{"id":"https://openalex.org/W4225297968","doi":"https://doi.org/10.1109/irps48227.2022.9764463","title":"Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses","display_name":"Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses","publication_year":2022,"publication_date":"2022-03-01","ids":{"openalex":"https://openalex.org/W4225297968","doi":"https://doi.org/10.1109/irps48227.2022.9764463"},"language":"en","primary_location":{"id":"doi:10.1109/irps48227.2022.9764463","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764463","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5082418616","display_name":"Joseph P. Kozak","orcid":"https://orcid.org/0000-0002-4308-6815"},"institutions":[{"id":"https://openalex.org/I2802946424","display_name":"Johns Hopkins University Applied Physics Laboratory","ror":"https://ror.org/029pp9z10","country_code":"US","type":"facility","lineage":["https://openalex.org/I145311948","https://openalex.org/I2802946424"]},{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Joseph P. Kozak","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Johns Hopkins University Applied Physics Laboratory, Laurel, MD, USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Johns Hopkins University Applied Physics Laboratory, Laurel, MD, USA","institution_ids":["https://openalex.org/I2802946424"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009612786","display_name":"Qihao Song","orcid":"https://orcid.org/0000-0003-1376-5814"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Qihao Song","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006957001","display_name":"Jingcun Liu","orcid":"https://orcid.org/0000-0002-6155-1450"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jingcun Liu","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003393009","display_name":"Ruizhe Zhang","orcid":"https://orcid.org/0000-0002-6937-7653"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ruizhe Zhang","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100429981","display_name":"Qiang Li","orcid":"https://orcid.org/0000-0002-5378-1424"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Qiang Li","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039190082","display_name":"Wataru Saito","orcid":"https://orcid.org/0000-0001-9700-6713"},"institutions":[{"id":"https://openalex.org/I135598925","display_name":"Kyushu University","ror":"https://ror.org/00p4k0j84","country_code":"JP","type":"education","lineage":["https://openalex.org/I135598925"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Wataru Saito","raw_affiliation_strings":["Kyushu University,Research Institute for Applied Mechanics,Fukuoka,Japan,816-8580"],"affiliations":[{"raw_affiliation_string":"Kyushu University,Research Institute for Applied Mechanics,Fukuoka,Japan,816-8580","institution_ids":["https://openalex.org/I135598925"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089728227","display_name":"Yuhao Zhang","orcid":"https://orcid.org/0000-0001-6350-4861"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuhao Zhang","raw_affiliation_strings":["Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA","institution_ids":["https://openalex.org/I859038795"]},{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5082418616"],"corresponding_institution_ids":["https://openalex.org/I2802946424","https://openalex.org/I859038795"],"apc_list":null,"apc_paid":null,"fwci":1.0924,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.6962963,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"106","issue":null,"first_page":"P22","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/overvoltage","display_name":"Overvoltage","score":0.7480074763298035},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7098448276519775},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6095414161682129},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6023468971252441},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.48147860169410706},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.47325757145881653},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4571388363838196},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42844358086586},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.4121648073196411},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13534554839134216},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09619241952896118}],"concepts":[{"id":"https://openalex.org/C15703209","wikidata":"https://www.wikidata.org/wiki/Q333883","display_name":"Overvoltage","level":3,"score":0.7480074763298035},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7098448276519775},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6095414161682129},