{"id":"https://openalex.org/W4225314485","doi":"https://doi.org/10.1109/irps48227.2022.9764496","title":"Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays","display_name":"Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225314485","doi":"https://doi.org/10.1109/irps48227.2022.9764496"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764496","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030657938","display_name":"Christian Bogner","orcid":"https://orcid.org/0000-0002-7017-2188"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN","DE","SG"],"is_corresponding":false,"raw_author_name":"Christian Bogner","raw_affiliation_strings":["TU Vienna,Institute for Microelectronics","Infineon Technologies AG, Munich","Institute for Microelectronics, TU Vienna"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TU Vienna,Institute for Microelectronics","institution_ids":["https://openalex.org/I4210090209","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Infineon Technologies AG, Munich","institution_ids":["https://openalex.org/I137594350"]},{"raw_affiliation_string":"Institute for Microelectronics, TU Vienna","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062594496","display_name":"Tibor Grasser","orcid":"https://orcid.org/0000-0001-6536-2238"},"institutions":[{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN","SG"],"is_corresponding":false,"raw_author_name":"Tibor Grasser","raw_affiliation_strings":["TU Vienna,Institute for Microelectronics","Institute for Microelectronics, TU Vienna"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TU Vienna,Institute for Microelectronics","institution_ids":["https://openalex.org/I4210090209","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Institute for Microelectronics, TU Vienna","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077464890","display_name":"Michael Waltl","orcid":"https://orcid.org/0000-0001-6042-759X"},"institutions":[{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN","SG"],"is_corresponding":false,"raw_author_name":"Michael Waltl","raw_affiliation_strings":["TU Vienna,Institute for Microelectronics","Institute for Microelectronics, TU Vienna"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TU Vienna,Institute for Microelectronics","institution_ids":["https://openalex.org/I4210090209","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Institute for Microelectronics, TU Vienna","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081937576","display_name":"H. Reisinger","orcid":"https://orcid.org/0000-0001-6776-349X"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hans Reisinger","raw_affiliation_strings":["Infineon Technologies AG,Munich","Infineon Technologies AG, Munich"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG,Munich","institution_ids":["https://openalex.org/I137594350"]},{"raw_affiliation_string":"Infineon Technologies AG, Munich","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5000945421","display_name":"Christian Schl\u00fcnder","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Christian Schlunder","raw_affiliation_strings":["Infineon Technologies AG,Munich","Infineon Technologies AG, Munich"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG,Munich","institution_ids":["https://openalex.org/I137594350"]},{"raw_affiliation_string":"Infineon Technologies AG, Munich","institution_ids":["https://openalex.org/I137594350"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.239,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.72813953,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"52","issue":null,"first_page":"1","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.7236400842666626},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7234477996826172},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7110648155212402},{"id":"https://openalex.org/keywords/flexibility","display_name":"Flexibility (engineering)","score":0.6403558254241943},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6342206001281738},{"id":"https://openalex.org/keywords/set","display_name":"Set (abstract data type)","score":0.5251184105873108},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4494646191596985},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42606574296951294},{"id":"https://openalex.org/keywords/ideal","display_name":"Ideal (ethics)","score":0.41228795051574707},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3804154396057129},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.18637529015541077},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15149158239364624},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1355428695678711},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.0899570882320404}],"concepts":[{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.7236400842666626},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7234477996826172},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7110648155212402},{"id":"https://openalex.org/C2780598303","wikidata":"https://www.wikidata.org/wiki/Q65921492","display_name":"Flexibility (engineering)","level":2,"score":0.6403558254241943},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6342206001281738},{"id":"https://openalex.org/C177264268","wikidata":"https://www.wikidata.org/wiki/Q1514741","display_name":"Set (abstract data type)","level":2,"score":0.5251184105873108},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4494646191596985},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42606574296951294},{"id":"https://openalex.org/C2776639384","wikidata":"https://www.wikidata.org/wiki/Q840396","display_name":"Ideal (ethics)","level":2,"score":0.41228795051574707},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3804154396057129},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.18637529015541077},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15149158239364624},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1355428695678711},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.0899570882320404},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C111472728","wikidata":"https://www.wikidata.org/wiki/Q9471","display_name":"Epistemology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48227.2022.9764496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764496","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.47999998927116394}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1491999247","https://openalex.org/W1592283839","https://openalex.org/W1608656848","https://openalex.org/W1971367461","https://openalex.org/W1979243431","https://openalex.org/W1983465425","https://openalex.org/W1988922865","https://openalex.org/W1989756405","https://openalex.org/W1992981913","https://openalex.org/W2001623355","https://openalex.org/W2016565894","https://openalex.org/W2025695811","https://openalex.org/W2037328774","https://openalex.org/W2121425010","https://openalex.org/W2122520074","https://openalex.org/W2153710771","https://openalex.org/W2155412678","https://openalex.org/W2157180100","https://openalex.org/W2170644629","https://openalex.org/W2621035395","https://openalex.org/W2621046702","https://openalex.org/W2977456222","https://openalex.org/W3106453698"],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W3024050170","https://openalex.org/W4293253840","https://openalex.org/W4378977321","https://openalex.org/W2967161359","https://openalex.org/W1976168335","https://openalex.org/W4308090481","https://openalex.org/W3211992815"],"abstract_inverted_index":{"For":[0],"the":[1,6,53,70,87,110,123],"design":[2],"of":[3,8,47,55,89,94,106],"reliable":[4],"ICs":[5],"application":[7],"accurate":[9],"transistor":[10,143],"aging":[11,24,88],"models":[12],"is":[13],"indispensable.":[14],"However,":[15],"especially":[16],"for":[17,149],"modern":[18],"deeply-scaled":[19],"technologies":[20],"modeling":[21,79],"NBTI":[22],"induced":[23],"poses":[25],"significant":[26],"challenges":[27],"as":[28,40,137,139,152],"transistors":[29,91],"can":[30,73],"not":[31],"be":[32,38,74],"characterized":[33],"individually":[34],"but":[35],"need":[36],"to":[37,85,108,119,141],"described":[39],"a":[41,48,56,78,100,116],"statistical":[42,71,95],"ensemble.":[43],"We":[44,76],"make":[45],"use":[46],"dedicated":[49],"array":[50],"structure":[51],"enabling":[52],"collection":[54],"large":[57],"data-set":[58,69],"at":[59],"reasonable":[60],"experimental":[61],"time.":[62],"Note":[63],"that":[64,128],"by":[65],"using":[66],"an":[67],"extensive":[68],"confidence":[72],"maximized.":[75],"present":[77],"approach":[80,98,130],"based":[81],"on":[82],"physical":[83],"considerations":[84],"describe":[86,109],"SRAM-sized":[90],"under":[92,104],"consideration":[93,105],"effects.":[96],"Our":[97],"applies":[99],"modified":[101],"defect-centric":[102],"model":[103],"RTN":[107],"time-dependent":[111],"Vthdistribution.":[112],"Furthermore,":[113],"we":[114,126],"introduce":[115],"simple":[117],"method":[118],"extract":[120],"parameters":[121],"describing":[122],"distribution.":[124],"Additionally,":[125],"show":[127],"our":[129],"provides":[131],"great":[132],"flexibility":[133],"regarding":[134],"stress":[135],"conditions":[136],"well":[138],"scalability":[140],"different":[142],"dimensions,":[144],"which":[145],"makes":[146],"it":[147],"ideal":[148],"applications":[150],"such":[151],"circuit":[153],"simulation.":[154]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}