637","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2002.1010637","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100709506","display_name":"Xuguang Zhang","orcid":"https://orcid.org/0000-0001-8684-5802"},"institutions":[{"id":"https://openalex.org/I129902397","display_name":"Dalhousie University","ror":"https://ror.org/01e6qks80","country_code":"CA","type":"education","lineage":["https://openalex.org/I129902397"]}],"countries":["CA"],"is_corresponding":true,"raw_author_name":"Xuguang Zhang","raw_affiliation_strings":["Dept. of Electrical & Computer Engineering, Dalhousie University, Halifax, NS, Canada","Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical & Computer Engineering, Dalhousie University, Halifax, NS, Canada","institution_ids":["https://openalex.org/I129902397"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada","institution_ids":["https://openalex.org/I129902397"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110217232","display_name":"E.I. El-Masry","orcid":"https://orcid.org/0000-0003-0700-0591"},"institutions":[{"id":"https://openalex.org/I129902397","display_name":"Dalhousie University","ror":"https://ror.org/01e6qks80","country_code":"CA","type":"education","lineage":["https://openalex.org/I129902397"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"E.I. El-Masry","raw_affiliation_strings":["Dept. of Electrical & Computer Engineering, Dalhousie University, Halifax, NS, Canada","Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical & Computer Engineering, Dalhousie University, Halifax, NS, Canada","institution_ids":["https://openalex.org/I129902397"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada","institution_ids":["https://openalex.org/I129902397"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5100709506"],"corresponding_institution_ids":["https://openalex.org/I129902397"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.07630135,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"5","issue":null,"first_page":"V","last_page":"49"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11472","display_name":"Analytical Chemistry and Sensors","score":0.9939000010490417,"subfield":{"id":"https://openalex.org/subfields/1502","display_name":"Bioengineering"},"field":{"id":"https://openalex.org/fields/15","display_name":"Chemical Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8777874112129211},{"id":"https://openalex.org/keywords/current-mirror","display_name":"Current mirror","score":0.8619884252548218},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.6243568062782288},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5866243839263916},{"id":"https://openalex.org/keywords/output-impedance","display_name":"Output impedance","score":0.5178208947181702},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5074886679649353},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.5049036145210266},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.4853057265281677},{"id":"https://openalex.org/keywords/high-impedance","display_name":"High impedance","score":0.44053390622138977},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.436795175075531},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.37279438972473145},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3495279848575592},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2388153374195099},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.17918944358825684}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8777874112129211},{"id":"https://openalex.org/C173966970","wikidata":"https://www.wikidata.org/wiki/Q786012","display_name":"Current mirror","level":4,"score":0.8619884252548218},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.6243568062782288},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5866243839263916},{"id":"https://openalex.org/C58112919","wikidata":"https://www.wikidata.org/wiki/Q631203","display_name":"Output impedance","level":3,"score":0.5178208947181702},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5074886679649353},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.5049036145210266},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.4853057265281677},{"id":"https://openalex.org/C174268685","wikidata":"https://www.wikidata.org/wiki/Q769127","display_name":"High impedance","level":3,"score":0.44053390622138977},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.436795175075531},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37279438972473145},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3495279848575592},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2388153374195099},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17918944358825684}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iscas.2002.1010637","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iscas.2002.1010637","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8199999928474426,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1542699763","https://openalex.org/W1564201208","https://openalex.org/W1597287320","https://openalex.org/W1597527761","https://openalex.org/W2023420003","https://openalex.org/W2023575716","https://openalex.org/W2104117929","https://openalex.org/W2108915325","https://openalex.org/W2112553060","https://openalex.org/W2114037503","https://openalex.org/W2114228040","https://openalex.org/W2126291521","https://openalex.org/W2132586017","https://openalex.org/W2135075051","https://openalex.org/W2148056645","https://openalex.org/W2157637127","https://openalex.org/W2168192238","https://openalex.org/W3147616483","https://openalex.org/W6635660071"],"related_works":["https://openalex.org/W2142686261","https://openalex.org/W2055216439","https://openalex.org/W2060030877","https://openalex.org/W3128254849","https://openalex.org/W2171251991","https://openalex.org/W4367672007","https://openalex.org/W2548458865","https://openalex.org/W4297786912","https://openalex.org/W2374745466","https://openalex.org/W2356432821"],"abstract_inverted_index":{"A":[0],"novel":[1,70],"high-performance":[2],"low-voltage":[3],"CMOS":[4,15,62],"current":[5,28,39,71],"mirror":[6],"is":[7,11],"proposed.":[8],"The":[9],"circuit":[10],"based":[12],"on":[13],"body-driven":[14],"technology":[16,63],"and":[17,42],"implements":[18],"gain-enhancement":[19],"technique.":[20],"It":[21],"offers":[22],"high":[23,31],"transfer":[24],"accuracy":[25],"over":[26],"wide":[27],"range,":[29],"extremely":[30],"output":[32,40],"impedance":[33],"that":[34],"makes":[35],"it":[36],"suitable":[37],"for":[38],"stage":[41],"ultra":[43],"low":[44],"input":[45],"voltage":[46],"requirement":[47],"down":[48],"to":[49,52],"very":[50],"close":[51],"0":[53],"V.":[54],"Simulation":[55],"results":[56],"using":[57],"0.18":[58],"/spl":[59],"mu/m":[60],"N-well":[61],"confirm":[64],"the":[65],"excellent":[66],"performance":[67],"of":[68],"this":[69],"mirror.":[72]},"counts_by_year":[{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}