{"id":"https://openalex.org/W4396980739","doi":"https://doi.org/10.1109/irps48228.2024.10529360","title":"Repetitive Pulse Testing for LDMOS Transistor Reliability","display_name":"Repetitive Pulse Testing for LDMOS Transistor Reliability","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396980739","doi":"https://doi.org/10.1109/irps48228.2024.10529360"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529360","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48228.2024.10529360","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100650140","display_name":"Tianjiao Liu","orcid":"https://orcid.org/0000-0002-6430-0163"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Tianjiao Liu","raw_affiliation_strings":["onsemi,Central Engineering,East Greenwich,RI,United States"],"affiliations":[{"raw_affiliation_string":"onsemi,Central Engineering,East Greenwich,RI,United States","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101422675","display_name":"Michael Cook","orcid":"https://orcid.org/0000-0002-9129-2242"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Michael Cook","raw_affiliation_strings":["onsemi,Central Engineering,East Greenwich,RI,United States"],"affiliations":[{"raw_affiliation_string":"onsemi,Central Engineering,East Greenwich,RI,United States","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110557600","display_name":"Chris Kendrick","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chris Kendrick","raw_affiliation_strings":["onsemi,Central Engineering,East Greenwich,RI,United States"],"affiliations":[{"raw_affiliation_string":"onsemi,Central Engineering,East Greenwich,RI,United States","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5100650140"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2225,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.4885885,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"P50.RT","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.9316235184669495},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6798816919326782},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6300066709518433},{"id":"https://openalex.org/keywords/pulse","display_name":"Pulse (music)","score":0.4935053586959839},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4893204867839813},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.47035932540893555},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4564944803714752},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4344842731952667},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3644176721572876},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.33034735918045044},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2759302258491516},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.19006690382957458},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13138574361801147},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.1169373095035553}],"concepts":[{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.9316235184669495},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6798816919326782},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6300066709518433},{"id":"https://openalex.org/C2780167933","wikidata":"https://www.wikidata.org/wiki/Q1550652","display_name":"Pulse (music)","level":3,"score":0.4935053586959839},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4893204867839813},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.47035932540893555},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4564944803714752},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4344842731952667},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3644176721572876},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.33034735918045044},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2759302258491516},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19006690382957458},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13138574361801147},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.1169373095035553},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529360","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48228.2024.10529360","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.800000011920929,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1976864395","https://openalex.org/W1980895576","https://openalex.org/W2046171074","https://openalex.org/W2093344187","https://openalex.org/W2096265612","https://openalex.org/W2098972453","https://openalex.org/W2102668288","https://openalex.org/W2109985292","https://openalex.org/W2135925441","https://openalex.org/W2160557949","https://openalex.org/W2169883292","https://openalex.org/W2539322879","https://openalex.org/W3171546356","https://openalex.org/W4247189428","https://openalex.org/W4256488421","https://openalex.org/W6640246201"],"related_works":["https://openalex.org/W2033512842","https://openalex.org/W4322734194","https://openalex.org/W4233600955","https://openalex.org/W2913665393","https://openalex.org/W2369695847","https://openalex.org/W3005535424","https://openalex.org/W2994319598","https://openalex.org/W2047067935","https://openalex.org/W1607054433","https://openalex.org/W2110842462"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"the":[3,27,32,50],"impact":[4],"of":[5,13],"hot-carrier":[6],"injection":[7],"due":[8],"to":[9,25],"repetitive":[10,51],"pulse":[11,52],"switching":[12,29],"lateral":[14],"DMOS":[15],"transistors":[16],"is":[17,23,58],"studied.":[18],"The":[19],"proposed":[20],"testing":[21],"technique":[22],"used":[24],"emulate":[26],"dynamic":[28],"conditions":[30,62],"and":[31,64],"transistor":[33],"reliability":[34],"characteristics":[35],"are":[36],"compared":[37],"with":[38],"traditional":[39],"DC":[40,61],"measurement":[41],"at":[42],"constant":[43],"gate/drain":[44],"voltages.":[45],"Experimental":[46],"data":[47],"shows":[48],"that":[49],"degradation":[53],"under":[54],"6.6V":[55],"drain":[56],"stress":[57],"between":[59],"two":[60],"(5.5V":[63],"6.6V).":[65]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}