{"id":"https://openalex.org/W4396949981","doi":"https://doi.org/10.1109/irps48228.2024.10529451","title":"Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification","display_name":"Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949981","doi":"https://doi.org/10.1109/irps48228.2024.10529451"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529451","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529451","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100359329","display_name":"Da Wang","orcid":"https://orcid.org/0000-0002-0365-5673"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Da Wang","raw_affiliation_strings":["Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"],"affiliations":[{"raw_affiliation_string":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078217690","display_name":"Yongkang Xue","orcid":"https://orcid.org/0000-0003-4542-5566"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yongkang Xue","raw_affiliation_strings":["Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"],"affiliations":[{"raw_affiliation_string":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100371133","display_name":"Yong Liu","orcid":"https://orcid.org/0000-0002-8940-150X"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yong Liu","raw_affiliation_strings":["Institute of Semiconductors, Chinese Academy of Sciences,State Key Laboratory of Superlattices and Microstructures,Beijing,China,100083","Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors, Chinese Academy of Sciences,State Key Laboratory of Superlattices and Microstructures,Beijing,China,100083","institution_ids":["https://openalex.org/I4210149211","https://openalex.org/I19820366"]},{"raw_affiliation_string":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043582183","display_name":"Pengpeng Ren","orcid":"https://orcid.org/0009-0001-2986-9231"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Pengpeng Ren","raw_affiliation_strings":["Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"],"affiliations":[{"raw_affiliation_string":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022461285","display_name":"Zixuan Sun","orcid":"https://orcid.org/0000-0002-8257-5531"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zixuan Sun","raw_affiliation_strings":["School of Integrated Circuits, Peking University,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Peking University,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111126191","display_name":"Zirui Wang","orcid":"https://orcid.org/0009-0002-1941-517X"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zirui Wang","raw_affiliation_strings":["School of Integrated Circuits, Peking University,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Peking University,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067411021","display_name":"Yue\u2010Yang Liu","orcid":"https://orcid.org/0000-0001-6508-4215"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yueyang Liu","raw_affiliation_strings":["Institute of Semiconductors, Chinese Academy of Sciences,State Key Laboratory of Superlattices and Microstructures,Beijing,China,100083","Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors, Chinese Academy of Sciences,State Key Laboratory of Superlattices and Microstructures,Beijing,China,100083","institution_ids":["https://openalex.org/I4210149211","https://openalex.org/I19820366"]},{"raw_affiliation_string":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111197322","display_name":"Zhijun Cheng","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zhijun Cheng","raw_affiliation_strings":["Changxin Memory Technologies, Inc.,HeFei,China,230088"],"affiliations":[{"raw_affiliation_string":"Changxin Memory Technologies, Inc.,HeFei,China,230088","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100606279","display_name":"Haiyang Yang","orcid":"https://orcid.org/0000-0001-8369-2863"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Haiyang Yang","raw_affiliation_strings":["Changxin Memory Technologies, Inc.,HeFei,China,230088"],"affiliations":[{"raw_affiliation_string":"Changxin Memory Technologies, Inc.,HeFei,China,230088","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101554723","display_name":"Xiangli Liu","orcid":"https://orcid.org/0000-0002-1753-0011"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xiangli Liu","raw_affiliation_strings":["Changxin Memory Technologies, Inc.,HeFei,China,230088"],"affiliations":[{"raw_affiliation_string":"Changxin Memory Technologies, Inc.,HeFei,China,230088","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108449418","display_name":"Blacksmith Wu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Blacksmith Wu","raw_affiliation_strings":["Changxin Memory Technologies, Inc.,HeFei,China,230088"],"affiliations":[{"raw_affiliation_string":"Changxin Memory Technologies, Inc.,HeFei,China,230088","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053073618","display_name":"Kanyu Cao","orcid":"https://orcid.org/0000-0002-1931-6836"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kanyu Cao","raw_affiliation_strings":["Changxin Memory Technologies, Inc.,HeFei,China,230088"],"affiliations":[{"raw_affiliation_string":"Changxin Memory Technologies, Inc.,HeFei,China,230088","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002760019","display_name":"Runsheng Wang","orcid":"https://orcid.org/0000-0002-7514-0767"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Runsheng Wang","raw_affiliation_strings":["School of Integrated Circuits, Peking University,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Peking University,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058083493","display_name":"Zhigang Ji","orcid":"https://orcid.org/0000-0003-1138-804X"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhigang Ji","raw_affiliation_strings":["Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"],"affiliations":[{"raw_affiliation_string":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5012603707","display_name":"Ru Huang","orcid":"https://orcid.org/0000-0001-7545-0987"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ru Huang","raw_affiliation_strings":["School of Integrated