{"id":"https://openalex.org/W4396949093","doi":"https://doi.org/10.1109/irps48228.2024.10529408","title":"Experimental Segmentation of Vertical Charge Loss Mechanisms in Charge Trap-Based 3D NAND Arrays","display_name":"Experimental Segmentation of Vertical Charge Loss Mechanisms in Charge Trap-Based 3D NAND Arrays","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949093","doi":"https://doi.org/10.1109/irps48228.2024.10529408"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529408","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529408","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5008691003","display_name":"Luca Chiavarone","orcid":null},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"L. Chiavarone","raw_affiliation_strings":["NAND Technology Development Micron Technology, Inc.,Boise,ID,USA,83716"],"affiliations":[{"raw_affiliation_string":"NAND Technology Development Micron Technology, Inc.,Boise,ID,USA,83716","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086624969","display_name":"Gianluca Nicosia","orcid":"https://orcid.org/0000-0002-3200-1134"},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. Nicosia","raw_affiliation_strings":["NAND Technology Development Micron Technology, Inc.,Boise,ID,USA,83716"],"affiliations":[{"raw_affiliation_string":"NAND Technology Development Micron Technology, Inc.,Boise,ID,USA,83716","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089261401","display_name":"Niccol\u00f2 Righetti","orcid":null},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"N. Righetti","raw_affiliation_strings":["NAND Technology Development Micron Technology, Inc.,Boise,ID,USA,83716"],"affiliations":[{"raw_affiliation_string":"NAND Technology Development Micron Technology, Inc.,Boise,ID,USA,83716","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100675437","display_name":"Yan Dong","orcid":"https://orcid.org/0000-0001-8691-0782"},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. Dong","raw_affiliation_strings":["NAND Technology Development Micron Technology, Inc.,Boise,ID,USA,83716"],"affiliations":[{"raw_affiliation_string":"NAND Technology Development Micron Technology, Inc.,Boise,ID,USA,83716","institution_ids":["https://openalex.org/I11912373"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5008691003"],"corresponding_institution_ids":["https://openalex.org/I11912373"],"apc_list":null,"apc_paid":null,"fwci":0.8878,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.72994485,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.7574162483215332},{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.7519943714141846},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.6948343515396118},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.6861310005187988},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5039562582969666},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.43978917598724365},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.43367999792099},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4121952950954437},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.37641605734825134},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.36430788040161133},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.33093518018722534},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3001801073551178},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.23654603958129883},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.14272186160087585},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.12739324569702148}],"concepts":[{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.7574162483215332},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.7519943714141846},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.6948343515396118},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.6861310005187988},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5039562582969666},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.43978917598724365},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.43367999792099},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4121952950954437},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37641605734825134},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.36430788040161133},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.33093518018722534},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3001801073551178},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23654603958129883},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.14272186160087585},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.12739324569702148},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529408","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529408","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W2001623355","https://openalex.org/W2068708188","https://openalex.org/W2107707342","https://openalex.org/W2171577885","https://openalex.org/W2245555755","https://openalex.org/W2524846051","https://openalex.org/W2544022642","https://openalex.org/W2949396629","https://openalex.org/W2966727836","https://openalex.org/W3093982999","https://openalex.org/W3106453698","https://openalex.org/W3162489493","https://openalex.org/W4225295251","https://openalex.org/W4380302652"],"related_works":["https://openalex.org/W2054139911","https://openalex.org/W1577524679","https://openalex.org/W2162027152","https://openalex.org/W4230869547","https://openalex.org/W2489439822","https://openalex.org/W3165307257","https://openalex.org/W2515312339","https://openalex.org/W2145098804","https://openalex.org/W4237143391","https://openalex.org/W4391183748"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"provide":[4],"a":[5,77,106],"detailed":[6],"characterization":[7],"and":[8,36,62],"modeling":[9],"of":[10,20,32,52,96,112],"the":[11,16,45,50,67,89,94,101,110],"physical":[12,69,98],"mechanisms":[13,70],"responsible":[14],"for":[15,44,66,93],"vertical":[17],"loss":[18,39],"(VL)":[19],"charge":[21,23,33,38],"in":[22],"trap":[24],"(CT)":[25],"3D":[26,114],"NAND":[27,115],"flash":[28],"arrays.":[29],"The":[30],"contributions":[31],"detrapping":[34],"(DT)":[35],"storage":[37],"(SCL)":[40],"are":[41,105],"experimentally":[42],"separated":[43],"first":[46],"time.":[47],"By":[48],"studying":[49],"dependence":[51],"SCL":[53],"activation":[54],"energy":[55],"on":[56],"program":[57],"/":[58],"erase":[59],"cycling":[60],"dose":[61],"programmed":[63],"level,":[64],"evidence":[65],"key":[68],"contributing":[71],"to":[72,86,100],"it":[73],"is":[74,82],"provided.":[75],"Finally,":[76],"simple":[78],"yet":[79],"effective":[80],"model":[81],"devised":[83],"which":[84],"allows":[85],"accurately":[87],"reproduce":[88],"VL":[90],"transients,":[91],"accounting":[92],"contribution":[95],"each":[97],"mechanism":[99],"retention":[102],"loss.":[103],"Results":[104],"step":[107],"ahead":[108],"towards":[109],"understanding":[111],"CT":[113],"data":[116],"retention.":[117]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}