{"id":"https://openalex.org/W4396949279","doi":"https://doi.org/10.1109/irps48228.2024.10529491","title":"Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor","display_name":"Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949279","doi":"https://doi.org/10.1109/irps48228.2024.10529491"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529491","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529491","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063191788","display_name":"Moonyoung Jeong","orcid":"https://orcid.org/0000-0002-5655-1931"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Moonyoung Jeong","raw_affiliation_strings":["Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100381300","display_name":"Sang Ho Lee","orcid":"https://orcid.org/0000-0002-4954-3861"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangho Lee","raw_affiliation_strings":["Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113209387","display_name":"Yootak Jun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yootak Jun","raw_affiliation_strings":["Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020370968","display_name":"Kiseok Lee","orcid":"https://orcid.org/0000-0003-3326-5999"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kiseok Lee","raw_affiliation_strings":["Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034143289","display_name":"Seokhan Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seokhan Park","raw_affiliation_strings":["Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048891008","display_name":"Jeong\u2010Hoon Oh","orcid":"https://orcid.org/0000-0002-9185-7362"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jeonghoon Oh","raw_affiliation_strings":["Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027074780","display_name":"Ilgweon Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ilgweon Kim","raw_affiliation_strings":["Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co. Ltd.,Jaihyuk Song Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005600710","display_name":"Jemin Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jemin Park","raw_affiliation_strings":["Samsung Electronics Co. Ltd.,Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co. Ltd.,Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5020871427","display_name":"Jaihyuk Song","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaihyuk Song","raw_affiliation_strings":["Samsung Electronics Co. Ltd.,Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co. Ltd.,Semiconductor R&D Center,Samsungjeonja-ro,Hwasung,S.Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5063191788"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.8878,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.72996419,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"P23.MR","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.9247876405715942},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6180272102355957},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.576541006565094},{"id":"https://openalex.org/keywords/line","display_name":"Line (geometry)","score":0.5362548232078552},{"id":"https://openalex.org/keywords/word","display_name":"Word (group theory)","score":0.4991757869720459},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4935659170150757},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.43184366822242737},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3761879801750183},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.323650598526001},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.30721044540405273},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2740894556045532},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2514234781265259},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.10286855697631836}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.9247876405715942},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6180272102355957},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.576541006565094},{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.5362548232078552},{"id":"https://openalex.org/C90805587","wikidata":"https://www.wikidata.org/wiki/Q10944557","display_name":"Word (group theory)","level":2,"score":0.4991757869720459},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4935659170150757},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.43184366822242737},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3761879801750183},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.323650598526001},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.30721044540405273},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2740894556045532},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2514234781265259},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.10286855697631836},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529491","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529491","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5799999833106995}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2014348683","https://openalex.org/W2149205172","https://openalex.org/W2157116240","https://openalex.org/W4286571906","https://openalex.org/W4391622573"],"related_works":["https://openalex.org/W3120961607","https://openalex.org/W4401568740","https://openalex.org/W2098207691","https://openalex.org/W3148568549","https://openalex.org/W1648516568","https://openalex.org/W361036515","https://openalex.org/W2269474412","https://openalex.org/W4386903460","https://openalex.org/W4211178602","https://openalex.org/W1518256384"],"abstract_inverted_index":{"A":[0,13],"novel":[1],"vertical":[2],"channel":[3],"DRAM":[4],"cell":[5],"array":[6],"transistor":[7],"has":[8,22,50],"been":[9,23],"proposed":[10],"and":[11,32,42,66],"verified.":[12],"back":[14],"gate":[15,64],"shared":[16],"by":[17,59],"adjacent":[18],"two":[19],"word":[20,28,47,55],"lines":[21],"introduced":[24],"to":[25],"have":[26],"both":[27],"line":[29,48,56],"disturb":[30,57],"immunity":[31],"threshold":[33],"voltage":[34],"controllability,":[35],"while":[36],"having":[37],"a":[38],"small":[39],"foot":[40],"print":[41],"corresponding":[43],"scalability.":[44],"The":[45],"increased":[46],"coupling":[49],"less":[51],"effect":[52],"on":[53],"overall":[54],"immunity,":[58],"virtue":[60],"of":[61],"insignificant":[62],"passing":[63],"effects":[65],"reduced":[67],"variability.":[68]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2}],"updated_date":"2025-12-22T23:10:17.713674","created_date":"2025-10-10T00:00:00"}