{"id":"https://openalex.org/W4225331215","doi":"https://doi.org/10.1109/irps48227.2022.9764540","title":"Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress","display_name":"Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225331215","doi":"https://doi.org/10.1109/irps48227.2022.9764540"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764540","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764540","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102724635","display_name":"Kookjin Lee","orcid":"https://orcid.org/0000-0002-9896-1090"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]},{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Kookjin Lee","raw_affiliation_strings":["KU Leuven,Department of Materials Science,Leuven,Belgium,3001","Imec, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KU Leuven,Department of Materials Science,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I99464096"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058263075","display_name":"B. Kaczer","orcid":"https://orcid.org/0000-0002-1484-4007"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Ben Kaczer","raw_affiliation_strings":["Imec,Leuven,Belgium,3001"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050420311","display_name":"Anastasiia Kruv","orcid":"https://orcid.org/0000-0002-0210-4941"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]},{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Anastasiia Kruv","raw_affiliation_strings":["KU Leuven,Department of Materials Science,Leuven,Belgium,3001","Imec, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KU Leuven,Department of Materials Science,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I99464096"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089143002","display_name":"Mario Gonz\u00e1lez","orcid":"https://orcid.org/0000-0003-4374-4854"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Mario Gonzalez","raw_affiliation_strings":["Imec,Leuven,Belgium,3001"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075183384","display_name":"Geert Eneman","orcid":"https://orcid.org/0000-0002-5849-3384"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Geert Eneman","raw_affiliation_strings":["Imec,Leuven,Belgium,3001"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011121354","display_name":"Oguzhan Orkut Okudur","orcid":"https://orcid.org/0000-0002-4790-7772"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Oguzhan Orkut Okudur","raw_affiliation_strings":["Imec,Leuven,Belgium,3001"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051359840","display_name":"Alexander Grill","orcid":"https://orcid.org/0000-0003-1615-1033"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Alexander Grill","raw_affiliation_strings":["Imec,Leuven,Belgium,3001"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068577719","display_name":"J. Franco","orcid":"https://orcid.org/0000-0002-7382-8605"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Jacopo Franco","raw_affiliation_strings":["Imec,Leuven,Belgium,3001"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009544942","display_name":"Andrea Vici","orcid":"https://orcid.org/0000-0002-3614-9590"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Andrea Vici","raw_affiliation_strings":["Imec,Leuven,Belgium,3001"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061087611","display_name":"R. Degraeve","orcid":"https://orcid.org/0000-0002-4609-5573"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Robin Degraeve","raw_affiliation_strings":["Imec,Leuven,Belgium,3001"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Imec,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5073310038","display_name":"Ingrid De Wolf","orcid":"https://orcid.org/0000-0003-3822-5953"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]},{"id":"https://openalex.org/I99464096","display_name":"KU Leuven","ror":"https://ror.org/05f950310","country_code":"BE","type":"education","lineage":["https://openalex.org/I99464096"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Ingrid De Wolf","raw_affiliation_strings":["KU Leuven,Department of Materials Science,Leuven,Belgium,3001","Imec, Leuven, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KU Leuven,Department of Materials Science,Leuven,Belgium,3001","institution_ids":["https://openalex.org/I99464096"]},{"raw_affiliation_string":"Imec, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":11,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.6379,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.53004929,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"10A.3","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8617016077041626},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.6289194226264954},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5843923091888428},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5706028938293457},{"id":"https://openalex.org/keywords/nanoindenter","display_name":"Nanoindenter","score":0.5692152976989746},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5517399907112122},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.5290055871009827},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.4853631258010864},{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.4718858003616333},{"id":"https://openalex.org/keywords/impact-ionization","display_name":"Impact