{"id":"https://openalex.org/W4396949025","doi":"https://doi.org/10.1109/irps48228.2024.10529346","title":"Investigation of Read Disturb for Hf<sub>0.5</sub>Zr<sub>0.502</sub> Ferroelectric Field-Effect Transistors Based Neuromorphic Applications","display_name":"Investigation of Read Disturb for Hf<sub>0.5</sub>Zr<sub>0.502</sub> Ferroelectric Field-Effect Transistors Based Neuromorphic Applications","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949025","doi":"https://doi.org/10.1109/irps48228.2024.10529346"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529346","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48228.2024.10529346","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5062039431","display_name":"Xinze Li","orcid":"https://orcid.org/0000-0003-3513-209X"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xinze Li","raw_affiliation_strings":["College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047008067","display_name":"Yiqin Zeng","orcid":"https://orcid.org/0000-0002-8154-5939"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yiqin Zeng","raw_affiliation_strings":["College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024130793","display_name":"Yuxuan Wu","orcid":"https://orcid.org/0000-0002-1945-3670"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuxuan Wu","raw_affiliation_strings":["College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090304366","display_name":"Ying Sun","orcid":"https://orcid.org/0009-0005-1143-5928"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ying Sun","raw_affiliation_strings":["College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111110308","display_name":"Junru Qu","orcid":null},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junru Qu","raw_affiliation_strings":["College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033156782","display_name":"Chengji Jin","orcid":"https://orcid.org/0000-0002-8517-459X"},"institutions":[{"id":"https://openalex.org/I4210123185","display_name":"Zhejiang Lab","ror":"https://ror.org/02m2h7991","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210123185"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chengji Jin","raw_affiliation_strings":["Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121"],"affiliations":[{"raw_affiliation_string":"Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121","institution_ids":["https://openalex.org/I4210123185"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067117710","display_name":"Jiani Gu","orcid":"https://orcid.org/0000-0002-5876-9897"},"institutions":[{"id":"https://openalex.org/I4210123185","display_name":"Zhejiang Lab","ror":"https://ror.org/02m2h7991","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210123185"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiani Gu","raw_affiliation_strings":["Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121"],"affiliations":[{"raw_affiliation_string":"Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121","institution_ids":["https://openalex.org/I4210123185"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5098660381","display_name":"Rongzong Shern","orcid":null},"institutions":[{"id":"https://openalex.org/I4210123185","display_name":"Zhejiang Lab","ror":"https://ror.org/02m2h7991","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210123185"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rongzong Shern","raw_affiliation_strings":["Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121"],"affiliations":[{"raw_affiliation_string":"Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121","institution_ids":["https://openalex.org/I4210123185"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102688406","display_name":"Gaobo Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210123185","display_name":"Zhejiang Lab","ror":"https://ror.org/02m2h7991","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210123185"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Gaobo Lin","raw_affiliation_strings":["Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121"],"affiliations":[{"raw_affiliation_string":"Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121","institution_ids":["https://openalex.org/I4210123185"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031752129","display_name":"Dawei Gao","orcid":"https://orcid.org/0009-0002-7786-1506"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]},{"id":"https://openalex.org/I4210142504","display_name":"Semiconductor Manufacturing International (China)","ror":"https://ror.org/03tf9y485","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210142504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dawei Gao","raw_affiliation_strings":["College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000","Zhej iang ICsprout Semiconductor, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]},{"raw_affiliation_string":"Zhej iang ICsprout Semiconductor, Hangzhou, China","institution_ids":["https://openalex.org/I4210142504"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003619700","display_name":"Xiao Yu","orcid":"https://orcid.org/0000-0001-8769-521X"},"institutions":[{"id":"https://openalex.org/I4210123185","display_name":"Zhejiang Lab","ror":"https://ror.org/02m2h7991","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210123185"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiao Yu","raw_affiliation_strings":["Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121"],"affiliations":[{"raw_affiliation_string":"Research Center for Intelligent Chips, Zhejiang Lab,Hangzhou,China,311121","institution_ids":["https://openalex.org/I4210123185"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100443083","display_name":"Bing Chen","orcid":"https://orcid.org/0000-0001-5284-8618"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bing Chen","raw_affiliation_strings":["School of Microelectronics, Xidian University,Xi&#x0027;an,China,710071"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,Xi&#x0027;an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030512231","display_name":"Ran Cheng","orcid":"https://orcid.org/0000-0001-6143-7714"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ran