{"id":"https://openalex.org/W4396949577","doi":"https://doi.org/10.1109/irps48228.2024.10529478","title":"Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology","display_name":"Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949577","doi":"https://doi.org/10.1109/irps48228.2024.10529478"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529478","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529478","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110253387","display_name":"S. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"S. Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012627867","display_name":"N-H Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"N-H Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067310853","display_name":"G-J Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"G-J Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045468765","display_name":"Jin-Ho Ahn","orcid":"https://orcid.org/0000-0001-8776-5185"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. Ahn","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063082923","display_name":"I.S. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"IH. Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023497481","display_name":"Sangtae Ha","orcid":"https://orcid.org/0000-0001-5983-5430"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Ha","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030433049","display_name":"Sehun Rhee","orcid":"https://orcid.org/0000-0002-0039-5650"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Rhee","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111876132","display_name":"G.J. Bae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"GH Bae","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018052057","display_name":"Kyung-Woo Lee","orcid":"https://orcid.org/0000-0002-3533-7979"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"KW Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072736104","display_name":"Yung Seng Lee","orcid":"https://orcid.org/0000-0002-1253-0557"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"YS Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111197297","display_name":"SB. Ko","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"SB. Ko","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010124316","display_name":"Sangwoo Pae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Pae","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwasung,Republic of Korea","Memory Division, Samsung Electronics, Hwasung, Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwasung,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwasung, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5110253387"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.6674,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.67800661,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"P69.TX","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7196921110153198},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.7032825946807861},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.6597417593002319},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5624687075614929},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5152056813240051},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4876803159713745},{"id":"https://openalex.org/keywords/silicon-nitride","display_name":"Silicon nitride","score":0.4618936777114868},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.33731842041015625},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.33674904704093933},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.2749793231487274},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2453540563583374},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17545321583747864}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7196921110153198},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7032825946807861},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6597417593002319},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5624687075614929},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5152056813240051},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4876803159713745},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.4618936777114868},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.33731842041015625},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33674904704093933},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2749793231487274},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2453540563583374},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17545321583747864},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529478","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529478","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2040269406","https://openalex.org/W2429645792","https://openalex.org/W2735956904","https://openalex.org/W4376606642","https://openalex.org/W4376606652"],"related_works":["https://openalex.org/W3120961607","https://openalex.org/W4401568740","https://openalex.org/W2098207691","https://openalex.org/W3148568549","https://openalex.org/W1648516568","https://openalex.org/W361036515","https://openalex.org/W2269474412","https://openalex.org/W4386903460","https://openalex.org/W4211178602","https://openalex.org/W1518256384"],"abstract_inverted_index":{"The":[0,17,45],"effect":[1],"of":[2,24,50,72,83,93,103],"Off-state":[3],"stress":[4,151],"on":[5],"a":[6,11,147],"propagation":[7],"delay":[8],"(tPD)":[9],"and":[10,64,96,117,140,145],"data-valid":[12],"window":[13],"(tDV)":[14],"was":[15,74,86,106],"characterized.":[16],"experimental":[18,123],"result":[19,124],"showed":[20],"that":[21,69],"the":[22,29,33,36,41,70,77,81,90,94,127,149],"Vth":[23],"PMOSET":[25],"reduced":[26],"due":[27],"to":[28],"electron":[30],"trapping":[31],"into":[32],"nitride":[34],"in":[35,40,43],"STI,":[37],"thus":[38],"resulting":[39],"decrease":[42],"tDV.":[44],"extracted":[46],"time":[47],"slope":[48],"n":[49],"NBTI,":[51,115],"off-state":[52,78,84,113,150],"degradation,":[53],"<tex":[54],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[55],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\Delta":[56],"\\text{tPD},":[57],"\\Delta":[58],"\\text{tDV}$</tex>":[59],"were":[60,143],"\u223c0.23,":[61],"\u223c0.4,":[62],"\u223c0.32,":[63],"\u223c0.4":[65],"respectively.":[66],"It":[67],"indicates":[68],"degradation":[71,85,105],"tDV":[73,104],"dominated":[75],"by":[76,88],"stress.":[79],"Thus,":[80],"mechanism":[82],"investigated":[87],"varying":[89],"physical":[91],"dimensions":[92],"transistor":[95],"STI":[97,141],"structure.":[98],"Moreover,":[99],"an":[100,122],"empirical":[101],"model":[102],"proposed":[107],"using":[108],"device":[109],"models":[110],"such":[111,135],"as":[112,136,146],"stress,":[114],"HCI,":[116],"it":[118],"matched":[119],"well":[120,153],"with":[121],"measured":[125],"at":[126],"system":[128],"level.":[129],"With":[130],"this":[131],"model,":[132],"various":[133],"processes":[134],"implantation,":[137],"SiGe":[138],"channel,":[139],"structure":[142],"optimized,":[144],"result,":[148],"is":[152],"controlled.":[154]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}