{"id":"https://openalex.org/W4225303527","doi":"https://doi.org/10.1109/irps48227.2022.9764514","title":"A High Voltage Tolerant Supply Clamp for ESD Protection in a 45-nm SOI Technology","display_name":"A High Voltage Tolerant Supply Clamp for ESD Protection in a 45-nm SOI Technology","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225303527","doi":"https://doi.org/10.1109/irps48227.2022.9764514"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764514","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101577578","display_name":"Shudong Huang","orcid":"https://orcid.org/0000-0002-1276-8696"},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shudong Huang","raw_affiliation_strings":["University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801","institution_ids":["https://openalex.org/I157725225"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103323832","display_name":"Srivatsan Parthasarathy","orcid":null},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Srivatsan Parthasarathy","raw_affiliation_strings":["Analog Devices, Inc,Wilmington,MA,USA","Analog Devices, Inc, Wilmington, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Analog Devices, Inc,Wilmington,MA,USA","institution_ids":["https://openalex.org/I117023288"]},{"raw_affiliation_string":"Analog Devices, Inc, Wilmington, MA, USA","institution_ids":["https://openalex.org/I117023288"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103467160","display_name":"Yuanzhong Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuanzhong Paul Zhou","raw_affiliation_strings":["Analog Devices, Inc,Wilmington,MA,USA","Analog Devices, Inc, Wilmington, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Analog Devices, Inc,Wilmington,MA,USA","institution_ids":["https://openalex.org/I117023288"]},{"raw_affiliation_string":"Analog Devices, Inc, Wilmington, MA, USA","institution_ids":["https://openalex.org/I117023288"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110613093","display_name":"Jean-Jacques Hajjar","orcid":null},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jean-Jacques Hajjar","raw_affiliation_strings":["Analog Devices, Inc,Wilmington,MA,USA","Analog Devices, Inc, Wilmington, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Analog Devices, Inc,Wilmington,MA,USA","institution_ids":["https://openalex.org/I117023288"]},{"raw_affiliation_string":"Analog Devices, Inc, Wilmington, MA, USA","institution_ids":["https://openalex.org/I117023288"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019748322","display_name":"Elyse Rosenbaum","orcid":"https://orcid.org/0000-0002-3919-9833"},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Elyse Rosenbaum","raw_affiliation_strings":["University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801","institution_ids":["https://openalex.org/I157725225"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"5C.3","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.8718795776367188},{"id":"https://openalex.org/keywords/clamp","display_name":"Clamp","score":0.8454755544662476},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6656705737113953},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6486954689025879},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.643728494644165},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5628455877304077},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5369915962219238},{"id":"https://openalex.org/keywords/voltage-clamp","display_name":"Voltage clamp","score":0.5328707098960876},{"id":"https://openalex.org/keywords/shunting","display_name":"Shunting","score":0.49840879440307617},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4309282898902893},{"id":"https://openalex.org/keywords/clamper","display_name":"Clamper","score":0.4223555028438568},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.41440510749816895},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4047693610191345},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3839097023010254},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3818555176258087},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2874348759651184},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2702706456184387},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.12002864480018616},{"id":"https://openalex.org/keywords/electrophysiology","display_name":"Electrophysiology","score":0.10083112120628357},{"id":"https://openalex.org/keywords/medicine","display_name":"Medicine","score":0.0891314148902893},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0846199095249176},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.067019522190094}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.8718795776367188},{"id":"https://openalex.org/C2776161997","wikidata":"https://www.wikidata.org/wiki/Q846600","display_name":"Clamp","level":3,"score":0.8454755544662476},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6656705737113953},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6486954689025879},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.643728494644165},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5628455877304077},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5369915962219238},{"id":"https://openalex.org/C100837961","wikidata":"https://www.wikidata.org/wiki/Q10290897","display_name":"Voltage clamp","level":3,"score":0.5328707098960876},{"id":"https://openalex.org/C197328160","wikidata":"https://www.wikidata.org/wiki/Q7505161","display_name":"Shunting","level":2,"score":0.49840879440307617},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4309282898902893},{"id":"https://openalex.org/C64881904","wikidata":"https://www.wikidata.org/wiki/Q825778","display_name":"Clamper","level":3,"score":0.4223555028438568},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.41440510749816895},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4047693610191345},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3839097023010254},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3818555176258087},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2874348759651184},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2702706456184387},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.12002864480018616},{"id":"https://openalex.org/C185263204","wikidata":"https://www.wikidata.org/wiki/Q1154774","display_name":"Electrophysiology","level":2,"score":0.10083112120628357},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0891314148902893},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0846199095249176},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.067019522190094},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C84111939","wikidata":"https://www.wikidata.org/wiki/Q5125465","display_name":"Clamping","level":2,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C126322002","wikidata":"https://www.wikidata.org/wiki/Q11180","display_name":"Internal medicine","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48227.2022.9764514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764514","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.800000011920929,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1528415616","https://openalex.org/W1529542507","https://openalex.org/W2011243677","https://openalex.org/W2102191716","https://openalex.org/W2111810081","https://openalex.org/W2541111439","https://openalex.org/W2765380653","https://openalex.org/W3110867248","https://openalex.org/W6786547582"],"related_works":["https://openalex.org/W1967972426","https://openalex.org/W2001153653","https://openalex.org/W2046430182","https://openalex.org/W4299816863","https://openalex.org/W2154271946","https://openalex.org/W2169305461","https://openalex.org/W1571396369","https://openalex.org/W2763943869","https://openalex.org/W1966802912","https://openalex.org/W1985232861"],"abstract_inverted_index":{"This":[0],"work":[1],"presents":[2],"a":[3,61,73],"high":[4],"voltage":[5],"tolerant":[6],"(HVT)":[7],"supply":[8],"clamp":[9,20,68,87],"for":[10,72],"ESD":[11,23,38],"protection,":[12],"in":[13,60],"which":[14],"the":[15,19,48,53,67,85,101],"current":[16,39],"drive":[17],"of":[18,91],"during":[21,30],"an":[22],"event":[24],"is":[25,41,58],"maximized":[26],"without":[27],"compromising":[28],"reliability":[29],"normal":[31],"operation.":[32],"Similar":[33],"to":[34,100],"prior":[35,102],"HVT":[36],"clamps,":[37],"shunting":[40],"provided":[42],"by":[43,80],"3":[44],"cascoded":[45],"NFETs":[46],"but":[47],"novel":[49],"trigger":[50],"circuit":[51],"optimizes":[52],"gate":[54],"bias.":[55],"The":[56],"design":[57],"implemented":[59],"45-nm":[62],"SOI":[63],"CMOS":[64],"technology":[65],"and":[66,82,93],"devices":[69],"are":[70],"sized":[71],"2-kV":[74],"HBM":[75],"protection":[76],"level.":[77],"As":[78],"evidenced":[79],"TLP":[81],"VFTLP":[83],"measurements,":[84],"new":[86],"offers":[88],"50%":[89],"reduction":[90],"on-resistance":[92],"0.6":[94],"V":[95],"lower":[96],"turn-on":[97],"voltage,":[98],"relative":[99],"art.":[103]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}