{"id":"https://openalex.org/W4396949195","doi":"https://doi.org/10.1109/irps48228.2024.10529395","title":"A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions","display_name":"A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949195","doi":"https://doi.org/10.1109/irps48228.2024.10529395"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529395","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529395","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059487742","display_name":"Karansingh Thakor","orcid":null},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Karansingh Thakor","raw_affiliation_strings":["Indian Institute of Technology Bombay,Department of Electrical Engineering,Mumbai,India,400076"],"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Bombay,Department of Electrical Engineering,Mumbai,India,400076","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080209707","display_name":"Payel Chatterjee","orcid":"https://orcid.org/0000-0003-2305-5939"},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Payel Chatterjee","raw_affiliation_strings":["Indian Institute of Technology Bombay,Department of Electrical Engineering,Mumbai,India,400076"],"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Bombay,Department of Electrical Engineering,Mumbai,India,400076","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057107600","display_name":"Souvik Mahapatra","orcid":"https://orcid.org/0000-0002-4516-766X"},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Souvik Mahapatra","raw_affiliation_strings":["Indian Institute of Technology Bombay,Department of Electrical Engineering,Mumbai,India,400076"],"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Bombay,Department of Electrical Engineering,Mumbai,India,400076","institution_ids":["https://openalex.org/I162827531"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5059487742"],"corresponding_institution_ids":["https://openalex.org/I162827531"],"apc_list":null,"apc_paid":null,"fwci":1.9887,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.8638252,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6227080225944519},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.4795105755329132},{"id":"https://openalex.org/keywords/kinetics","display_name":"Kinetics","score":0.42103520035743713},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38703039288520813},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.33146393299102783},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.327126681804657},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.26173484325408936},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22985094785690308}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6227080225944519},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4795105755329132},{"id":"https://openalex.org/C148898269","wikidata":"https://www.wikidata.org/wiki/Q1108792","display_name":"Kinetics","level":2,"score":0.42103520035743713},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38703039288520813},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.33146393299102783},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.327126681804657},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.26173484325408936},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22985094785690308},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529395","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529395","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/2","display_name":"Zero hunger","score":0.4399999976158142}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2979411722","https://openalex.org/W2980181853","https://openalex.org/W3011734232","https://openalex.org/W3037038174","https://openalex.org/W4285262991","https://openalex.org/W4312051075","https://openalex.org/W4313528880","https://openalex.org/W4376606651","https://openalex.org/W4376606762","https://openalex.org/W4385061607","https://openalex.org/W4387250207","https://openalex.org/W4393217864"],"related_works":["https://openalex.org/W4387497383","https://openalex.org/W2948807893","https://openalex.org/W2778153218","https://openalex.org/W2748952813","https://openalex.org/W1531601525","https://openalex.org/W4391375266","https://openalex.org/W2935759653","https://openalex.org/W2078814861","https://openalex.org/W2527526854","https://openalex.org/W2351710596"],"abstract_inverted_index":{"Sentaurus":[0],"TCAD":[1],"is":[2,22],"enabled":[3],"to":[4,9,59,72,103],"simulate":[5],"parametric":[6],"shift":[7],"due":[8,58],"BTI":[10,27,60],"and":[11,15,35,37,46,52,61,84,91,116],"HCD":[12,38,63],"in":[13,66],"p-":[14],"n-":[16],"GAA":[17],"SNS":[18],"FETs.":[19],"The":[20,55,110],"framework":[21,71,102],"calibrated":[23],"using":[24],"ultra-fast":[25],"measured":[26],"kinetics":[28,39],"at":[29,40,78],"different":[30,41],"V":[31,42,47,80],"<inf":[32,43,48,81],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[33,44,49,82],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">G</inf>":[34,45],"T,":[36],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">D</inf>":[50],"during":[51],"after":[53],"stress.":[54],"isolated":[56],"contributions":[57],"intrinsic":[62],"are":[64,96,118],"used":[65],"a":[67],"cycle-by-cycle":[68,108],"circuit":[69,100],"simulation":[70],"determine":[73],"Ring":[74],"Oscillator":[75],"(RO)":[76],"degradation":[77,113],"various":[79],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DD</inf>":[83],"T.":[85],"Inverter-based":[86],"RO":[87,117],"under":[88],"Dynamic":[89],"Voltage":[90],"Frequency":[92],"Scaling":[93],"(DVFS)":[94],"conditions":[95],"simulated":[97],"by":[98],"the":[99,105],"aging":[101],"demonstrate":[104],"necessity":[106],"of":[107,114],"analysis.":[109],"End-of-Life":[111],"(EOL)":[112],"device":[115],"compared.":[119]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":6}],"updated_date":"2026-03-05T09:29:38.588285","created_date":"2025-10-10T00:00:00"}