{"id":"https://openalex.org/W4396949773","doi":"https://doi.org/10.1109/irps48228.2024.10529485","title":"HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications","display_name":"HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949773","doi":"https://doi.org/10.1109/irps48228.2024.10529485"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529485","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529485","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004810591","display_name":"Yu-Shyan Lin","orcid":"https://orcid.org/0000-0002-1428-2227"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y.S. Lin","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104301544","display_name":"Cheng Hsun Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Cheng Hsun Yang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114106174","display_name":"C.H. Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"C.H. Wang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111572937","display_name":"K. P. Sou","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"K.P. Sou","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060417049","display_name":"Cheng Yang","orcid":"https://orcid.org/0000-0001-7821-0030"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Cheng Hong Yang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004901249","display_name":"Ming Chang Shih","orcid":"https://orcid.org/0000-0002-6718-2254"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"M.C. Shih","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111827229","display_name":"W.S. Hung","orcid":"https://orcid.org/0000-0002-7431-7583"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"W.S. Hung","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041655350","display_name":"W. H. Chuang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"W. H. Chuang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality &#x0026; Reliability Division,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111197315","display_name":"Fong\u2010Min Ciou","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"F.M. Ciou","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan","High Voltage Product Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"High Voltage Product Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080250964","display_name":"Pei C. Chiu","orcid":"https://orcid.org/0000-0003-2319-4496"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"P. C. Chiu","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan","High Voltage Product Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"High Voltage Product Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080574695","display_name":"Chih-Chao Hsu","orcid":"https://orcid.org/0000-0001-9552-1949"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"C.C. Hsu","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan","High Voltage Product Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"High Voltage Product Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075298967","display_name":"C.F. Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"C.F. Chen","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan","High Voltage Product Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"High Voltage Product Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109716855","display_name":"Di-Son Kuo","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"D.M. Kuo","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Co., Ltd.,Process Integration Engineering,Hsinchu,Taiwan","Process Integration Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Co., Ltd.,Process Integration Engineering,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Process Integration Engineering, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210120917"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"2C.4","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.9020086526870728},{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.702661395072937},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6164860725402832},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5791793465614319},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.524651288986206},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5073308348655701},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.4784698188304901},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.47241082787513733},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3634134531021118},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.28093451261520386},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17808958888053894},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16184723377227783},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11403912305831909}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.9020086526870728},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.702661395072937},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6164860725402832},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5791793465614319},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.524651288986206},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5073308348655701},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.4784698188304901},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.47241082787513733},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3634134531021118},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.28093451261520386},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17808958888053894},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16184723377227783},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11403912305831909},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529485","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529485","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8600000143051147}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1975192363","https://openalex.org/W1983914478","https://openalex.org/W1986594576","https://openalex.org/W2085066220","https://openalex.org/W2111430300","https://openalex.org/W2115067661","https://openalex.org/W2135780270","https://openalex.org/W2137003270","https://openalex.org/W2141981815","https://openalex.org/W2161910747","https://openalex.org/W2461874365","https://openalex.org/W2593495332","https://openalex.org/W2623811665","https://openalex.org/W2788013722","https://openalex.org/W2967945770","https://openalex.org/W3121745077","https://openalex.org/W3206293236","https://openalex.org/W3212391347","https://openalex.org/W4285109938","https://openalex.org/W4365131572"],"related_works":["https://openalex.org/W2532810475","https://openalex.org/W4390729576","https://openalex.org/W2171730916","https://openalex.org/W1986136028","https://openalex.org/W2162684047","https://openalex.org/W1943995216","https://openalex.org/W2098291540","https://openalex.org/W1992369447","https://openalex.org/W2598293455","https://openalex.org/W2741440636"],"abstract_inverted_index":{"This":[0],"study":[1],"on":[2],"utilizing":[3],"HV-CV":[4,41],"analysis":[5],"to":[6,42],"investigate":[7],"the":[8,45,51,70,73],"correlation":[9],"between":[10],"defect":[11],"generation":[12],"regions":[13],"and":[14,26,57,66],"field":[15,25],"plates":[16],"in":[17,36,50,55],"pGaN":[18],"HEMT.":[19],"The":[20],"FPs":[21,71],"can":[22],"reduce":[23],"surface":[24],"improve":[27],"VBD,":[28],"but":[29],"it":[30],"may":[31],"introduce":[32],"complexities":[33],"trapping":[34],"behavior":[35],"HTRB.":[37],"However,":[38],"we":[39],"used":[40],"demonstrate":[43],"that":[44],"presence":[46],"of":[47],"C":[48],"impurities":[49],"buffer":[52],"layer":[53],"results":[54],"positive":[56],"negative":[58],"charge":[59],"redistribution.":[60],"Furthermore,":[61],"optimizing":[62],"process":[63],"enhances":[64],"performance":[65],"reliability,":[67],"particularly":[68],"below":[69],"near":[72],"gate.":[74]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}
