{"id":"https://openalex.org/W4396949324","doi":"https://doi.org/10.1109/irps48228.2024.10529424","title":"Thermo-Mechanical Reliability Characteristics of 8H HBM3","display_name":"Thermo-Mechanical Reliability Characteristics of 8H HBM3","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949324","doi":"https://doi.org/10.1109/irps48228.2024.10529424"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529424","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529424","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045914271","display_name":"Jinsoo Bae","orcid":"https://orcid.org/0000-0002-4317-3636"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jinsoo Bae","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110778573","display_name":"H. G. Noh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"HG. Noh","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113209391","display_name":"S. M. Yoo","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"SJ. Yoo","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108929797","display_name":"IJ. Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"IJ. Choi","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111876132","display_name":"G.J. Bae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"GH. Bae","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101354649","display_name":"YM. Shim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"YM. Shim","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111197298","display_name":"SG. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"SG. Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112389997","display_name":"Han Jun Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H. Jang","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111197299","display_name":"SM. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"SM. Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101354648","display_name":"GH. Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"GH. Chang","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113209390","display_name":"KS. Kwon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"KS. Kwon","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114161372","display_name":"CB. Yoon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"CB. Yoon","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110975542","display_name":"YS. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"YS. Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108929796","display_name":"JW. Pyun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"JW. Pyun","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110910238","display_name":"J.Y. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"JH. Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111197297","display_name":"SB. Ko","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"SB. Ko","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054060744","display_name":"YC. Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"YC. Hwang","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010124316","display_name":"Sangwoo Pae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Pae","raw_affiliation_strings":["Memory Division, Samsung Electronics,Hwaseong,Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics,Hwaseong,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":18,"corresponding_author_ids":["https://openalex.org/A5045914271"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.8848,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.7509402,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11242","display_name":"Nuclear Materials and Properties","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11242","display_name":"Nuclear Materials and Properties","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12932","display_name":"Powder Metallurgy Techniques and Materials","score":0.9923999905586243,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10396","display_name":"Fatigue and fracture mechanics","score":0.9747999906539917,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6304147243499756},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.524878203868866},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4135953485965729},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.34786587953567505},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15539765357971191},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09009522199630737}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6304147243499756},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.524878203868866},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4135953485965729},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.34786587953567505},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15539765357971191},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09009522199630737},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529424","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529424","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7200000286102295}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W160443752","https://openalex.org/W2098176834","https://openalex.org/W4205415521","https://openalex.org/W4225993920","https://openalex.org/W4285103176","https://openalex.org/W4376606762","https://openalex.org/W4385525225","https://openalex.org/W4400062334"],"related_works":["https://openalex.org/W2033512842","https://openalex.org/W4322734194","https://openalex.org/W4233600955","https://openalex.org/W2913665393","https://openalex.org/W2369695847","https://openalex.org/W3005535424","https://openalex.org/W2994319598","https://openalex.org/W2047067935","https://openalex.org/W1607054433","https://openalex.org/W2110842462"],"abstract_inverted_index":{"Due":[0],"to":[1,39,50,66,125,198],"the":[2,40,51,58,72,85,88,97,114,130,148,178,181,204,214],"demands":[3],"of":[4,60,92,121,150,156,180,189,207],"artificial":[5],"intelligence":[6],"(AI)":[7],"and":[8,68,90,107,141,158,171],"high-performance":[9],"computing":[10],"(HPC)":[11],"servers,":[12],"high":[13],"bandwidth":[14],"memory":[15],"(HBM)":[16],"used":[17],"in":[18,20,71,84,111],"system":[19],"package":[21,104,133,183,209,216],"(SiP)":[22],"has":[23,27],"increased":[24,82],"tremendously.":[25],"HBM":[26,61,93,115,132,136],"been":[28],"built":[29],"with":[30,44,57,81,102,138,160],"stacked":[31,77],"DRAM":[32,78],"memories":[33],"(ranging":[34],"from":[35,64,164],"8,":[36],"called":[37],"8H,":[38],"most":[41],"advanced":[42],"ones":[43],"12":[45],"dies,":[46],"12H,":[47],"H":[48],"refers":[49],"height)":[52],"through-silicon":[53],"via":[54],"(TSV)":[55],"connections":[56],"number":[59,83],"uses":[62],"increasing":[63],"2\u20134":[65],"6\u20138,":[67],"possibly":[69],"more":[70],"future.":[73],"With":[74],"so":[75],"many":[76],"dies":[79],"along":[80],"2.5D":[86,103,151,190,208],"package,":[87],"quality":[89],"reliability":[91,149,154,206],"is":[94,105,124,162,201],"critical.":[95],"Foremost,":[96],"thermo-mechanical(TM)":[98],"issues":[99],"when":[100],"integrated":[101],"important":[106],"must":[108],"be":[109,211],"comprehended":[110],"advance":[112],"at":[113],"chip":[116],"level.":[117],"The":[118],"main":[119],"purpose":[120],"this":[122],"study":[123,175],"present":[126],"evaluation":[127],"criteria":[128],"for":[129],"stand-alone":[131],"(namely":[134],"Proxy":[135,182],"package)":[137],"TSV":[139],"interposer":[140],"thick":[142],"substrate":[143],"PCB":[144],"that":[145,177,188,203],"can":[146],"emulate":[147],"package.":[152,191],"TM":[153],"characteristics":[155],"HBM2E":[157],"3":[159],"8H":[161],"discussed":[163],"various":[165],"perspectives":[166],"through":[167],"experiment,":[168],"physical":[169],"analysis,":[170],"field":[172],"prediction.":[173],"Our":[174],"showed":[176],"stress":[179],"was":[184],"10.97%":[185],"higher":[186],"than":[187],"Through":[192],"acceleration":[193],"factor":[194],"(AF)":[195],"analysis":[196],"refer":[197],"JESD94,":[199],"it":[200],"expected":[202],"TC":[205,217],"could":[210],"explained":[212],"by":[213],"proxy":[215],"evaluation.":[218]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":2}],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}