{"id":"https://openalex.org/W4225332056","doi":"https://doi.org/10.1109/irps48227.2022.9764551","title":"Ferroelectric FET Threshold Voltage Optimization for Reliable In-Memory Computing","display_name":"Ferroelectric FET Threshold Voltage Optimization for Reliable In-Memory Computing","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225332056","doi":"https://doi.org/10.1109/irps48227.2022.9764551"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764551","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764551","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030362624","display_name":"Om Prakash","orcid":"https://orcid.org/0000-0003-1219-2700"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Om Prakash","raw_affiliation_strings":["Karlsruhe Institute of Technology,Germany","Karlsruhe Institute of Technology, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology,Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of Technology, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075633314","display_name":"Kai Ni","orcid":"https://orcid.org/0000-0002-3628-3431"},"institutions":[{"id":"https://openalex.org/I155173764","display_name":"Rochester Institute of Technology","ror":"https://ror.org/00v4yb702","country_code":"US","type":"education","lineage":["https://openalex.org/I155173764"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kai Ni","raw_affiliation_strings":["Rochester Institute of Technology,USA","Rochester Institute of Technology, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rochester Institute of Technology,USA","institution_ids":["https://openalex.org/I155173764"]},{"raw_affiliation_string":"Rochester Institute of Technology, USA","institution_ids":["https://openalex.org/I155173764"]}]},{"author_position":"last","author":{"id":null,"display_name":"Hussam Amrouch","orcid":null},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Germany","Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.652,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.8012093,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"24","issue":null,"first_page":"1","last_page":"10"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9973000288009644,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.6641679406166077},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4543038308620453},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.366321861743927},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.353353887796402},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18060854077339172},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.12427431344985962}],"concepts":[{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.6641679406166077},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4543038308620453},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.366321861743927},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.353353887796402},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18060854077339172},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.12427431344985962}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48227.2022.9764551","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764551","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.9100000262260437}],"awards":[],"funders":[{"id":"https://openalex.org/F4320337345","display_name":"Office of Naval Research","ror":"https://ror.org/00rk2pe57"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1889226263","https://openalex.org/W1968310982","https://openalex.org/W1987225468","https://openalex.org/W1998565749","https://openalex.org/W2036865524","https://openalex.org/W2047717019","https://openalex.org/W2057906278","https://openalex.org/W2065194515","https://openalex.org/W2087757714","https://openalex.org/W2102984088","https://openalex.org/W2119143252","https://openalex.org/W2568885332","https://openalex.org/W2786159202","https://openalex.org/W2787573708","https://openalex.org/W2806919649","https://openalex.org/W2889381837","https://openalex.org/W2906313120","https://openalex.org/W2988640543","https://openalex.org/W3033271249","https://openalex.org/W3038698523","https://openalex.org/W3039362986","https://openalex.org/W3090974145","https://openalex.org/W3167846368","https://openalex.org/W6639680632","https://openalex.org/W6646852246"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W2051487156","https://openalex.org/W2073681303","https://openalex.org/W2390279801","https://openalex.org/W2358668433","https://openalex.org/W4396701345","https://openalex.org/W2376932109","https://openalex.org/W2001405890","https://openalex.org/W2389214306"],"abstract_inverted_index":{"Ferroelectric":[0],"FET":[1],"(FeFET)":[2],"emerges":[3],"as":[4],"a":[5,60,129],"highly":[6],"promising":[7],"candidate":[8],"for":[9,71,78,97,112,143],"in-memory":[10,72,150],"computing":[11,73,151],"due":[12],"to":[13,66,86,92,145],"its":[14],"outstanding":[15],"performance,":[16],"superior":[17],"energy":[18],"efficiency":[19],"and":[20,123],"great":[21],"scalability.":[22],"For":[23],"FeFET,":[24],"generally":[25,50],"the":[26,30,33,46,80,89,95,115,120,124,140],"memory":[27],"window,":[28],"i.e.,":[29],"separation":[31],"between":[32],"two":[34],"threshold":[35],"voltage":[36],"(VTH)":[37],"states,":[38],"is":[39,84],"of":[40,45,63,149],"interest.":[41],"The":[42],"absolute":[43],"value":[44],"low-VTHand":[47],"high-VTHstates":[48],"are":[49],"not":[51],"scrutinized.":[52],"However,":[53],"in":[54,128],"this":[55],"work,":[56],"we":[57,106],"demonstrate":[58],"that":[59,77,103],"proper":[61],"engineering":[62],"VTHis":[64],"necessary":[65,85],"ensure":[67,146],"correct":[68],"array":[69],"operation":[70,148],"applications.":[74,152],"We":[75,138],"highlight":[76],"all":[79],"current-based":[81],"operations,":[82],"it":[83],"keep":[87],"both":[88],"VTHstates":[90],"positive":[91],"cut":[93],"off":[94],"leakage":[96],"grounded":[98],"unselected":[99],"cells.":[100],"To":[101],"reach":[102],"design":[104,110,141],"target,":[105],"systematically":[107],"evaluate":[108],"various":[109],"options":[111],"VTHengineering,":[113],"including":[114],"gate":[116],"metal":[117],"work":[118],"function,":[119],"body":[121],"bias,":[122],"buried":[125],"oxide":[126],"thickness,":[127],"fully-depleted":[130],"silicon-on-insulator":[131],"(FDSOI)":[132],"FeFET":[133],"using":[134],"calibrated":[135],"TCAD":[136],"simulations.":[137],"establish":[139],"guidelines":[142],"VTHengineering":[144],"successful":[147]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}