{"id":"https://openalex.org/W4225308014","doi":"https://doi.org/10.1109/irps48227.2022.9764548","title":"GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery","display_name":"GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225308014","doi":"https://doi.org/10.1109/irps48227.2022.9764548"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764548","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764548","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009612786","display_name":"Qihao Song","orcid":"https://orcid.org/0000-0003-1376-5814"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Qihao Song","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082418616","display_name":"Joseph P. Kozak","orcid":"https://orcid.org/0000-0002-4308-6815"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joseph P. Kozak","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103107103","display_name":"Yunwei Ma","orcid":"https://orcid.org/0000-0001-9934-0168"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yunwei Ma","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006957001","display_name":"Jingcun Liu","orcid":"https://orcid.org/0000-0002-6155-1450"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jingcun Liu","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003393009","display_name":"Ruizhe Zhang","orcid":"https://orcid.org/0000-0002-6937-7653"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ruizhe Zhang","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087513156","display_name":"R. V. Volkov","orcid":"https://orcid.org/0000-0002-4720-1913"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Roman Volkov","raw_affiliation_strings":["VisIC Technologies,Ness-Ziona,Israel","VisIC Technologies, Ness-Ziona, Israel"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VisIC Technologies,Ness-Ziona,Israel","institution_ids":[]},{"raw_affiliation_string":"VisIC Technologies, Ness-Ziona, Israel","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105125636","display_name":"Daniel J. Sherman","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Daniel Sherman","raw_affiliation_strings":["VisIC Technologies,Ness-Ziona,Israel","VisIC Technologies, Ness-Ziona, Israel"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VisIC Technologies,Ness-Ziona,Israel","institution_ids":[]},{"raw_affiliation_string":"VisIC Technologies, Ness-Ziona, Israel","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109856272","display_name":"Kurt V. Smith","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kurt V. Smith","raw_affiliation_strings":["VisIC Technologies,Ness-Ziona,Israel","VisIC Technologies, Ness-Ziona, Israel"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VisIC Technologies,Ness-Ziona,Israel","institution_ids":[]},{"raw_affiliation_string":"VisIC Technologies, Ness-Ziona, Israel","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039190082","display_name":"Wataru Saito","orcid":"https://orcid.org/0000-0001-9700-6713"},"institutions":[{"id":"https://openalex.org/I135598925","display_name":"Kyushu University","ror":"https://ror.org/00p4k0j84","country_code":"JP","type":"education","lineage":["https://openalex.org/I135598925"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Wataru Saito","raw_affiliation_strings":["Kyushu University,Research Institute for Applied Mechanics,Fukuoka,Japan","Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu University,Research Institute for Applied Mechanics,Fukuoka,Japan","institution_ids":["https://openalex.org/I135598925"]},{"raw_affiliation_string":"Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan","institution_ids":["https://openalex.org/I135598925"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089728227","display_name":"Yuhao Zhang","orcid":"https://orcid.org/0000-0001-6350-4861"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuhao Zhang","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.3018,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.90998043,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"10B.4","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/overvoltage","display_name":"Overvoltage","score":0.7571784257888794},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6752758622169495},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5726543664932251},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.5704514384269714},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5234255790710449},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5087741017341614},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4883968234062195},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.46970197558403015},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.42017343640327454},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40045028924942017},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15082663297653198},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09347930550575256}],"concepts":[{"id":"https://openalex.org/C15703209","wikidata":"https://www.wikidata.