{"id":"https://openalex.org/W4225300648","doi":"https://doi.org/10.1109/irps48227.2022.9764602","title":"Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions","display_name":"Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225300648","doi":"https://doi.org/10.1109/irps48227.2022.9764602"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764602","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764602","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://hdl.handle.net/11380/1286814","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5037680445","display_name":"Lorenzo Benatti","orcid":"https://orcid.org/0000-0003-4182-7621"},"institutions":[{"id":"https://openalex.org/I4210161797","display_name":"Ferrari (Italy)","ror":"https://ror.org/05p859a12","country_code":"IT","type":"company","lineage":["https://openalex.org/I4210161797"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"Lorenzo Benatti","raw_affiliation_strings":["Dipartimento di Ingegneria \"Enzo Ferrari\",Modena,MO,Italy,41125"],"affiliations":[{"raw_affiliation_string":"Dipartimento di Ingegneria \"Enzo Ferrari\",Modena,MO,Italy,41125","institution_ids":["https://openalex.org/I4210161797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005663559","display_name":"Paolo Pavan","orcid":"https://orcid.org/0000-0001-5420-1797"},"institutions":[{"id":"https://openalex.org/I4210161797","display_name":"Ferrari (Italy)","ror":"https://ror.org/05p859a12","country_code":"IT","type":"company","lineage":["https://openalex.org/I4210161797"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Paolo Pavan","raw_affiliation_strings":["Dipartimento di Ingegneria \"Enzo Ferrari\",Modena,MO,Italy,41125"],"affiliations":[{"raw_affiliation_string":"Dipartimento di Ingegneria \"Enzo Ferrari\",Modena,MO,Italy,41125","institution_ids":["https://openalex.org/I4210161797"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5021479723","display_name":"Francesco Maria Puglisi","orcid":"https://orcid.org/0000-0001-6178-2614"},"institutions":[{"id":"https://openalex.org/I4210161797","display_name":"Ferrari (Italy)","ror":"https://ror.org/05p859a12","country_code":"IT","type":"company","lineage":["https://openalex.org/I4210161797"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Francesco Maria Puglisi","raw_affiliation_strings":["Dipartimento di Ingegneria \"Enzo Ferrari\",Modena,MO,Italy,41125"],"affiliations":[{"raw_affiliation_string":"Dipartimento di Ingegneria \"Enzo Ferrari\",Modena,MO,Italy,41125","institution_ids":["https://openalex.org/I4210161797"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5037680445"],"corresponding_institution_ids":["https://openalex.org/I4210161797"],"apc_list":null,"apc_paid":null,"fwci":1.9261,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.85144928,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"6","issue":null,"first_page":"P6","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.8313812017440796},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6399061679840088},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.616592288017273},{"id":"https://openalex.org/keywords/polarization","display_name":"Polarization (electrochemistry)","score":0.5204206109046936},{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.5056543350219727},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4747329652309418},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4604393541812897},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.453592985868454},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4360131621360779},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.43463727831840515},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.4304954707622528},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4121943712234497},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.33059635758399963},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.30220097303390503},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17418420314788818},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14340415596961975},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.09677821397781372},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.07884728908538818}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.8313812017440796},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6399061679840088},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.616592288017273},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.5204206109046936},{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.5056543350219727},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4747329652309418},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4604393541812897},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.453592985868454},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4360131621360779},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.43463727831840515},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4304954707622528