Circuits, Peking University,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuits, Peking University,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":15,"corresponding_author_ids":["https://openalex.org/A5100359329"],"corresponding_institution_ids":["https://openalex.org/I183067930"],"apc_list":null,"apc_paid":null,"fwci":0.8878,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.72999126,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"9B.2","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.8819897174835205},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8480304479598999},{"id":"https://openalex.org/keywords/identification","display_name":"Identification (biology)","score":0.5814235210418701},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5472218990325928},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.5320737361907959},{"id":"https://openalex.org/keywords/instability","display_name":"Instability","score":0.45500752329826355},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.45411255955696106},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.4381087124347687},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3797905147075653},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3020349144935608},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2369382381439209},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23510736227035522},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.21259373426437378},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2024737000465393},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1549798548221588},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10787984728813171},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08417695760726929},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.08360794186592102}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.8819897174835205},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8480304479598999},{"id":"https://openalex.org/C116834253","wikidata":"https://www.wikidata.org/wiki/Q2039217","display_name":"Identification (biology)","level":2,"score":0.5814235210418701},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5472218990325928},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5320737361907959},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.45500752329826355},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.45411255955696106},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.4381087124347687},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3797905147075653},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3020349144935608},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2369382381439209},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23510736227035522},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.21259373426437378},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2024737000465393},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1549798548221588},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10787984728813171},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08417695760726929},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.08360794186592102},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C59822182","wikidata":"https://www.wikidata.org/wiki/Q441","display_name":"Botany","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529451","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529451","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/13","score":0.7699999809265137,"display_name":"Climate action"}],"awards":[{"id":"https://openalex.org/G4083351702","display_name":null,"funder_award_id":"2019YFB2205005","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G4587596139","display_name":null,"funder_award_id":"62027818,92164205","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1986415905","https://openalex.org/W2001190115","https://openalex.org/W2050206140","https://openalex.org/W2136063838","https://openalex.org/W2802502993","https://openalex.org/W2945021717","https://openalex.org/W3013320480","https://openalex.org/W3186878565","https://openalex.org/W4220883441","https://openalex.org/W4225303553","https://openalex.org/W4225327006","https://openalex.org/W4226094037","https://openalex.org/W4286571720","https://openalex.org/W4312050911","https://openalex.org/W4317794237","https://openalex.org/W4365131568","https://openalex.org/W4385453086","https://openalex.org/W4388726449","https://openalex.org/W4391622602"],"related_works":["https://openalex.org/W2094308961","https://openalex.org/W2533585248","https://openalex.org/W4386903460","https://openalex.org/W2134643927","https://openalex.org/W2806599233","https://openalex.org/W2130233920","https://openalex.org/W2473808647","https://openalex.org/W4389476207","https://openalex.org/W2125880695","https://openalex.org/W2120093897"],"abstract_inverted_index":{"This":[0],"paper":[1],"studies":[2],"the":[3,18,27,41,46,53,88],"negative":[4],"bias":[5],"temperature":[6],"instability":[7],"(NBTI)":[8],"starting":[9],"with":[10,64],"100":[11],"ns":[12],"in":[13],"sub-20-nm":[14],"DRAM":[15,91],"technology":[16],"for":[17],"first":[19],"time.":[20],"Ultra-fast":[21],"electron":[22],"traps":[23,37,60,70],"were":[24,38],"isolated":[25],"by":[26],"time-voltage":[28],"swept":[29],"charge":[30],"pumping":[31],"technique.":[32,44],"Distinct":[33],"types":[34],"of":[35,58,87,90],"slow":[36],"separated":[39],"using":[40],"discharging-based":[42],"multi-pulse":[43],"Considering":[45],"non-radiative":[47],"multi-phonon":[48],"theory,":[49],"we":[50],"precisely":[51],"obtained":[52],"spatial":[54],"and":[55,77],"energy":[56],"distribution":[57],"various":[59],"and,":[61],"through":[62],"comparison":[63],"ab-initio":[65],"calculations,":[66],"revealed":[67],"that":[68],"these":[69],"originate":[71],"from":[72],"nitrogen":[73,78],"substitution,":[74],"oxygen":[75],"vacancies,":[76],"interstitial.":[79],"The":[80],"results":[81],"contribute":[82],"to":[83],"a":[84],"deeper":[85],"understanding":[86],"reliability":[89],"devices.":[92]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3}],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}