{"id":"https://openalex.org/W4396949300","doi":"https://doi.org/10.1109/irps48228.2024.10529373","title":"Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs","display_name":"Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949300","doi":"https://doi.org/10.1109/irps48228.2024.10529373"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529373","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529373","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079950801","display_name":"Limeng Shi","orcid":null},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Limeng Shi","raw_affiliation_strings":["The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA"],"affiliations":[{"raw_affiliation_string":"The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076225678","display_name":"Jiashu Qian","orcid":null},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jiashu Qian","raw_affiliation_strings":["The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA"],"affiliations":[{"raw_affiliation_string":"The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021161161","display_name":"Michael Jin","orcid":"https://orcid.org/0000-0001-5182-2926"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael Jin","raw_affiliation_strings":["The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA"],"affiliations":[{"raw_affiliation_string":"The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026988689","display_name":"Monikuntala Bhattacharya","orcid":"https://orcid.org/0000-0002-0878-0975"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Monikuntala Bhattacharya","raw_affiliation_strings":["The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA"],"affiliations":[{"raw_affiliation_string":"The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028216693","display_name":"Hengyu Yu","orcid":"https://orcid.org/0000-0002-3299-8106"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hengyu Yu","raw_affiliation_strings":["The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA"],"affiliations":[{"raw_affiliation_string":"The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101147883","display_name":"Marvin H. White","orcid":null},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Marvin H. White","raw_affiliation_strings":["The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA"],"affiliations":[{"raw_affiliation_string":"The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060123137","display_name":"Anant Agarwal","orcid":"https://orcid.org/0000-0003-0228-8039"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Anant K. Agarwal","raw_affiliation_strings":["The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA"],"affiliations":[{"raw_affiliation_string":"The Ohio State University,Dept. of Electrical &#x0026; Computer Engineering,Columbus,Ohio,USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013620571","display_name":"Atsushi Shimbori","orcid":"https://orcid.org/0000-0003-3307-2775"},"institutions":[{"id":"https://openalex.org/I1292974536","display_name":"Ford Motor Company (United States)","ror":"https://ror.org/00g2tkw06","country_code":"US","type":"company","lineage":["https://openalex.org/I1292974536"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Atsushi Shimbori","raw_affiliation_strings":["Ford Motor Company,Dearborn,Michigan,USA","Ford Motor Company, Dearborn, Michigan, USA"],"affiliations":[{"raw_affiliation_string":"Ford Motor Company,Dearborn,Michigan,USA","institution_ids":["https://openalex.org/I1292974536"]},{"raw_affiliation_string":"Ford Motor Company, Dearborn, Michigan, USA","institution_ids":["https://openalex.org/I1292974536"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5079950801"],"corresponding_institution_ids":["https://openalex.org/I52357470"],"apc_list":null,"apc_paid":null,"fwci":1.9124,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.85833218,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.42730826139450073},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.42505955696105957},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.42073532938957214},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.36868536472320557},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.34639835357666016},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.34210216999053955},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3197404742240906},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3113822937011719},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.2111257016658783},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13632240891456604}],"concepts":[{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.42730826139450073},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.42505955696105957},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.42073532938957214},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.36868536472320557},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34639835357666016},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.34210216999053955},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3197404742240906},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3113822937011719},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.2111257016658783},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13632240891456604},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529373","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48228.2024.10529373","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.4099999964237213}],"awards":[],"funders":[{"id":"https://openalex.org/F4320307103","display_name":"Ford Motor Company","ror":"https://ror.org/00g2tkw06"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W2091749383","https://openalex.org/W2103100540","https://openalex.org/W3040603639","https://openalex.org/W3135918899","https://openalex.org/W3210632339","https://openalex.org/W4200380073","https://openalex.org/W4309995518","https://openalex.org/W4376606712","https://openalex.org/W4376606758","https://openalex.org/W4376606759","https://openalex.org/W4391491907","https://openalex.org/W4391493109","https://openalex.org/W4391603700"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2051487156","https://openalex.org/W2073681303","https://openalex.org/W2053286651","https://openalex.org/W2181743346","https://openalex.org/W2187401768","https://openalex.org/W2181413294","https://openalex.org/W2989452537","https://openalex.org/W2052122378","https://openalex.org/W2544423928"],"abstract_inverted_index":{"This":[0,67],"work":[1],"investigates":[2],"the":[3,28,53,61,64,72,95,114,120,123,133,136],"behavior":[4],"of":[5,22,63,79,97,116,125,135,139],"threshold":[6],"voltage":[7],"<tex":[8,19,41,80,89,98,127],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[9,20,42,56,81,90,99,128],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(\\mathbf{V}_{\\mathbf{th}})$</tex>":[10],",":[11],"subthreshold":[12],"swing":[13],"(SS),":[14],"and":[15,131],"interface":[16],"state":[17],"density":[18],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(\\mathbf{D}_{\\mathbf{it}})$</tex>":[21],"commercial":[23],"SiC":[24,102],"planar":[25],"MOSFETs":[26],"during":[27],"gate":[29,65,140],"oxide":[30,38,141],"burn-in":[31,117],"process.":[32],"The":[33,104],"results":[34],"indicate":[35],"that":[36],"prolonged":[37],"electric":[39],"field":[40],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(\\mathbf{E}_{\\mathbf{ox}})$</tex>":[43],"stress":[44,74],"can":[45],"lead":[46],"to":[47,70,86],"defect":[48],"generation":[49],"at":[50],"or":[51],"near":[52],"SiC/SiO":[54],"<inf":[55],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[57],"interface,":[58],"which":[59],"degrades":[60],"reliability":[62],"oxide.":[66],"study":[68],"aims":[69],"determine":[71],"critical":[73],"time":[75],"for":[76,84,113],"different":[77],"values":[78],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\mathbf{E}_{\\mathbf{ox}}$</tex>":[82],"(used":[83],"burn-in)":[85],"mitigate":[87],"excessive":[88],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\mathbf{V}_{\\mathbf{th}}$</tex>":[91,129],"shift":[92,130],"caused":[93],"by":[94],"increase":[96],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\mathbf{D}_{\\mathbf{it}}$</tex>":[100],"in":[101,108,119],"MOSFETs.":[103],"research":[105],"approach":[106],"employed":[107],"this":[109],"paper":[110],"offers":[111],"insights":[112],"optimization":[115],"techniques":[118],"industry,":[121],"with":[122],"objective":[124],"reducing":[126],"preventing":[132],"degradation":[134],"intrinsic":[137],"lifetime":[138],"while":[142],"ensuring":[143],"efficiency.":[144]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":4}],"updated_date":"2026-03-20T23:20:44.827607","created_date":"2025-10-10T00:00:00"}