{"id":"https://openalex.org/W4396980747","doi":"https://doi.org/10.1109/irps48228.2024.10529464","title":"Body Bias Impact on I<sub>ON</sub> Degradation in SiGe-Channel pMOS without Si-Cap for DRAM Periphery","display_name":"Body Bias Impact on I<sub>ON</sub> Degradation in SiGe-Channel pMOS without Si-Cap for DRAM Periphery","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396980747","doi":"https://doi.org/10.1109/irps48228.2024.10529464"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529464","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48228.2024.10529464","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023202619","display_name":"Dibyendu Chatterjee","orcid":"https://orcid.org/0000-0002-9036-2042"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Dibyendu Chatterjee","raw_affiliation_strings":["Micron Technology,Hyderabad,India","Micron Technology, Hyderabad, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron Technology,Hyderabad,India","institution_ids":[]},{"raw_affiliation_string":"Micron Technology, Hyderabad, India","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019929574","display_name":"Uma Sharma","orcid":"https://orcid.org/0000-0002-5682-9905"},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Uma Sharma","raw_affiliation_strings":["Micron Technology,Boise,USA","Micron Technology, Boise, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron Technology,Boise,USA","institution_ids":["https://openalex.org/I11912373"]},{"raw_affiliation_string":"Micron Technology, Boise, USA","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012374362","display_name":"Hiroshi Murai","orcid":null},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]},{"id":"https://openalex.org/I139084617","display_name":"Hiroshima Institute of Technology","ror":"https://ror.org/02bwkwm60","country_code":"JP","type":"education","lineage":["https://openalex.org/I139084617"]},{"id":"https://openalex.org/I4210132892","display_name":"Micron (Japan)","ror":"https://ror.org/03mm3ph30","country_code":"JP","type":"company","lineage":["https://openalex.org/I11912373","https://openalex.org/I4210132892"]}],"countries":["JP","US"],"is_corresponding":false,"raw_author_name":"Hiroshi Murai","raw_affiliation_strings":["Micron Technology,Hiroshima,Japan","Micron Technology, Hiroshima, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron Technology,Hiroshima,Japan","institution_ids":["https://openalex.org/I11912373","https://openalex.org/I139084617"]},{"raw_affiliation_string":"Micron Technology, Hiroshima, Japan","institution_ids":["https://openalex.org/I4210132892"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112006338","display_name":"Tomohiko Kudo","orcid":null},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]},{"id":"https://openalex.org/I139084617","display_name":"Hiroshima Institute of Technology","ror":"https://ror.org/02bwkwm60","country_code":"JP","type":"education","lineage":["https://openalex.org/I139084617"]},{"id":"https://openalex.org/I4210132892","display_name":"Micron (Japan)","ror":"https://ror.org/03mm3ph30","country_code":"JP","type":"company","lineage":["https://openalex.org/I11912373","https://openalex.org/I4210132892"]}],"countries":["JP","US"],"is_corresponding":false,"raw_author_name":"Tomohiko Kudo","raw_affiliation_strings":["Micron Technology,Hiroshima,Japan","Micron Technology, Hiroshima, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron Technology,Hiroshima,Japan","institution_ids":["https://openalex.org/I11912373","https://openalex.org/I139084617"]},{"raw_affiliation_string":"Micron Technology, Hiroshima, Japan","institution_ids":["https://openalex.org/I4210132892"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109717174","display_name":"Raghu Singanamalla","orcid":null},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Raghu Singanamalla","raw_affiliation_strings":["Micron Technology,Boise,USA","Micron Technology, Boise, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron Technology,Boise,USA","institution_ids":["https://openalex.org/I11912373"]},{"raw_affiliation_string":"Micron Technology, Boise, USA","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100413183","display_name":"Haitao Liu","orcid":"https://orcid.org/0000-0003-3628-5688"},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Haitao Liu","raw_affiliation_strings":["Micron Technology,Boise,USA","Micron Technology, Boise, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron Technology,Boise,USA","institution_ids":["https://openalex.org/I11912373"]},{"raw_affiliation_string":"Micron Technology, Boise, USA","institution_ids":["https://openalex.org/I11912373"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.9271,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.62184741,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"P22.MR","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.9157493710517883},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.821199893951416},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.6712921261787415},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5232659578323364},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5145377516746521},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.4369296133518219},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.43002697825431824},{"id":"https://openalex.org/keywords/silicon-germanium","display_name":"Silicon-germanium","score":0.41839519143104553},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3588099479675293},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.3352252244949341},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3120003938674927},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19951766729354858},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.15312460064888},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11989179253578186}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.9157493710517883},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.821199893951416},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6712921261787415},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5232659578323364},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5145377516746521},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.4369296133518219},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.43002697825431824},{"id":"https://openalex.org/C2780389399","wikidata":"https://www.wikidata.org/wiki/Q367849","display_name":"Silicon-germanium","level":3,"score":0.41839519143104553},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3588099479675293},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3352252244949341},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3120003938674927},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19951766729354858},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15312460064888},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11989179253578186},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529464","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48228.2024.10529464","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1541920164","https://openalex.org/W1965229716","https://openalex.org/W1966571707","https://openalex.org/W1968565334","https://openalex.org/W1973659025","https://openalex.org/W1995863305","https://openalex.org/W2009063167","https://openalex.org/W2026610840","https://openalex.org/W2096331283","https://openalex.org/W2105327370","https://openalex.org/W2142047886","https://openalex.org/W2153189661","https://openalex.org/W2181837645","https://openalex.org/W2524420814","https://openalex.org/W2929001642"],"related_works":["https://openalex.org/W3176348399","https://openalex.org/W2064932968","https://openalex.org/W1972096838","https://openalex.org/W2111295765","https://openalex.org/W2033051304","https://openalex.org/W2080378350","https://openalex.org/W2539446995","https://openalex.org/W2143395118","https://openalex.org/W2245345196","https://openalex.org/W2033801177"],"abstract_inverted_index":{"This":[0],"paper":[1],"investigates":[2],"the":[3,36,56,66,72,76],"impact":[4,67],"of":[5,44,68],"body":[6],"bias":[7],"(VBS)":[8],"on":[9,71],"ION":[10,27,37],"degradation":[11,28,38],"in":[12,51],"SiGe-channel":[13,23,45],"pMOS":[14],"without":[15],"Si-cap":[16],"for":[17],"DRAM":[18],"periphery.":[19],"Experimental":[20],"data":[21],"show":[22],"devices":[24,61],"have":[25],"higher":[26,47,52],"under":[29],"VBS-stress.":[30],"In":[31],"this":[32],"paper,":[33],"we":[34],"investigate":[35],"mechanisms":[39],"using":[40],"TCAD.":[41],"Narrower":[42],"bandgap":[43],"causes":[46],"electric":[48,73],"field,":[49],"resulting":[50],"trap":[53],"generation":[54],"at":[55],"SiGe\u2013":[57],"SiO2interface.":[58],"Different":[59],"VTHSiGe-channel":[60],"are":[62],"studied":[63],"to":[64],"understand":[65],"channel":[69],"doping":[70],"field":[74],"inside":[75],"device.":[77]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}