Cheng","raw_affiliation_strings":["College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000"],"affiliations":[{"raw_affiliation_string":"College of Integrated Circuits, Zhejiang University,Hangzhou,China,310000","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055388927","display_name":"Genquan Han","orcid":"https://orcid.org/0000-0001-5140-4150"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Genquan Han","raw_affiliation_strings":["School of Microelectronics, Xidian University,Xi&#x0027;an,China,710071"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University,Xi&#x0027;an,China,710071","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":14,"corresponding_author_ids":["https://openalex.org/A5062039431"],"corresponding_institution_ids":["https://openalex.org/I76130692"],"apc_list":null,"apc_paid":null,"fwci":0.2225,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.48825975,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.4357115924358368},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.38184696435928345},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3714424967765808},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.36128926277160645},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3328478932380676},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.329278826713562},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.28972914814949036},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11182025074958801},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.10142779350280762}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.4357115924358368},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.38184696435928345},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3714424967765808},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36128926277160645},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3328478932380676},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.329278826713562},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.28972914814949036},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11182025074958801},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.10142779350280762}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529346","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48228.2024.10529346","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6200000047683716}],"awards":[{"id":"https://openalex.org/G1685178883","display_name":null,"funder_award_id":"LDQ24F040001,LZ23F040001","funder_id":"https://openalex.org/F4320338464","funder_display_name":"Natural Science Foundation of Zhejiang Province"},{"id":"https://openalex.org/G1802146839","display_name":null,"funder_award_id":"2023YFB4402303","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G2678394418","display_name":null,"funder_award_id":"226-2023-00004","funder_id":"https://openalex.org/F4320335787","funder_display_name":"Fundamental Research Funds for the Central Universities"}],"funders":[{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null},{"id":"https://openalex.org/F4320335787","display_name":"Fundamental Research Funds for the Central Universities","ror":null},{"id":"https://openalex.org/F4320338464","display_name":"Natural Science Foundation of Zhejiang Province","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1565621290","https://openalex.org/W1587276678","https://openalex.org/W2140105855","https://openalex.org/W2583357209","https://openalex.org/W3169444273","https://openalex.org/W3200826224","https://openalex.org/W4311453553","https://openalex.org/W4312398808","https://openalex.org/W4320713281","https://openalex.org/W4376606722","https://openalex.org/W4390097232"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"the":[3,13,18,50,61,68,73,78,96,106,130,134,145,149,163,175,180],"impact":[4],"of":[5,12,22,75,168],"read":[6,97,169,176],"scheme":[7,170],"together":[8],"with":[9,39],"polarization":[10],"state":[11],"ferroelectric":[14],"(FE)":[15],"domains":[16,132],"on":[17],"interface":[19],"trap":[20,62],"behavior":[21],"FeFETs":[23],"for":[24,49,103],"NOR":[25],"array":[26],"applications":[27],"were":[28,45],"investigated.":[29],"Hf<inf":[30],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[31,33,35,57,90,110,117],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">0.5</inf>Zr<inf":[32],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">0.5</inf>O<inf":[34],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[36],"(HZO)-based":[37],"FeFET":[38],"different":[40],"interfacial":[41],"layer":[42],"(IL)":[43],"treatments":[44],"fabricated":[46],"and":[47,128,141,159],"used":[48,160],"analysis.":[51],"Generally,":[52],"as":[53],"gate":[54,127],"voltage":[55,88,108],"<tex":[56,89,109,116],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$V$</tex>":[58],"G":[59],"increases,":[60],"energy":[63],"will":[64,119],"move":[65],"closer":[66],"to":[67,94,121,143,161,173],"Fermi":[69],"energy,":[70],"which":[71],"increases":[72],"occurrence":[74],"trapping/de-trapping":[76],"at":[77,105],"transistor":[79],"interface.":[80],"Furthermore,":[81],"it":[82],"is":[83,171],"found":[84],"that":[85],"higher":[86,115],"drain":[87,135],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$V_{D}$</tex>":[91,118],"can":[92,137],"help":[93],"suppress":[95],"operation":[98],"induced":[99],"IL":[100],"degradation,":[101],"especially":[102],"devices":[104],"low-threshold":[107],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$V_{th}$</tex>":[111],"(LVT)":[112],"state.":[113],"Since":[114],"lead":[120],"a":[122],"reverse":[123],"electric":[124],"field":[125],"between":[126],"drain,":[129],"FE":[131],"near":[133],"junction":[136],"be":[138],"negatively":[139],"switched":[140],"helps":[142],"repel":[144],"electrons":[146],"captured":[147],"by":[148],"acceptor-like":[150],"traps.":[151],"An":[152],"experimentally":[153],"calibrated":[154],"TCAD":[155],"simulation":[156],"was":[157],"constructed":[158],"support":[162],"theoretical":[164],"explanation.":[165],"Careful":[166],"design":[167],"necessary":[172],"optimize":[174],"disturb":[177],"issues":[178],"in":[179],"FeFET-based":[181],"memory":[182],"arrays.":[183]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}