org/wiki/Q333883","display_name":"Overvoltage","level":3,"score":0.7571784257888794},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6752758622169495},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5726543664932251},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5704514384269714},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5234255790710449},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5087741017341614},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4883968234062195},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.46970197558403015},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.42017343640327454},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40045028924942017},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15082663297653198},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09347930550575256},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps48227.2022.9764548","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764548","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:hub.hku.hk:10722/352287","is_oa":false,"landing_page_url":"https://hub.hku.hk/handle/10722/352287","pdf_url":null,"source":{"id":"https://openalex.org/S4377196271","display_name":"The HKU Scholars Hub (University of Hong Kong)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I889458895","host_organization_name":"University of Hong Kong","host_organization_lineage":["https://openalex.org/I889458895"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference_Paper"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8899999856948853,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W928451670","https://openalex.org/W2092332957","https://openalex.org/W2510585614","https://openalex.org/W2536413091","https://openalex.org/W2940862711","https://openalex.org/W3024406559","https://openalex.org/W3039106329","https://openalex.org/W3095486223","https://openalex.org/W3135780422","https://openalex.org/W3135809443","https://openalex.org/W3138136198","https://openalex.org/W3159338737","https://openalex.org/W3159798341","https://openalex.org/W3160870809","https://openalex.org/W3186129878","https://openalex.org/W3209662515","https://openalex.org/W4200612131"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W2559825181","https://openalex.org/W2250343992","https://openalex.org/W3209950509","https://openalex.org/W3043337507","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W4220740305","https://openalex.org/W1905863001","https://openalex.org/W4205711580"],"abstract_inverted_index":{"The":[0],"overvoltage":[1,44,195,220],"and":[2,33,88,90,169,200],"surge":[3],"energy":[4],"robustness":[5,196],"of":[6,35,59,63,109,197,214],"GaN":[7,198],"power":[8],"high-electron-mobility":[9],"transistors":[10],"(HEMTs)":[11],"is":[12],"a":[13,56,148,153,177,187],"key":[14],"gap":[15],"recently":[16],"identified":[17],"by":[18,106],"the":[19,26,30,70,75,79,107,110,114,118,121,127,140,159,163,172,182,193,212,218,224],"JEDEC":[20],"JC-70.1":[21],"committee.":[22],"This":[23,190],"work":[24,191],"presents":[25],"first":[27],"study":[28],"on":[29],"parametric":[31,92,99],"shift":[32],"recovery":[34,125],"an":[36],"industrial":[37],"depletion-mode":[38],"metal-insulator-semiconductor":[39],"HEMT":[40],"(MIS-HEMT)":[41],"in":[42,83,113,126,142,186],"repetitive":[43,76,119],"switching":[45,54,77,221],"close":[46,222],"to":[47,61,103,139,184,223],"its":[48],"dynamic":[49,64,225],"breakdown":[50,65,226],"voltage.":[51,227],"In":[52,175],"each":[53],"cycle,":[55],"voltage":[57,66],"overshoot":[58],"up":[60],"90%":[62],"was":[67],"applied":[68],"during":[69],"device":[71,80,122,173,183,219],"turn-OFF":[72],"process.":[73],"As":[74],"prolongs,":[78],"showed":[81],"shifts":[82,93,100],"threshold":[84],"voltage,":[85],"saturation":[86],"current,":[87],"on-resistance,":[89],"these":[91],"saturated":[94],"after":[95],"1-million":[96],"cycles.":[97],"These":[98],"are":[101],"believed":[102],"be":[104],"induced":[105],"trapping":[108],"holes":[111],"generated":[112],"impact":[115],"ionization.":[116],"After":[117],"switching,":[120],"exhibited":[123],"slow":[124],"natural":[128],"state,":[129],"at":[130],"elevated":[131],"temperatures,":[132],"or":[133,152],"with":[134],"negative":[135],"gate":[136,150],"biases,":[137],"due":[138],"difficulty":[141],"hole":[143,160,215],"removal.":[144],"By":[145],"contrast,":[146],"applying":[147],"positive":[149,154],"bias":[151,156,180],"substrate":[155,179],"can":[157],"facilitate":[158],"migration":[161],"towards":[162],"two-dimensional-gas":[164],"(2DEG)":[165],"channel":[166],"for":[167,204,217],"recombination,":[168],"therefore,":[170],"accelerated":[171],"recovery.":[174],"particular,":[176],"50-V":[178],"allowed":[181],"recover":[185],"few":[188],"minutes.":[189],"shows":[192],"good":[194],"MIS-HEMTs":[199],"unveils":[201],"effective":[202],"methods":[203],"their":[205],"post-switching":[206],"recovery,":[207],"as":[208,210],"well":[209],"suggests":[211],"significance":[213],"dynamics":[216]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}