ionization","score":0.45983168482780457},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.4226968586444855},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.41484445333480835},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.34479862451553345},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.34200239181518555},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.3378957509994507},{"id":"https://openalex.org/keywords/ionization","display_name":"Ionization","score":0.24335241317749023},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23273545503616333},{"id":"https://openalex.org/keywords/ion","display_name":"Ion","score":0.09049078822135925},{"id":"https://openalex.org/keywords/elastic-modulus","display_name":"Elastic modulus","score":0.08688035607337952},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.06066182255744934},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.05841761827468872}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8617016077041626},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6289194226264954},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5843923091888428},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5706028938293457},{"id":"https://openalex.org/C2780569836","wikidata":"https://www.wikidata.org/wiki/Q1306226","display_name":"Nanoindenter","level":3,"score":0.5692152976989746},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5517399907112122},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.5290055871009827},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4853631258010864},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.4718858003616333},{"id":"https://openalex.org/C32921249","wikidata":"https://www.wikidata.org/wiki/Q2001256","display_name":"Impact ionization","level":4,"score":0.45983168482780457},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4226968586444855},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.41484445333480835},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.34479862451553345},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34200239181518555},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.3378957509994507},{"id":"https://openalex.org/C198291218","wikidata":"https://www.wikidata.org/wiki/Q190382","display_name":"Ionization","level":3,"score":0.24335241317749023},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23273545503616333},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.09049078822135925},{"id":"https://openalex.org/C43486711","wikidata":"https://www.wikidata.org/wiki/Q192005","display_name":"Elastic modulus","level":2,"score":0.08688035607337952},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06066182255744934},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.05841761827468872},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps48227.2022.9764540","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764540","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:lirias2repo.kuleuven.be:20.500.12942/728235","is_oa":false,"landing_page_url":"https://lirias.kuleuven.be/handle/20.500.12942/728235","pdf_url":null,"source":{"id":"https://openalex.org/S4306401954","display_name":"Lirias (KU Leuven)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I99464096","host_organization_name":"KU Leuven","host_organization_lineage":["https://openalex.org/I99464096"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":"IEEE International Reliability Physics Symposium (IRPS), TX, Dallas, 27-31 March 2022","raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6299999952316284,"id":"https://metadata.un.org/sdg/6","display_name":"Clean water and sanitation"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1533965610","https://openalex.org/W1986770213","https://openalex.org/W2030607485","https://openalex.org/W2106276384","https://openalex.org/W2109163709","https://openalex.org/W2120693500","https://openalex.org/W2230060349","https://openalex.org/W2485848341","https://openalex.org/W2497595099","https://openalex.org/W2537814828","https://openalex.org/W2782496992","https://openalex.org/W2802976710","https://openalex.org/W2906164523","https://openalex.org/W3038519836","https://openalex.org/W3039641999","https://openalex.org/W3193695745","https://openalex.org/W6631895641"],"related_works":["https://openalex.org/W2019750744","https://openalex.org/W2613535449","https://openalex.org/W2051048385","https://openalex.org/W2104699544","https://openalex.org/W2027836115","https://openalex.org/W1995809631","https://openalex.org/W2162808514","https://openalex.org/W2546473172","https://openalex.org/W3160961382","https://openalex.org/W2065583541"],"abstract_inverted_index":{"Significant":[0],"enhancement":[1,77],"of":[2,25,39,78],"hot-carrier":[3,88,98],"degradation":[4,89,99],"and":[5,27,62,72,75,90,96,100],"time-dependent":[6,101],"dielectric":[7,102],"breakdown":[8,103],"by":[9,30],"mechanical":[10],"stress":[11,18,46,54],"was":[12,19,47],"observed":[13],"in":[14,22,59,69,82,85,94,104],"CMOS":[15],"FETs.":[16],"Mechanical":[17,53],"induced":[20,43],"locally":[21],"the":[23],"channels":[24],"p-":[26,61],"n-type":[28],"FETs":[29],"applying":[31],"a":[32,36,40,56],"vertical":[33],"load":[34],"with":[35,49],"diamond":[37],"tip":[38],"nanoindenter.":[41],"The":[42],"GPa":[44],"level":[45],"calculated":[48],"finite":[50],"element":[51],"modeling.":[52],"induces":[55],"piezoresistance":[57],"effect":[58],"both":[60],"n-":[63],"channels,":[64],"leading":[65],"to":[66],"an":[67],"increase":[68],"source/drain":[70],"leakage":[71],"drive":[73],"currents":[74],"drastic":[76],"impact":[79],"ionization.":[80],"This":[81],"turn":[83],"results":[84],"strongly":[86],"enhanced":[87,97],"hot-electron-induced":[91],"punch-through":[92],"effects":[93],"pFETs":[95],"nFETs.":[105]},"counts_by_year":[{"year":2022,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}