{"id":"https://openalex.org/W4396949102","doi":"https://doi.org/10.1109/irps48228.2024.10529309","title":"The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs","display_name":"The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs","publication_year":2024,"publication_date":"2024-04-14","ids":{"openalex":"https://openalex.org/W4396949102","doi":"https://doi.org/10.1109/irps48228.2024.10529309"},"language":"en","primary_location":{"id":"doi:10.1109/irps48228.2024.10529309","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48228.2024.10529309","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056910024","display_name":"D. Nergui","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"D. Nergui","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002779288","display_name":"Mehdi Hosseinzadeh","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Hosseinzadeh","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073283541","display_name":"Y. A. Mensah","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. A. Mensah","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085308303","display_name":"Hyeyeon Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. P. Lee","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110121715","display_name":"Delwyn G. Sam","orcid":"https://orcid.org/0009-0007-0600-5602"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. G. Sam","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056239229","display_name":"K. Li","orcid":"https://orcid.org/0000-0002-6704-3991"},"institutions":[{"id":"https://openalex.org/I2250955327","display_name":"Huawei Technologies (China)","ror":"https://ror.org/00cmhce21","country_code":"CN","type":"company","lineage":["https://openalex.org/I2250955327"]},{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["CN","US"],"is_corresponding":false,"raw_author_name":"K. Li","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Vanderbilt University, Nashville,\nTN 37235 USA","HUAWEI, Shenzhen, Guangdong, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Vanderbilt University, Nashville,\nTN 37235 USA","institution_ids":["https://openalex.org/I200719446"]},{"raw_affiliation_string":"HUAWEI, Shenzhen, Guangdong, China","institution_ids":["https://openalex.org/I2250955327"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009879848","display_name":"En Xia Zhang","orcid":"https://orcid.org/0000-0002-8021-2411"},"institutions":[{"id":"https://openalex.org/I106165777","display_name":"University of Central Florida","ror":"https://ror.org/036nfer12","country_code":"US","type":"education","lineage":["https://openalex.org/I106165777"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. X. Zhang","raw_affiliation_strings":["University of Central Florida,Department of Electrical and Computer Engineering,Orlando,FL,USA,32816"],"affiliations":[{"raw_affiliation_string":"University of Central Florida,Department of Electrical and Computer Engineering,Orlando,FL,USA,32816","institution_ids":["https://openalex.org/I106165777"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049822123","display_name":"Daniel M. Fleetwood","orcid":"https://orcid.org/0000-0003-4257-7142"},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. M. Fleetwood","raw_affiliation_strings":["Vanderbilt University,Department of Electrical and Computer Engineering,Nashville,TN,USA,37235"],"affiliations":[{"raw_affiliation_string":"Vanderbilt University,Department of Electrical and Computer Engineering,Nashville,TN,USA,37235","institution_ids":["https://openalex.org/I200719446"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5073899315","display_name":"John D. Cressler","orcid":"https://orcid.org/0000-0001-8268-5135"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John D. Cressler","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5056910024"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":0.2307,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.4889411,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7716478109359741},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7348870038986206},{"id":"https://openalex.org/keywords/ionizing-radiation","display_name":"Ionizing radiation","score":0.6747153997421265},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.6608900427818298},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.6024922132492065},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5366363525390625},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.5024628639221191},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.48451584577560425},{"id":"https://openalex.org/keywords/silicon-germanium","display_name":"Silicon-germanium","score":0.4757123589515686},{"id":"https://openalex.org/keywords/germanium","display_name":"Germanium","score":0.4715160131454468},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.47062233090400696},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.45776301622390747},{"id":"https://openalex.org/keywords/irradiation","display_name":"Irradiation","score":0.42538726329803467},{"id":"https://openalex.org/keywords/mixed-mode","display_name":"Mixed mode","score":0.4253443777561188},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.41812998056411743},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.38915085792541504},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36722731590270996},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.19463959336280823},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.16836950182914734},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11742734909057617},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.0834694504737854},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.07606521248817444}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7716478109359741},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7348870038986206},{"id":"https://openalex.org/C18231593","wikidata":"https://www.wikidata.org/wiki/Q186161","display_name":"Ionizing radiation","level":3,"score":0.6747153997421265},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6608900427818298},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6024922132492065},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5366363525390625},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.5024628639221191},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.48451584577560425},{"id":"https://openalex.org/C2780389399","wikidata":"https://www.wikidata.org/wiki/Q367849","display_name":"Silicon-germanium","level":3,"score":0.4757123589515686},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.4715160131454468},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.47062233090400696},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.45776301622390747},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.42538726329803467},{"id":"https://openalex.org/C2986550218","wikidata":"https://www.wikidata.org/wiki/Q6883855","display_name":"Mixed mode","level":2,"score":0.4253443777561188},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.41812998056411743},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.38915085792541504},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36722731590270996},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19463959336280823},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.16836950182914734},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11742734909057617},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0834694504737854},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.07606521248817444},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48228.2024.10529309","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48228.2024.10529309","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5299999713897705}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1970508653","https://openalex.org/W2000845792","https://openalex.org/W2026869690","https://openalex.org/W2067357269","https://openalex.org/W2071892844","https://openalex.org/W2083354589","https://openalex.org/W2094151748","https://openalex.org/W2101551623","https://openalex.org/W2131271035","https://openalex.org/W2142110960","https://openalex.org/W2146685087","https://openalex.org/W2162300561","https://openalex.org/W2169320926","https://openalex.org/W2537721720","https://openalex.org/W2546200572","https://openalex.org/W2583552138","https://openalex.org/W2778631497","https://openalex.org/W4225910685","https://openalex.org/W4298141447"],"related_works":["https://openalex.org/W1567282658","https://openalex.org/W2393767093","https://openalex.org/W112868940","https://openalex.org/W2370543964","https://openalex.org/W1169114565","https://openalex.org/W3151307272","https://openalex.org/W1013142806","https://openalex.org/W2102511360","https://openalex.org/W2066462051","https://openalex.org/W3212033888"],"abstract_inverted_index":{"The":[0],"impact":[1],"of":[2,8],"device":[3],"scaling":[4],"on":[5],"the":[6,27,34,52,59,62,65],"effects":[7],"mixed-mode":[9,48,74],"electrical":[10],"stress":[11],"and":[12,64],"ionizing":[13],"radiation":[14,39,70],"is":[15],"assessed":[16],"for":[17],"third-and":[18],"fourth-generation":[19,35,66],"silicon-germanium":[20],"heterojunction":[21],"bipolar":[22],"transistors":[23],"(SiGe":[24],"HBTs).":[25],"When":[26],"devices":[28,53],"were":[29,54],"operating":[30,55],"in":[31,56],"forward-active":[32],"mode,":[33,58],"technology":[36,67],"showed":[37,68],"better":[38],"tolerance":[40,71],"but":[41,72],"worse":[42,69],"hot":[43],"carrier":[44],"degradation":[45],"due":[46],"to":[47],"stress.":[49],"However,":[50],"when":[51],"inverse-active":[57],"trend":[60],"was":[61],"opposite":[63],"less":[73],"degradation.":[75]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-26T23:08:49.675405","created_date":"2025-10-10T00:00:00"}