},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4121943712234497},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.33059635758399963},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30220097303390503},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17418420314788818},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14340415596961975},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.09677821397781372},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.07884728908538818},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps48227.2022.9764602","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764602","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:iris.unimore.it:11380/1286814","is_oa":true,"landing_page_url":"https://hdl.handle.net/11380/1286814","pdf_url":null,"source":{"id":"https://openalex.org/S4306400718","display_name":"IRIS UNIMORE (University of Modena and Reggio Emilia)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I122346577","host_organization_name":"University of Modena and Reggio Emilia","host_organization_lineage":["https://openalex.org/I122346577"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":{"id":"pmh:oai:iris.unimore.it:11380/1286814","is_oa":true,"landing_page_url":"https://hdl.handle.net/11380/1286814","pdf_url":null,"source":{"id":"https://openalex.org/S4306400718","display_name":"IRIS UNIMORE (University of Modena and Reggio Emilia)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I122346577","host_organization_name":"University of Modena and Reggio Emilia","host_organization_lineage":["https://openalex.org/I122346577"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/conferenceObject"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W2009639336","https://openalex.org/W2075543070","https://openalex.org/W2081056165","https://openalex.org/W2346962696","https://openalex.org/W2618981230","https://openalex.org/W2680479899","https://openalex.org/W2757550265","https://openalex.org/W2809444943","https://openalex.org/W2810959858","https://openalex.org/W2888922166","https://openalex.org/W2922287307","https://openalex.org/W2936721054","https://openalex.org/W2964484716","https://openalex.org/W2974354593","https://openalex.org/W2977345187","https://openalex.org/W2984488049","https://openalex.org/W3100345272","https://openalex.org/W3102026881","https://openalex.org/W3108808778","https://openalex.org/W3137392152","https://openalex.org/W4200249040"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2899084033","https://openalex.org/W4230065958","https://openalex.org/W3012211048","https://openalex.org/W1972216760","https://openalex.org/W4382679712","https://openalex.org/W2012099480","https://openalex.org/W2383176656","https://openalex.org/W2138145138","https://openalex.org/W2071833063"],"abstract_inverted_index":{"Ferroelectric":[0],"emerging":[1],"memories":[2,45],"have":[3],"been":[4],"found":[5],"to":[6,76,139],"perfectly":[7],"act":[8],"as":[9],"ultra-low":[10],"power":[11],"synaptic":[12],"weights":[13],"but":[14],"require":[15],"a":[16,68],"deeper":[17],"investigation":[18],"before":[19],"their":[20],"actual":[21],"introduction":[22],"in":[23,58,84,127,133],"brain":[24],"inspired":[25],"computing":[26],"platforms.":[27],"In":[28,55],"particular,":[29],"the":[30,33,38,41,49,80,90,97,100,103,110,114,124,128,134,148,155,160,164,169,173],"understanding":[31],"of":[32,40,51,96,102,113,154,163,172],"physical":[34],"mechanisms":[35,82],"occurring":[36,83],"during":[37],"lifetime":[39,171],"ferroelectric":[42,129],"tunnel":[43],"junction":[44],"is":[46,120,142,145],"fundamental":[47],"for":[48,167],"development":[50],"reliable":[52],"neuromorphic":[53],"circuits.":[54],"this":[56,59],"respect,":[57],"work":[60],"we":[61],"combined":[62],"an":[63],"extended":[64],"stress/measure":[65],"sequence":[66],"and":[67,71,93,105,108],"newly":[69],"proposed":[70],"validated":[72],"small":[73],"signal":[74],"model":[75,88],"provide":[77],"insights":[78],"on":[79,159],"degradation":[81],"these":[85],"devices.":[86],"The":[87],"considers":[89],"known":[91],"voltage":[92],"frequency":[94],"dependence":[95],"material":[98],"properties,":[99],"impact":[101],"interface":[104],"bulk":[106],"traps,":[107],"separates":[109],"leakage":[111,136],"contributions":[112],"layers.":[115],"Results":[116],"reveal":[117],"that":[118,144],"reliability":[119],"ultimately":[121],"limited":[122],"by":[123],"defect":[125,140],"generation":[126],"with":[130,147],"stress.":[131],"Asymmetry":[132],"polarization-dependent":[135],"increase":[137],"(due":[138],"generation)":[141],"found,":[143],"associated":[146],"different":[149],"stages":[150],"(wake-up,":[151],"fatigue,":[152],"aging)":[153],"device":[156,174],"lifetime.":[157],"Suggestions":[158],"possible":[161],"optimization":[162],"pulse":[165],"design":[166],"improving":[168],"useful":[170],"are":[175],"also":[176],"reported.":[177]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2026-03-20T23:20:44.827607","created_date":"2025-10-10T00:00:00"}