{"id":"https://openalex.org/W4225317047","doi":"https://doi.org/10.1109/irps48227.2022.9764569","title":"Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage","display_name":"Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225317047","doi":"https://doi.org/10.1109/irps48227.2022.9764569"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764569","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764569","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058496475","display_name":"R. Zhang","orcid":"https://orcid.org/0009-0002-6217-9758"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Zhang","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061080865","display_name":"J. Liu","orcid":null},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Liu","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035445855","display_name":"Q. Li","orcid":null},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Q. Li","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066395291","display_name":"Subhash Pidaparthi","orcid":"https://orcid.org/0000-0002-6432-5010"},"institutions":[{"id":"https://openalex.org/I4210109418","display_name":"Redox Power Systems (United States)","ror":"https://ror.org/01pp7nc38","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109418"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Pidaparthi","raw_affiliation_strings":["NexGen Power Systems Inc,Santa Clara,USA","NexGen Power Systems Inc, Santa Clara, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NexGen Power Systems Inc,Santa Clara,USA","institution_ids":["https://openalex.org/I4210109418"]},{"raw_affiliation_string":"NexGen Power Systems Inc, Santa Clara, USA","institution_ids":["https://openalex.org/I4210109418"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083495592","display_name":"Andrew Edwards","orcid":"https://orcid.org/0000-0002-8697-9840"},"institutions":[{"id":"https://openalex.org/I4210109418","display_name":"Redox Power Systems (United States)","ror":"https://ror.org/01pp7nc38","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109418"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Edwards","raw_affiliation_strings":["NexGen Power Systems Inc,Santa Clara,USA","NexGen Power Systems Inc, Santa Clara, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NexGen Power Systems Inc,Santa Clara,USA","institution_ids":["https://openalex.org/I4210109418"]},{"raw_affiliation_string":"NexGen Power Systems Inc, Santa Clara, USA","institution_ids":["https://openalex.org/I4210109418"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043211571","display_name":"Cliff Drowley","orcid":null},"institutions":[{"id":"https://openalex.org/I4210109418","display_name":"Redox Power Systems (United States)","ror":"https://ror.org/01pp7nc38","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109418"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Drowley","raw_affiliation_strings":["NexGen Power Systems Inc,Santa Clara,USA","NexGen Power Systems Inc, Santa Clara, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NexGen Power Systems Inc,Santa Clara,USA","institution_ids":["https://openalex.org/I4210109418"]},{"raw_affiliation_string":"NexGen Power Systems Inc, Santa Clara, USA","institution_ids":["https://openalex.org/I4210109418"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100398026","display_name":"Yuxin Zhang","orcid":"https://orcid.org/0000-0002-2830-4159"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Y. Zhang","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA","institution_ids":["https://openalex.org/I859038795"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"4","issue":null,"first_page":"1","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/jfet","display_name":"JFET","score":0.9626204371452332},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.6206824779510498},{"id":"https://openalex.org/keywords/avalanche-breakdown","display_name":"Avalanche breakdown","score":0.6135092973709106},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5519425868988037},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.539371132850647},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5070209503173828},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5016777515411377},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.489032119512558},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.41748762130737305},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.41048765182495117},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.36677777767181396},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3538596034049988},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15905773639678955},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.1124035120010376}],"concepts":[{"id":"https://openalex.org/C2778484494","wikidata":"https://www.wikidata.org/wiki/Q385520","display_name":"JFET","level":5,"score":0.9626204371452332},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.6206824779510498},{"id":"https://openalex.org/C33652038","wikidata":"https://www.wikidata.org/wiki/Q175906","display_name":"Avalanche