{"id":"https://openalex.org/W4225314246","doi":"https://doi.org/10.1109/irps48227.2022.9764473","title":"Defects in 4H-SiC epilayers affecting device yield and reliability","display_name":"Defects in 4H-SiC epilayers affecting device yield and reliability","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225314246","doi":"https://doi.org/10.1109/irps48227.2022.9764473"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764473","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764473","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068528810","display_name":"Robert E. Stahlbush","orcid":"https://orcid.org/0000-0002-8477-1632"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Robert Stahlbush","raw_affiliation_strings":["Naval Research Laboratory,Washington,DC,USA","Naval Research Laboratory, Washington, DC, USA"],"affiliations":[{"raw_affiliation_string":"Naval Research Laboratory,Washington,DC,USA","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Naval Research Laboratory, Washington, DC, USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087851383","display_name":"Nadeemullah A. Mahadik","orcid":"https://orcid.org/0000-0002-6486-2860"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nadeemullah Mahadik","raw_affiliation_strings":["Naval Research Laboratory,Washington,DC,USA","Naval Research Laboratory, Washington, DC, USA"],"affiliations":[{"raw_affiliation_string":"Naval Research Laboratory,Washington,DC,USA","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Naval Research Laboratory, Washington, DC, USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016014334","display_name":"P. L. Bonanno","orcid":null},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peter Bonanno","raw_affiliation_strings":["Naval Research Laboratory,Washington,DC,USA","Naval Research Laboratory, Washington, DC, USA"],"affiliations":[{"raw_affiliation_string":"Naval Research Laboratory,Washington,DC,USA","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Naval Research Laboratory, Washington, DC, USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060432038","display_name":"Jake Soto","orcid":"https://orcid.org/0009-0003-0025-7105"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jake Soto","raw_affiliation_strings":["Naval Research Laboratory,Washington,DC,USA","Naval Research Laboratory, Washington, DC, USA"],"affiliations":[{"raw_affiliation_string":"Naval Research Laboratory,Washington,DC,USA","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Naval Research Laboratory, Washington, DC, USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037758041","display_name":"B. Odekirk","orcid":null},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bruce Odekirk","raw_affiliation_strings":["Naval Research Laboratory,Washington,DC,USA","Naval Research Laboratory, Washington, DC, USA"],"affiliations":[{"raw_affiliation_string":"Naval Research Laboratory,Washington,DC,USA","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Naval Research Laboratory, Washington, DC, USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072043921","display_name":"Woongje Sung","orcid":"https://orcid.org/0000-0003-0960-5973"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Woongje Sung","raw_affiliation_strings":["Naval Research Laboratory,Washington,DC,USA","Naval Research Laboratory, Washington, DC, USA"],"affiliations":[{"raw_affiliation_string":"Naval Research Laboratory,Washington,DC,USA","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Naval Research Laboratory, Washington, DC, USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5060123137","display_name":"Anant Agarwal","orcid":"https://orcid.org/0000-0003-0228-8039"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Anant Agarwal","raw_affiliation_strings":["Naval Research Laboratory,Washington,DC,USA","Naval Research Laboratory, Washington, DC, USA"],"affiliations":[{"raw_affiliation_string":"Naval Research Laboratory,Washington,DC,USA","institution_ids":["https://openalex.org/I1288214837"]},{"raw_affiliation_string":"Naval Research Laboratory, Washington, DC, USA","institution_ids":["https://openalex.org/I1288214837"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5068528810"],"corresponding_institution_ids":["https://openalex.org/I1288214837"],"apc_list":null,"apc_paid":null,"fwci":3.519,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.94604563,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"P65","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.995199978351593,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.9120879173278809},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8056282997131348},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.6727420687675476},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.6413999795913696},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5644721984863281},{"id":"https://openalex.org/keywords/yield","display_name":"Yield (engineering)","score":0.5277952551841736},{"id":"https://openalex.org/keywords/basal-plane","display_name":"Basal plane","score":0.4598267078399658},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.43985825777053833},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.33410507440567017},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.17543098330497742},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.06011161208152771}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.9120879173278809},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8056282997131348},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6727420687675476},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6413999795913696},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5644721984863281},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.5277952551841736},{"id":"https://openalex.org/C2994038127","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Basal plane","level":2,"score":0.4598267078399658},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.43985825777053833},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.33410507440567017},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.17543098330497742},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.06011161208152771},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48227.2022.9764473","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764473","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2019856065","https://openalex.org/W2030978707","https://openalex.org/W2045597494","https://openalex.org/W2053794197","https://openalex.org/W2064340025","https://openalex.org/W2068054670","https://openalex.org/W2072185291","https://openalex.org/W2078098601","https://openalex.org/W2086646643","https://openalex.org/W2117037876","https://openalex.org/W2302461183"],"related_works":["https://openalex.org/W1990495318","https://openalex.org/W2034592733","https://openalex.org/W2017645070","https://openalex.org/W2037561216","https://openalex.org/W1976083476","https://openalex.org/W2007768435","https://openalex.org/W2030334044","https://openalex.org/W2082807227","https://openalex.org/W2984097712","https://openalex.org/W2963996363"],"abstract_inverted_index":{"Forty":[0],"nine":[1],"silicon":[2],"carbide":[3],"150":[4],"mm":[5],"wafers":[6,35,41,55,73,95],"from":[7,37],"three":[8,38],"commercial":[9,81],"vendors":[10],"to":[11,22],"be":[12,106],"used":[13],"for":[14,80],"fabricating":[15],"MOSFETs":[16],"were":[17,36,52,63,77,89],"examined":[18],"by":[19,108],"UVPL":[20],"imaging":[21],"count":[23],"their":[24],"concentration":[25],"of":[26,66,71,84,93,99],"basal":[27],"plane":[28],"dislocations,":[29],"inclusions,":[30,85],"micropipes":[31,86],"and":[32,40,47,59,87],"trapezoids.":[33],"The":[34,54],"vendors,":[39],"with":[42,56,74],"10":[43,57],"um,":[44],"30":[45,60],"um":[46,49,58,61,76],"60":[48,75],"epitaxial":[50],"layers":[51],"evaluated.":[53,91],"epilayers":[62],"virtually":[64],"free":[65],"BPDs,":[67],"while":[68],"BPD":[69],"concentrations":[70],"the":[72,94],"too":[78],"high":[79],"use.":[82],"Concentrations":[83],"trapezoids":[88],"also":[90],"Most":[92],"had":[96],"acceptable":[97],"levels":[98],"these":[100],"defects,":[101],"but":[102],"device":[103],"yield":[104],"would":[105],"improved":[107],"more":[109],"consistently":[110],"having":[111],"low":[112],"concentrations.":[113]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2026-04-14T08:04:32.555800","created_date":"2025-10-10T00:00:00"}