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6023468971252441},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.48147860169410706},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.47325757145881653},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4571388363838196},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42844358086586},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.4121648073196411},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13534554839134216},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09619241952896118},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps48227.2022.9764463","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48227.2022.9764463","pdf_url":null,"source":{"id":"https://openalex.org/S4363605693","display_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:hub.hku.hk:10722/352494","is_oa":false,"landing_page_url":"https://hub.hku.hk/handle/10722/352494","pdf_url":null,"source":{"id":"https://openalex.org/S4377196271","display_name":"The HKU Scholars Hub (University of Hong Kong)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I889458895","host_organization_name":"University of Hong Kong","host_organization_lineage":["https://openalex.org/I889458895"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference_Paper"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9200000166893005,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W928451670","https://openalex.org/W2030212031","https://openalex.org/W2041714088","https://openalex.org/W2078204571","https://openalex.org/W2092332957","https://openalex.org/W2461874365","https://openalex.org/W2510585614","https://openalex.org/W2625176921","https://openalex.org/W2788013722","https://openalex.org/W2800880699","https://openalex.org/W2801059624","https://openalex.org/W2940862711","https://openalex.org/W2967945770","https://openalex.org/W3012121438","https://openalex.org/W3024406559","https://openalex.org/W3039106329","https://openalex.org/W3044090027","https://openalex.org/W3095486223","https://openalex.org/W3135780422","https://openalex.org/W3135809443","https://openalex.org/W3136196431","https://openalex.org/W3137709430","https://openalex.org/W3138136198","https://openalex.org/W3153030198","https://openalex.org/W3159338737","https://openalex.org/W3160870809","https://openalex.org/W3186129878","https://openalex.org/W3209662515","https://openalex.org/W3209812439","https://openalex.org/W4206036220","https://openalex.org/W7029066448"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W2559825181","https://openalex.org/W3209950509","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W4313611767","https://openalex.org/W2613044742","https://openalex.org/W4385217635"],"abstract_inverted_index":{"GaN":[0,42,164],"high":[1],"electron":[2],"mobility":[3],"transistors":[4],"(HEMTs)":[5],"have":[6],"limited":[7],"avalanche":[8],"capability":[9],"and":[10,35,73,109,133,148],"withstand":[11],"the":[12,32,56,67,70,79,145,153,159],"surge":[13,93],"energy":[14,76,94,136],"through":[15],"capacitive":[16],"charging,":[17],"which":[18,65],"often":[19],"causes":[20],"significant":[21],"voltage":[22,98],"overshoot":[23,99],"up":[24],"to":[25,112,126,143],"their":[26,167],"catastrophic":[27],"limit.":[28],"This":[29],"work":[30],"explores":[31],"parametric":[33,104,146],"shift":[34,147],"recovery":[36,58,123],"of":[37,69,138,155,162],"a":[38,86,97,107,134],"commercial":[39],"Schottky-type,":[40],"p-gate":[41,163],"HEMT":[43],"under":[44,59],"repetitive,":[45],"overvoltage":[46,160],"switching":[47,89],"stresses":[48],"near":[49,166],"its":[50],"dynamic":[51,168],"breakdown":[52,169],"voltage.":[53,170],"In":[54],"particular,":[55],"device":[57,122],"various":[60],"temperatures":[61],"is":[62],"comprehensively":[63],"studied,":[64],"allows":[66],"identification":[68],"de-trapping":[71],"dynamics":[72,157],"dominant":[74],"trap":[75],"levels":[77],"for":[78],"first":[80],"time.":[81],"Devices":[82],"were":[83,110],"stressed":[84],"in":[85,118],"clamped":[87],"inductive":[88],"circuit":[90],"with":[91,96],"1-million":[92],"cycles":[95],"reaching":[100],"1300":[101],"V.":[102],"The":[103,121],"shifts":[105],"showed":[106],"saturation":[108],"found":[111,125],"be":[113,127],"caused":[114],"by":[115,129],"holes":[116],"generated":[117],"impact":[119],"ionization.":[120],"was":[124,141],"accelerated":[128],"elevated":[130],"ambient":[131],"temperatures,":[132],"hole-trap":[135],"level":[137],"0.52":[139],"eV":[140],"identified":[142],"dominate":[144],"recovery.":[149],"These":[150],"results":[151],"suggest":[152],"significance":[154],"hole":[156],"on":[158],"robustness":[161],"HEMTs":[165]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}