breakdown","level":4,"score":0.6135092973709106},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5519425868988037},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.539371132850647},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5070209503173828},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5016777515411377},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.489032119512558},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.41748762130737305},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.41048765182495117},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.36677777767181396},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3538596034049988},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15905773639678955},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1124035120010376},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps48227.2022.9764569","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764569","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:hub.hku.hk:10722/352286","is_oa":false,"landing_page_url":"https://hub.hku.hk/handle/10722/352286","pdf_url":null,"source":{"id":"https://openalex.org/S4377196271","display_name":"The HKU Scholars Hub (University of Hong Kong)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I889458895","host_organization_name":"University of Hong Kong","host_organization_lineage":["https://openalex.org/I889458895"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference_Paper"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7099999785423279,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W1966870368","https://openalex.org/W1971983837","https://openalex.org/W1999500767","https://openalex.org/W2034628329","https://openalex.org/W2039947207","https://openalex.org/W2071825867","https://openalex.org/W2092332957","https://openalex.org/W2148041774","https://openalex.org/W2152410844","https://openalex.org/W2329138937","https://openalex.org/W2461874365","https://openalex.org/W2566946734","https://openalex.org/W2584386114","https://openalex.org/W2588330291","https://openalex.org/W2785819831","https://openalex.org/W2801998649","https://openalex.org/W2809860004","https://openalex.org/W2810045006","https://openalex.org/W2895717736","https://openalex.org/W2899993476","https://openalex.org/W2900054133","https://openalex.org/W2903152615","https://openalex.org/W2957984160","https://openalex.org/W3038038542","https://openalex.org/W3038430480","https://openalex.org/W3045812610","https://openalex.org/W3064299085","https://openalex.org/W3095025325","https://openalex.org/W3135780422","https://openalex.org/W3135809443","https://openalex.org/W3136196431","https://openalex.org/W3137709430","https://openalex.org/W3173627594","https://openalex.org/W3183577321","https://openalex.org/W3209812439","https://openalex.org/W4205156769","https://openalex.org/W4205913288","https://openalex.org/W4206036220","https://openalex.org/W6805315443","https://openalex.org/W6806137539"],"related_works":["https://openalex.org/W2383027918","https://openalex.org/W1920421228","https://openalex.org/W2891458306","https://openalex.org/W2239116225","https://openalex.org/W1599954506","https://openalex.org/W4379534234","https://openalex.org/W2497579763","https://openalex.org/W2021118121","https://openalex.org/W2119969520","https://openalex.org/W2118054461"],"abstract_inverted_index":{"GaN":[0,28,41,51,81,137],"high-electron-mobility":[1],"transistors":[2],"(HEMTs)":[3],"are":[4],"known":[5],"to":[6,92,104,129],"have":[7,21],"no":[8],"avalanche":[9,17,58,121,145],"capability":[10,56],"and":[11,18,46,112,120,144],"insufficient":[12],"short-circuit":[13,19,55,84,119,143],"robustness.":[14],"Recently,":[15],"breakthrough":[16],"capabilities":[20],"been":[22],"experimentally":[23],"demonstrated":[24,53],"in":[25,43,115],"a":[26,36,67,74,88],"vertical":[27,136],"fin-channel":[29],"junction-gate":[30],"field-effect":[31],"transistor":[32],"(Fin-JFET),":[33],"which":[34],"shows":[35],"good":[37,54],"promise":[38],"for":[39],"using":[40],"devices":[42],"automotive":[44],"powertrains":[45],"electric":[47,109],"grids.":[48],"In":[49],"particular,":[50],"Fin-JFETs":[52],"at":[57,87],"breakdown":[59],"voltage":[60,90],"(BV":[61],"<inf":[62,94],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[63,95],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">AVA</inf>":[64,96],"),":[65],"with":[66],"failure-to-open-circuit":[68],"(FTO)":[69],"signature.":[70,152],"This":[71],"work":[72],"presents":[73],"comprehensive":[75],"device":[76],"physics-based":[77],"study":[78],"of":[79,134,142],"the":[80,106,116,131,135,140],"Fin-JFET":[82,117,138],"under":[83,118,139],"conditions,":[85],"particularly":[86],"bus":[89],"close":[91],"BV":[93],".":[97],"Mixed-mode":[98],"electrothermal":[99],"TCAD":[100],"simulations":[101],"were":[102],"performed":[103],"understand":[105,130],"carrier":[107],"dynamics,":[108],"field":[110],"distributions,":[111],"temperature":[113],"profiles":[114],"conditions.":[122],"The":[123],"results":[124],"provide":[125],"important":[126],"physical":[127],"references":[128],"unique":[132],"robustness":[133],"concurrence":[141],"as":[146,148],"well":[147],"its":[149],"desirable":[150],"FTO":[151]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":3}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}